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This paper deals with a nonlinear filtering problem in which a multi-dimensional signal process is additively affected by a process $\nu$ whose components have paths of bounded variation. The presence of the process $\nu$ prevents from directly applying classical results and novel estimates need to be derived. By making use of the so-called reference probability measure approach, we derive the Zakai equation satisfied by the unnormalized filtering process, and then we deduce the corresponding Kushner-Stratonovich equation. Under the condition that the jump times of the process $\nu$ do not accumulate over the considered time horizon, we show that the unnormalized filtering process is the unique solution to the Zakai equation, in the class of measure-valued processes having a square-integrable density. Our analysis paves the way to the study of stochastic control problems where a decision maker can exert singular controls in order to adjust the dynamics of an unobservable Itô-process., AMS 2020: 93E11, 60H15; 60J25, 60J76

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.

In this paper, we study an irreversible investment problem under Knightian uncertainty. In a general framework, in which Knightian uncertainty is modeled through a set of multiple priors, we prove existence and uniqueness of the optimal investment plan, and derive necessary and sufficient conditions for optimality. This allows us to construct the optimal policy in terms of the solution to a stochastic backward equation under the worst- case scenario. In a time-homogeneous setting { where risk is driven by a geometric Brownian motion and Knightian uncertainty is realized through a so-called "\$\kappa$ --ignorance" - we are able to provide the explicit form of the optimal irreversible investment plan., MSC2010 subject classification: 93E20, 91B38, 65C30

We solve an infinite time-horizon bounded-variation stochastic control problem with regime switching between $N$ states. This is motivated by the problem of a government that wants to control the country's debt-to-GDP (gross domestic product) ratio. In our formulation, the debt-to-GDP ratio evolves stochastically in continuous time, and its drift -- given by the interest rate on government debt, net of the growth rate of GDP -- is affected by an exogenous macroeconomic risk process modelled by a continuous-time Markov chain with $N$ states. The government can act on the public debt by increasing or decreasing its level, and it aims at minimising a net expected regime-dependent cost functional. Without relying on a guess-and-verify approach, but performing a direct probabilistic study, we show that it is optimal to keep the debt-to-GDP ratio in an interval, whose boundaries depend on the states of the risk process. These boundaries are given through a zero-sum optimal stopping game with regime switching with $N$ states and are characterised through a system of nonlinear algebraic equations with constraints. To the best of our knowledge, such a result appears here for the first time. Finally, we put in practice our methodology in a case study of a Markov chain with $N=2$ states; we provide a thorough analysis and we complement our theoretical results by a detailed numerical study on the sensitivity of the optimal debt ratio management policy with respect to the problem's parameters., Comment: A previous version of this paper was circulating under the title "Optimal Management of Debt-to-GDP Ratio with Regime-Switching Interest Rate". In the new version we have improved exposition, generalized the setting and some of the results, and reorganized the structure of the paper. 27 pages, 3 figures. To appear on SIAM Journal on Control and Optimization

We consider a class of N-player stochastic games of multi-dimensional singular control, in which each player faces a minimization problem of monotone-follower type with submodular costs. We call these games "monotone-follower games". In a not necessarily Markovian setting, we establish the existence of Nash equilibria. Moreover, we introduce a sequence of approximating games by restricting, for each natural number n, the players' admissible strategies to the set of Lipschitz processes with Lipschitz constant bounded by n. We prove that, for each n, there exists a Nash equilibrium of the approximating game and that the sequence of Nash equilibria converges, in the Meyer-Zheng sense, to a weak (distributional) Nash equilibrium of the original game of singular control. As a byproduct, such a convergence also provides approximation results of the equilibrium values across the two classes of games. We finally show how our findings can be employed to prove existence of open-loop Nash equilibria in an N-player stochastic differential game with singular controls, and we propose an algorithm to determine a Nash equilibrium for the monotone-follower game., Comment: 26 pages. Reduced the lenght and reorganized the exposition and some proofs

We report on the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor extracted from the current through the quantum dot as a probe for the donor ionization state. We employ a silicon n-metal-oxide-semiconductor field-effect transistor (MOSFET) with two side gates at a single metallization level to control both the device conductance and the donor charge. The elastic nature of the process is demonstrated by temperature and magnetic field independent tunneling times. The Fano factor approaches 1/2 revealing that the process is sub-poissonian. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4721433]

We study a stochastic, continuous time model on a finite horizon for a firm that produces a single good. We model the production capacity as an Ito diffusion controlled by a nondecreasing process representing the cumulative investment. The firm aims to maximize its expected total net profit by choosing the optimal investment process. That is a singular stochastic control problem. We derive some first order conditions for optimality and we characterize the optimal solution in terms of the base capacity process, i.e. the unique solution of a representation problem in the spirit of Bank and El Karoui (2004). We show that the base capacity is deterministic and it is identified with the free boundary of the associated optimal stopping problem, when the coefficients of the controlled diffusion are deterministic functions of time. This is a novelty in the literature on finite horizon singular stochastic control problems. As a subproduct this result allows us to obtain an integral equation for the free boundary, which we explicitly solve in the infinite horizon case for a Cobb-Douglas production function and constant coefficients in the controlled capacity process., Comment: 23 pages

We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and $^{3}$He temperatures, we find that the characteristic time ratio changes by 3 orders of magnitude when the field increases from 0 to 12 T. Similar behaviour is found when the static field is either in-plane or perpendicular to the two dimensional electron gas. The experimental data can be explained by considering a model which includes the triplet state of the trapping center and the polarization of the channel electron gas., Comment: 3.3 pages, 3 figures