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InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M[over ¯] high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradiction with other III–V materials. For the Bi termination, the study gives a consistent physical picture of the topological surface electronic structure of InBi(001) terminated by a Bi bilayer rather than a surface formed by splitting to a Bi monolayer termination. Theoretical calculations based on relativistic density functional theory and the one-step model of photoemission clarify the relationship between the InBi(001) surface termination and the topological surface states, supporting a predominant role of the Bi bilayer termination. Furthermore, a tight-binding model based on this Bi bilayer termination with only Bi–Bi hopping terms, and no Bi–In interaction, gives a deeper insight into the spin texture.

We combined a spin resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin, time, and angle resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe_{2}, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin resolved one-step photoemission calculations provide insight into the spin polarization of electrons above the Fermi level in the region where Weyl points of WTe_{2} are expected. We observe a spin accumulation above the Weyl points region, which is consistent with a spin-selective bottleneck effect due to the presence of spin-polarized conelike electronic structure. Our results support the feasibility of STARPES with HHG, which despite being experimentally challenging provides a unique way to study spin dynamics in photoemission.