Search

A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001), and Co(0001) films in the presence of an external electric field. The effect originates from spin-dependent screening of the electric field which leads to notable changes in the surface magnetization and the surface magnetocrystalline anisotropy. These results are of considerable interest in the area of electrically controlled magnetism and magnetoelectric phenomena.

Based on first-principles calculations, we demonstrate the impact of the electric polarization on electron transport in ferroelectric tunnel junctions (FTJs). Using a Pt/BaTiO3/Pt FTJ as a model system, we show that the polarization of the BaTiO3 barrier leads to a substantial drop in the tunneling conductance due to changes in the electronic structure driven by ferroelectric displacements. We find a sizable change in the transmission probability across the Pt/BaTiO3 interface with polarization reversal, a signature of the electroresistance effect. These results reveal exciting prospects that FTJs offer as resistive switches in nanoscale electronic devices.

We perform ab initio calculations of the electronic structure and conductance of atomic-size Ni nanowires with domain walls only a few atomic lattice constants wide. We show that the hybridization between noncollinear spin states leads to a reduction of the magnetic moments in the domain wall resulting in the enhancement of the domain wall resistance. Experimental studies of the magnetic moment softening may be feasible with modern techniques such as scanning tunneling spectroscopy.

An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric-ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric-ferromagnet interface that alters the interface magnetization when the electric polarization reverses. Using Fe/BaTiO3 multilayers as a representative model, we show a sizable difference in magnetic moments of Fe and Ti atoms at the two interfaces dissimilar by the orientation of the local electric dipole moments. The predicted magnetoelectric effect opens a new direction to control magnetic properties of thin-film layered structures by electric fields.

We perform an ab initio study of spin-polarized tunneling in epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions with bcc Co(001) electrodes. We predict a large tunneling magnetoresistance in these junctions, originating from a mismatch in the majority- and minority-spin bands both in bulk bcc Co and at the Co/SrTiO(3)/Co interface. The intricate complex band structure of SrTiO(3) enables efficient tunneling of the minority d electrons which causes the spin polarization of the Co/SrTiO(3)/Co interface to be negative in agreement with experimental data. Our results indicate that epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions with bcc Co(001) electrodes are a viable alternative for device applications.

Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance-a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect of the spin-orbit interaction on the electronic band structure which leads to a change in the number of bands crossing the Fermi energy when the magnetization direction changes. We illustrate the significance of this phenomenon by performing ab initio calculations of the ballistic conductance in ferromagnetic Ni and Fe nanowires which display a sizable ballistic anisotropic magnetoresistance when magnetization changes direction from parallel to perpendicular to the wire axis.