1. Diameter-controlled Czochralski growth of silicon crystals
- Author
-
Zhang, H., Zheng, L.L., Prasad, V., and Larson, D.J., Jr.
- Subjects
Heat -- Conduction ,Crystals -- Growth ,Silicon crystals -- Models ,Radiation -- Models ,Engineering and manufacturing industries ,Science and technology - Abstract
The mechanism of convection in the melt, conduction in the crystal and radiation from the melt free surface and crystal was investigated using a thermal-capillary dynamic numerical model for Czochralski growth of silicon single crystal. It was found that the shapes of the crystal/melt interface, free surface and moving crystal are regulated by the balance of energy and stresses. Results also showed that the diameter of the crystal can remain constant or vary with time based on the approaches used to govern the growth process.
- Published
- 1998