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We propose a novel method for controlling the high-harmonic generation (HHG) with a high dynamic range in single-layer graphene. We find that, by utilizing shear strain, a significant enhancement or quenching of HHG is possible over a range of several orders of magnitude. This feature is made possible by the resonance mechanism at a van Hove singularity. Therein, the shear strain controls the configurations of the two Dirac cones, resulting in changes in the energy and dipole moment at the saddle point of the band dispersion. Our findings provide a way for modulating or switching light by using a nano-optomechanical device composed of single-layer graphene., Comment: 20 pages, 8 figures

The ideal solar cell conversion efficiency limit known as the Shockley-Queisser (SQ) limit, which is based on a detailed balance between absorption and radiation, has long been a target for solar cell researchers. While the theory for this limit uses several assumptions, the requirements in real devices have not been discussed fully. Given the current situation in which research-level cell efficiencies are approaching the SQ limit, a quantitative argument with regard to these requirements is worthwhile in terms of understanding of the remaining loss mechanisms in current devices and the device characteristics of solar cells that are operating outside the detailed balance conditions. Here we examine two basic assumptions: (1) that the photo-generated carriers lose their kinetic energy via phonon emission in a moment (fast thermalization), and (2) that the photo-generated carriers are extracted into carrier reservoirs in a moment (fast extraction). Using a model that accounts for the carrier relaxation and extraction dynamics, we reformulate the nonequilibrium theory for solar cells in a manner that covers both the equilibrium and nonequilibrium regimes. Using a simple planar solar cell as an example, we address the parameter regime in terms of the carrier extraction time and then consider where the conventional SQ theory applies and what could happen outside the applicable range., Comment: 25 pages, 15 figures

By combining a tilted-pulse-intensity-front scheme using a LiNbO3 crystal and a chirped-pulse-beating method, we generated a narrowband intense terahertz (THz) pulse, which had a maximum electric field of more than 10 kV/cm at around 2 THz, a bandwidth of about 50 GHz,and frequency tunability from 0.5 to 2 THz. By performing THz-pump and near-infrared-probe experiments on GaAs quantum wells, we observed that the resonant excitation of the intraexcitonic 1s-2p transition induces a clear and large Autler-Townes splitting. Our time-resolved measurements show that the splitting energy observed in the rising edge region of electric field is larger than in the constant region. This result implies that the splitting energy depends on the time-averaged THz field over the excitonic dephasing time rather than that at the instant of the exciton creation by a probe pulse.

We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the intensity of the photoluminescence spectra of these TiO2 samples, both of which correlate with the number of oxygen vacancies, are shown to depend strongly on the growth rate. A quantitative model is used to explain the carrier density changes., Comment: 13 pages 3 figures

We measured absorption spectra of T-shaped quantum wires at room temperature using waveguide-transmission spectroscopy. Strong and narrow room-temperature one-dimensional-exciton absorption peak was observed, which shows peak modal absorption coefficient of 160 cm$^{-1}$ per 20 wires with $\Gamma$-factor of $4.3\times10^{-3}$, width of 7.2 meV, and strong polarization anisotropy., Comment: 3pages, 3figure, 1table

We measured resonant Raman scattering by intersubband electronic excitations in GaAs/AlAs single quantum wells (QWs) with well widths ranging from 8.5 to 18 nm. In narrow (less than 10 nm) QWs with sufficiently high electron concentrations, only single-particle excitations (SPEs) were observed in intersubband Raman scattering, which was confirmed by the well-width dependence of Raman spectra. We found characteristic variations in Raman shift and line shape for SPEs with incident photon energy in the narrow QWs., Comment: 5 pages including 4 figures

We measured polarization-dependent photoluminescence-excitation spectra of highly uniform T-shaped quantum wires at 5 K. We attribute one peak to the 1D-exciton ground state and the continuous absorption band to 1D continuum states. These had similar polarization-dependences. We also observed some other peaks above the 1D-exciton ground state and attribute them to exciton states consisting of excited hole subbands. These results show good agreement with a model calculation of a single electron-hole pair in T-shaped geometry with exact diagonalizations of the Coulomb interaction.

We calculate the intersubband absorption linewidth in quantum wells (QWs) due to scattering by interface roughness, LO phonons, LA phonons, alloy disorder, and ionized impurities, and compare it with the transport energy broadening that corresponds to the transport relaxation time related to electron mobility. Numerical calculations for GaAs QWs clarify the different contributions of each individual scattering mechanism to absorption linewidth and transport broadening. Interface roughness scattering contributes about an order of magnitude more to linewidth than to transport broadening, because the contribution from the intrasubband scattering in the first excited subband is much larger than that in the ground subband. On the other hand, LO phonon scattering (at room temperature) and ionized impurity scattering contribute much less to linewidth than to transport broadening. LA phonon scattering makes comparable contributions to linewidth and transport broadening, and so does alloy disorder scattering. The combination of these contributions with significantly different characteristics makes the absolute values of linewidth and transport broadening very different, and leads to the apparent lack of correlation between them when a parameter, such as temperature or alloy composition, is changed. Our numerical calculations can quantitatively explain the previously reported experimental results., Comment: 17 pages, including 15 figures

High-quality T-shaped quantum wires are fabricated by cleaved-edge overgrowth with the molecular beam epitaxy on the interface improved by a growth-interrupt high-temperature anneal. Characterization by micro-photoluminescence (PL) and PL excitation (PLE) spectroscopy at 5 K reveals high uniformity, a sharp spectral width, and a small Stokes shift of one-dimensional (1-D) excitons. The PLE spectrum for 1-D states shows a large peak of ground-state excitons and a small absorption band ascribed to 1-D continuum states with an onset at 11 meV above the exciton peak., Comment: 4 pages, 4 figures, RevTeX