1. Temperature-Dependent Magnetotransport around v = 1/2 in ZnO Heterostructures.
- Author
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Maryenko, D., Falson, J., Kozuka, Y., Tsukazaki, A., Onoda, M., Aoki, H., and Kawasaki, M.
- Subjects
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QUANTUM Hall effect , *TEMPERATURE effect , *TRANSPORT theory , *ZINC oxide , *HETEROSTRUCTURES , *EFFECTIVE mass (Physics) , *BAND gaps - Abstract
The sequence of prominent fractional quantum Hall states up to v = 5/11 around v =1/2 in a high-mobility two-dimensional electron system confined at oxide heterointerface (ZnO) is analyzed in terms of the composite fermion model. The temperature dependence of Rxx oscillations around v = 1/2 yields an estimation of the composite fermion effective mass, which increases linearly with the magnetic field. This mass is of similar value to an enhanced electron effective mass, which in itself arises from strong electron interaction. The energy gaps of fractional states and the temperature dependence of Rxx at v = 1/2 point to large residual interactions between composite fermions. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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