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Your search keyword '"Ringer, Simon P."' showing total 7 results
Start Over Author "Ringer, Simon P." Publisher american physical society
7 results on '"Ringer, Simon P."'

1. Hydrogen adsorption capacity of adatoms on double carbon vacancies of graphene: A trend study from first principles

Author

Fair, K.M., Cui, X. Y., Li, Li (Lily), Shieh, C.C., Zheng, Rongkun, Liu, Zongwen, Delley, B., Ford, M J, Ringer, Simon P., Stampfl, Catherine M, Fair, K.M., Cui, X. Y., Li, Li (Lily), Shieh, C.C., Zheng, Rongkun, Liu, Zongwen, Delley, B., Ford, M J, Ringer, Simon P., and Stampfl, Catherine M

Abstract

Structural stability and hydrogen adsorption capacity are two key quantities in evaluating the potential of metal-adatom decorated graphene for hydrogen storage and related devices. We have carried out extensive density functional theory calculations for

Published
2014

2. Direct Observation of Local Potassium Variation and Its Correlation to Electronic Inhomogeneity in (Ba 1 - x K x )Fe 2 As 2 Pnictide

Author

Yeoh, Wai Kong, Gault, B., Cui, X. Y., Zhu, C., Moody, M.P., Li, Li (Lily), Zheng, Rongkun, Wang, Xiao Lin, Li, W.X., Dou, S X, Sun, G.L., Lin, C.T., Ringer, Simon P., Yeoh, Wai Kong, Gault, B., Cui, X. Y., Zhu, C., Moody, M.P., Li, Li (Lily), Zheng, Rongkun, Wang, Xiao Lin, Li, W.X., Dou, S X, Sun, G.L., Lin, C.T., and Ringer, Simon P.

Abstract

Local fluctuations in the distribution of dopant atoms are thought to cause the nanoscale electronic disorder or phase separation in pnictide superconductors. Atom probe tomography has enabled the first direct observations of dopant species clustering in

Published
2011

3. Magic numbers of nanoholes in graphene: Tunable magnetism and semiconductivity

Author

Cui, X. Y., Zheng, Rongkun, Liu, Zongwen, Li, Li (Lily), Delley, B., Stampfl, Catherine M, Ringer, Simon P., Cui, X. Y., Zheng, Rongkun, Liu, Zongwen, Li, Li (Lily), Delley, B., Stampfl, Catherine M, and Ringer, Simon P.

Abstract

Patterned vacancy clusters (or nanoholes) can modify the electronic structure of graphene, and thereby generate entirely new functionalities. Knowledge of the relative stability of various nanoholes and associated properties is essential for the rational

Published
2011

4. Manipulation of Nanoscale Domain Switching Using an Electron Beam with Omnidirectional Electric Field Distribution.

Author

Zibin Chen, Xiaolin Wang, Ringer, Simon P., and Xiaozhou Liao

Subjects
*ELECTRON beams, *FERROELECTRIC domains, *ELECTRIC fields
Abstract

Reversible ferroelectric domain (FD) manipulation with a high spatial resolution is critical for memory storage devices based on thin film ferroelectric materials. FD can be manipulated using techniques that apply heat, mechanical stress, or electric bias. However, these techniques have some drawbacks. Here we propose to use an electron beam with an omnidirectional electric field as a tool for erasable stable ferroelectric nanodomain manipulation. Our results suggest that local accumulation of charges contributes to the local electric field that determines domain configurations. [ABSTRACT FROM AUTHOR]

Published
2016
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5. Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

Author

Zibin Chen, Liang Hong, Feifei Wang, Ringer, Simon P., Long-Qing Chen, Haosu Luo, and Xiaozhou Liao

Subjects
*FERROELASTIC transitions, *NANOSTRUCTURED materials, *ELECTRICAL conductivity transitions
Abstract

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior. [ABSTRACT FROM AUTHOR]

Published
2017
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6. Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

Author

Chen Z, Hong L, Wang F, Ringer SP, Chen LQ, Luo H, and Liao X

Abstract

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

Published
2017
Full Text
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7. Manipulation of Nanoscale Domain Switching Using an Electron Beam with Omnidirectional Electric Field Distribution.

Author

Chen Z, Wang X, Ringer SP, and Liao X

Abstract

Reversible ferroelectric domain (FD) manipulation with a high spatial resolution is critical for memory storage devices based on thin film ferroelectric materials. FD can be manipulated using techniques that apply heat, mechanical stress, or electric bias. However, these techniques have some drawbacks. Here we propose to use an electron beam with an omnidirectional electric field as a tool for erasable stable ferroelectric nanodomain manipulation. Our results suggest that local accumulation of charges contributes to the local electric field that determines domain configurations.

Published
2016
Full Text
View/download PDF

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