1. Improved etch resistance of ZEP 520A in reactive ion etching through heat and ultraviolet light treatment
- Author
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David A. Czaplewski, Joel R. Wendt, David Robert Tallant, Bertha Montoya, and Gary A. Patrizi
- Subjects
Materials science ,Plasma etching ,business.industry ,technology, industry, and agriculture ,Analytical chemistry ,Infrared spectroscopy ,Ultraviolet light treatment ,Condensed Matter Physics ,Resist ,Etching (microfabrication) ,Optoelectronics ,sense organs ,Electrical and Electronic Engineering ,Reactive-ion etching ,business ,Electron beam resist ,Electron-beam lithography - Abstract
The authors have developed a treatment process to improve the etch resistance of an electron beam lithography resist (ZEP 520A) to allow direct pattern transfer from the resist into a hard mask using plasma etching without a metal lift-off process. When heated to 90 °C and exposed for 17 min to a dose of approximately 8 mW/cm2 at 248 nm, changes occur in the resist that are observable using infrared spectroscopy. These changes increase the etch resistance of ZEP 520A to a CF4/O2 plasma. This article will document the observed changes in the improved etch resistance of the ZEP 520A electron beam resist.
- Published
- 2009
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