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The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by the presence of an in-plane magnetic field. In both cases the resistivity obeys Efros-Shklovskii variable range hopping $\rho(T) = \rho_0 \mbox{exp}[(T_{ES}/T)^{1/2}]$, with $T_{ES}$ and $1/\rho_0$ mapping onto each other if one applies a shift of the critical density $n_c$ reported earlier. With and withoug magnetic field, the parameters $T_{ES}$ and $1/\rho_0 = \sigma_0$ exhibit scaling consistent with critical behavior approaching a metal-insulator transition., Comment: 5 pages, 5 figures

We report measurements of the susceptibility in the temperature range from $3.5$ K to $6.0$ K of a series of Mn$_{12}$-ac and Mn$_{12}$-ac-MeOH samples in the shape of rectangular prisms of length $l_c$ and square cross-section of side $l_a$. The susceptibility obeys a Curie-Weiss Law, $\chi=C/(T-\theta)$, where $\theta$ varies systematically with sample aspect ratio. Using published demagnetization factors, we obtain $\theta$ for an infinitely long sample corresponding to intrinsic ordering temperatures $T_c \approx 0.85$ K and $\approx 0.74$ K for Mn$_{12}$-ac and Mn$_{12}$-ac-MeOH, respectively. The difference in $T_c$ for two materials that have nearly identical unit cell volumes and lattice constant ratios suggests that, in addition to dipolar interactions, there is a non-dipolar (exchange) contribution to the Weiss temperature that differs in the two materials because of the difference in ligand molecules., Comment: 4.5 pages

A theoretical model for the $Mn_{12}$ acetates is derived including a 'random field' effect arising from isomer effects in some families of host acetate materials. Estimates for the important energy scales are given. Phase boundaries are determined using a mean field approximation. Predictions for experiment are presented

Using micron-sized Hall sensor arrays to obtain time-resolved measurements of the local magnetization, we report a systematic study in the molecular magnet Mn$_{12}$-acetate of magnetic avalanches controllably triggered in different fixed external magnetic fields and for different values of the initial magnetization. The speeds of propagation of the spin-reversal fronts are in good overall agreement with the theory of magnetic deflagration of Garanin and Chudnovsky \cite{Garanin}., Comment: 8 pages, 7 figures; discussion expanded and revised

The longitudinal magnetic susceptibility of single crystals of the molecular magnet Mn$_{12}$-acetate obeys a Curie-Weiss law, indicating a transition to a ferromagnetic phase due to dipolar interactions. With increasing magnetic field applied transverse to the easy axis, the transition temperature decreases considerably more rapidly than predicted by mean field theory to a T=0 quantum critical point. Our results are consistent with an effective Hamiltonian for a random-field Ising ferromagnet in a transverse field, where the randomness is induced by an external field applied to Mn$_{12}$-acetate crystals that are known to have an intrinsic distribution of locally tilted magnetic easy axes., Comment: 4 pages, 4 figures

Crystals of the molecular magnet Mn12-acetate are known to contain a small fraction of low- symmetry (minor) species with a small anisotropy barrier against spin reversal. The lower barrier leads to faster magnetic relaxation and lower coercive field. We exploit the low coercive fields of the minor species to make a direct determination of the dipole field in Mn12-ac. We find that the dipolar field of a fully magnetized crystal is 51.5 \pm 8.5 mT, consistent with theoretical expectations., Comment: 3 pages, 3 figures

Using a wire heater to ignite magnetic avalanches in fixed magnetic field applied along the easy axis of single crystals of the molecular magnet Mn$_{12}$-acetate, we report fast local measurements of the temperature and time-resolved measurements of the local magnetization as a function of magnetic field. In addition to confirming maxima in the velocity of propagation, we find that avalanches trigger at a threshold temperature which exhibits pronounced minima at resonant magnetic fields, demonstrating that thermally assisted quantum tunneling plays an important role in the ignition as well as the propagation of magnetic avalanches in molecular magnets., Comment: 4 pages, 5 figures; modified claims

In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*\mu_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility $\chi^* \propto (g^*m^*)$ exhibits critical behavior of the form $\chi^* \propto (n - n_0)^{-\alpha}$. We examine the significance of the field scale $H_s$ derived from transport measurements, and show that this field signals the onset of full spin polarization only in the absence of disorder. Our results suggest that disorder becomes increasingly important as the electron density is reduced toward the transition., Comment: 4 pages, 3 figures

We report Hall sensor measurements of the magnetic relaxation of Mn$_{12}$-acetate as a function of magnetic field applied along the easy axis of magnetization for a series of closely-spaced temperatures between 0.24 K and 1.9 K. We map out a region in the $H-T$ plane where ground state tunneling is observed, a region where tunneling proceeds via thermally-assisted tunneling, and a crossover region where both participate in the relaxation. We observe the occasional absence of ground-state tunneling under conditions where one would expect it to be present, and suggest a resolution to the enigma., Comment: 5 pages including 4 figures. Minor revisions to clarify explanations

The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon MOSFET's is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large initial increase in resistivity with increasing field, followed by saturation to a value that is approximately constant above a characteristic magnetic field of about one Tesla. This is unexpected behavior in an insulator that exhibits Efros-Shklovskii variable-range hopping in zero field, and appears to be a general feature of very dilute electron systems., Comment: References added and updated. To be published in Phys. Rev. B

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form $\Delta\sigma(H_{||},T)\equiv\sigma(H_{||},T)-\sigma(0,T) = f(H_{||}/T)$ for magnetic fields $H_{||}$ applied parallel to the plane of the electron system. This sets a valuable constraint on theory and provides further evidence that the electron spin is central to the anomalous H=0 conducting phase in two dimensions., Comment: References updated and comparison with recent theory added

We note that data on Si/SiGe heterostructures, reported in the Comment of Ismail et al. (cond-mat/9707061) on our recent Letter (cond-mat/9608101), are insufficient to establish the claim for a transition to a metallic phase., Comment: 1 page, no figures

The non-linear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-insulator transition in this 2D system at B=0. Comparison with the temperature scaling yields separate determinations of the correlation length exponent, \nu=1.5, and the dynamical exponent, z=0.8, close to the theoretical value z=1., Comment: We have slightly changed discussion after a conversation with B. I. Shklovskii whom we thank very much