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We calculate the free energies of unstable stacking fault (USF) configurations on the glide and shuffle slip planes in silicon as a function of temperature, using the recently developed environment-dependent interatomic potential (EDIP). We employ the molecular dynamics (MD) adiabatic switching method with appropriate periodic boundary conditions and restrictions to atomic motion that guarantee stability and include volume relaxation of the USF configurations perpendicular to the slip plane. Our MD results using the EDIP model agree fairly well with earlier first-principles estimates for the transition from shuffle to glide plane dominance as a function of temperature. We use these results to make contact to brittle-ductile transition models. [S0163-1829(98)06043-3]., Accepted Manuscript

The mass transport properties along dislocation cores in hcp ^{4}He are revisited by considering two types of edge dislocations as well as a screw dislocation, using a fully correlated quantum simulation approach. Specifically, we employ the zero-temperature path-integral ground state (PIGS) method together with ergodic sampling of the permutation space to investigate the fundamental dislocation core structures and their off-diagonal long-range order properties. It is found that the Bose-Einstein condensate fraction of such defective ^{4}He systems is practically null (≤10^{-6}), just as in the bulk defect-free crystal. These results provide compelling evidence for the absence of intrinsic superfluidity in dislocation cores in hcp ^{4}He and challenge the superfluid dislocation-network interpretation of the mass-flux-experiment observations, calling for further experimental investigation.

Using molecular dynamics simulations and nonequilibrium thermodynamic-integration techniques we compute the Helmholtz free energies of the body-centered-cubic (bcc), face-centered-cubic (fcc), hexagonal close-packed, and fluid phases of the Uhlenbeck-Ford model (UFM) and use the results to construct its phase diagram. The pair interaction associated with the UFM is characterized by an ultrasoft, purely repulsive pair potential that diverges logarithmically at the origin. We find that the bcc and fcc are the only thermodynamically stable crystalline phases in the phase diagram. Furthermore, we report the existence of two reentrant transition sequences as a function of the number density, one featuring a fluid-bcc-fluid succession and another displaying a bcc-fcc-bcc sequence near the triple point. We find strong resemblances to the phase behavior of other soft, purely repulsive systems such as the Gaussian-core model (GCM), inverse-power-law, and Yukawa potentials. In particular, we find that the fcc-bcc-fluid triple point and the phase boundaries in its vicinity are in good agreement with the prediction supplied by a recently proposed corresponding-states principle [J. Chem. Phys. 134, 241101 (2011)JCPSA60021-960610.1063/1.3605659; Europhys. Lett. 100, 66004 (2012)EULEEJ0295-507510.1209/0295-5075/100/66004]. The particularly strong resemblance between the behavior of the UFM and GCM models are also discussed.

Using path-integral Monte Carlo simulations, we assess the core structure and mobility of the screw and edge basal-plane dislocations in hcp ^{4}He. Our findings provide key insights into recent interpretations of giant plasticity and mass flow junction experiments. First, both dislocations are dissociated into nonsuperfluid Shockley partial dislocations separated by ribbons of stacking fault, suggesting that they are unlikely to act as one-dimensional channels that may display Lüttinger-liquid-like behavior. Second, the centroid positions of the partial cores are found to fluctuate substantially, even in the absence of applied shear stresses. This implies that the lattice resistance to motion of the partial dislocations is negligible, consistent with the recent experimental observations of giant plasticity. Further results indicate that both the structure of the partial cores and the zero-point fluctuations play a role in this extreme mobility.

Using path-integral Monte Carlo simulations, we compute the ideal shear strength (ISS) on the basal plane of hcp (4)He. The failure mode upon reaching the ISS limit is characterized by the homogeneous nucleation of a stacking fault and it is found to be anisotropic, consistent with Schmid's law of resolved shear stress. Comparing the ISS of hcp (4)He to a large set of classical crystals shows that it closely fits the approximately universal modified Frenkel model of ideal strength. In addition to giving quantitative stress levels for the homogeneous nucleation of extended defects in hcp (4)He, our findings lend support to assumptions in the literature that inherently classical models remain useful for the description of mechanical behavior in quantum crystals.

We investigate the structure and mobility of dislocations in hcp 4He crystals. In addition to fully characterizing the five elastic constants of this system, we obtain direct insight into dislocation core structures on the basal plane, which demonstrates a tendency toward dissociation into partial dislocations. Moreover, our results suggest that intrinsic lattice resistance is an essential factor in the mobility of these dislocations. This insight sheds new light on the possible correlation between dislocation mobility and the observed macroscopic behavior of crystalline 4He.

We present a first-principles study of the molecular vacancy and three distinct molecular interstitial structures in ice Ih. The results indicate that, due to its bonding to the surrounding hydrogen-bond network, the bond-center (Bc) configuration is the favored molecular interstitial in ice Ih. A comparison between the vacancy and the Bc interstitial suggests that the former is the predominant molecular point defect for T approximately < 200K although a crossover scenario in which the latter becomes favored below the melting point is conceivable.

We present a first-principles study of the structure and energetics of Bjerrum defects in ice Ih and compare the results to experimental electrical conductivity data. While the DFT result for the activation energy is in good agreement with experiment, we find that its two components have quite different values. Aside from providing new insight into the fundamental parameters of the microscopic electrical theory of ice, our results suggest the activity of traps in doped ice in the temperature regime typically assumed to be controlled by the free migration of L defects.

Direct atomistic simulations of dislocation multiplication in fcc aluminum reveal an unexpected mechanism, in which a Frank-Read source emits dislocations with Burgers vectors different from that of the source itself. The mechanism is traced to a spontaneous nucleation of partial dislocation loops within the stacking fault. Understanding and a quantitative description of this unusual process are achieved through the development of a continuum model for dislocation nucleation based on the coarse-grained dislocation dynamics approach and a minimal amount of atomistic input.

We present an importance sampling technique for enhancing the efficiency of sampling rare transition events in Markov processes. Our approach is based on the design of an importance function by which the absolute probability of sampling a successful transition event is significantly enhanced, while preserving the relative probabilities among different successful transition paths. The method features an iterative stochastic algorithm for determining the optimal importance function. Given that the probability of sampling a successful transition event is enhanced by a known amount, transition rates can be readily computed. The method is illustrated in one- and two-dimensional systems.

We propose a time-dependent boundary condition coupling an atomistic simulation system to linear surroundings such that reflection of elastic waves across the boundary is minimized. Interdomain interactions expressed in terms of memory kernel functions within linear-response theory are treated in a natural dynamical manner, albeit numerically. The approach is shown to give significantly reduced phonon reflections at the domain boundaries relative to existing coupling methods. In addition, we demonstrate that the framework is also effective in the context of static relaxation of displacement fields associated with embedded inhomogeneities.

Competition between the two alternative positions (shuffle and glide 111 plane subsets) for the core of a 30 degrees partial dislocation in Si is examined. Using a combination of ab initio total energy calculations with finite temperature free-energy calculations based on an interatomic potential, we obtained free energies for the relevant vacancy-type core defects. Generally, the free energy of vacancy formation in the core of a 30 degrees glide partial dislocation is considerably lower (by more than 1 eV) than in the bulk. However, even at high temperatures, the predicted thermal concentration of the shuffle segments comprised of a row of vacancies in the core is low, placing the 30 degrees partial dislocation in the glide subset position.