1. Molecular-beam epitaxy and deposition of high-Tc superconductors
- Author
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E. S. Hellman, N. Missert, S.‐L. Weng, T. H. Geballe, C. Webb, James S. Harris, Kookrin Char, Darrell G. Schlom, Aharon Kapitulnik, James N. Eckstein, and M. R. Beasley
- Subjects
Materials science ,Reflection high-energy electron diffraction ,Annealing (metallurgy) ,Inorganic chemistry ,General Engineering ,Analytical chemistry ,chemistry.chemical_element ,Epitaxy ,Copper ,Amorphous solid ,chemistry ,Electron diffraction ,Crystallite ,Molecular beam epitaxy - Abstract
We have grown thin, highly oriented, polycrystalline DyBa2Cu3O7−x films using molecular‐beam epitaxy (MBE) techniques that show the onset of superconductivity at temperatures above 90 K and complete transitions at temperatures as high as 87 K. These films have critical current densities as high as 5×105 A/cm2 at 4.2 K. Films were grown in a modified Varian 360 MBE machine using effusion sources containing the metal constituents, along with a gaseous oxygen source. The early stages of deposition were monitored with reflection high‐energy electron diffraction (RHEED). The best films were obtained on SrTiO3 substrates at substrate temperatures of 600–750 °C. At these temperatures, the initial stage of growth is dominated by epitaxy of copper islands. At lower temperatures, the growth is amorphous, while at higher temperatures, copper may not be incorporated into the film. Copper incorporation is also affected by oxygen flux. In all cases, the films are semiconducting or insulating as grown, and become superc...
- Published
- 1988
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