23 results on '"Diebold, Alain"'
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2. Nondestructive characterization of nanoscale subsurface features fabricated by selective etching of multilayered nanowire test structures using Mueller matrix spectroscopic ellipsometry based scatterometry
3. Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
4. Surface oxidation of the topological insulator Bi2Se3
5. Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001)
6. Engineering crystallinity of atomic layer deposited gate stacks containing ultrathin HfO2and a Ti-based metal gate: Effects of postmetal gate anneal and integration schemes
7. Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1−xGex/Si fin structures using x-ray reciprocal space maps
8. Nanoscale characterization and metrology
9. Cross characterization of ultrathin interlayers in HfO2 high-k stacks by angle resolved x-ray photoelectron spectroscopy, medium energy ion scattering, and grazing incidence extreme ultraviolet reflectometry
10. Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)–Si by spectroscopic ellipsometry, Auger spectroscopy, and STM
11. Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry
12. Application of x-ray metrology in the characterization of metal gate thin films
13. Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition
14. X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics
15. Erratum: “Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with one micron thick oxide layers” [J. Vac. Sci. Technol. A 16, 1825 (1998)]
16. Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with 1 μm thick oxide layers
17. Comparison of submicron particle analysis by Auger electron spectroscopy, time‐of‐flight secondary ion mass spectrometry, and secondary electron microscopy with energy dispersive x‐ray spectroscopy
18. Calibration issues for total reflection x‐ray fluorescence analysis of surface metallic contamination on silicon
19. Materials and failure analysis methods and systems used in the development and manufacture of silicon integrated circuits
20. Evaluation of surface analysis methods for characterization of trace metal surface contaminants found in silicon integrated circuit manufacturing
21. Stress variation with temperature/time and its correlation to film structure and deposition parameters
22. Use of Raman spectroscopy to characterize strain in III–V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy
23. Erratum: Use of Raman spectroscopy to characterize strain III–V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy [J. Vac. Sci. Technol. B 7, 365 (1989)]
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