196 results on '"Pearton, S. J."'
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2. Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
3. NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV
4. Transport and trap states in proton irradiated ultra-thick κ-Ga2O3
5. 7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013
6. Radiation damage in GaN/AlGaN and SiC electronic and photonic devices
7. Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3
8. On the possible nature of deep centers in Ga2O3
9. Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3
10. Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C
11. Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers
12. Growth of (SmxGa1−x)2O3 by molecular beam epitaxy
13. Ga+-focused ion beam damage in n-type Ga2O3
14. Thermal stability of band offsets of NiO/GaN
15. Growth and characterization of (Sc2O3)x(Ga2O3)1−x by molecular beam epitaxy
16. Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers
17. Diffusion of implanted Ge and Sn in β-Ga2O3
18. Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
19. Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers
20. 10 MeV proton damage in β-Ga2O3 Schottky rectifiers
21. Annealing of dry etch damage in metallized and bare (-201) Ga2O3
22. Current relaxation analysis in AlGaN/GaN high electron mobility transistors
23. Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates
24. Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors
25. Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions
26. Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation
27. Electrical properties and radiation detector performance of free-standing bulk n-GaN
28. Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors
29. Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors
30. Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
31. Large-area suspended graphene on GaN nanopillars
32. Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors
33. Deep traps and thermal measurements on AlGaN/GaN on Si transistors
34. Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates
35. Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors
36. Deep electron and hole traps in neutron transmutation doped n-GaN
37. Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
38. Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors
39. Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
40. Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas
41. Effects of channel dimensions on performance of a-InGaZnO4 thin-film transistors
42. Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors
43. Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures
44. Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors
45. a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers
46. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
47. Proton irradiation effects on AlN/GaN high electron mobility transistors
48. GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide
49. Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates
50. Neutron transmutation doping effects in GaN
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