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We examine the effect of van der Waals (vdW) interactions between atomic force microscope tips and individual carbon nanotubes (CNTs) supported on SiO2. Molecular dynamics (MD) simulations reveal how CNTs deform during atomic force microscopy (AFM) measurement, irrespective of the AFM tip material. The apparent height of a single- (double-) walled CNT can be used to estimate its diameter up to ∼2 nm (∼3 nm), but for larger diameters the CNT cross-section is no longer circular. Our simulations were compared against CNT dimensions obtained from AFM measurements and resonant Raman spectroscopy, with good agreement for the smaller CNT diameters. In general, AFM measurements of large-diameter CNTs must be interpreted with care, but the reliability of the approach is improved if knowledge of the number of CNT walls is available, or if additional verification (e.g., by optical techniques) can be obtained. Open image in new window

We study high-field electrical breakdown and heat dissipation from carbon nanotube (CNT) devices on ${\text{SiO}}_{2}$ substrates. The thermal ``footprint'' of a CNT caused by van der Waals interactions with the substrate is revealed through molecular dynamics simulations. Experiments and modeling find the CNT-substrate thermal coupling scales proportionally with CNT diameter and inversely with ${\text{SiO}}_{2}$ surface roughness $(\ensuremath{\sim}d/\ensuremath{\Delta})$. Comparison of diffuse mismatch modeling and data reveals the upper limit of thermal coupling $\ensuremath{\sim}0.4\text{ }\text{W}\text{ }{\text{K}}^{\ensuremath{-}1}\text{ }{\text{m}}^{\ensuremath{-}1}$ per unit CNT length at room temperature, ($130\text{ }\text{MW}\text{ }{\text{K}}^{\ensuremath{-}1}\text{ }{\text{m}}^{\ensuremath{-}2}$ per unit area), and $\ensuremath{\sim}0.7\text{ }\text{W}\text{ }{\text{K}}^{\ensuremath{-}1}\text{ }{\text{m}}^{\ensuremath{-}1}$ at $600\text{ }\ifmmode^\circ\else\textdegree\fi{}\text{C}$ for the largest diameter ($\ensuremath{\sim}$3.2 nm) CNTs. We also find semiconducting CNTs can break down prematurely and display more variability due to dynamic shifts in threshold voltage, which metallic CNTs are immune to; this poses a fundamental challenge for selective electrical breakdowns in CNT electronics.