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The nanoscopic mass and charge distribution within the double layer at electrified interfaces plays a key role in electrochemical phenomena of huge technological relevance for energy production and conversion. However, in spite of its importance, the nanoscopic structure of the double layer and its response to an applied potential is still almost entirely unknown, even for Pt-water, the most fundamental electrochemical interface. Using a general ab initio methodology which advances previous models towards a dynamic and more realistic description of an electrode/electrolyte interface, we simulate for the first time the nanoscopic structure of the Pt-water double layer and its response to an applied potential, in realistic solution conditions. We reveal that the nanoscopic metal/surface structure and charging are not captured by traditional capacitor models, as the electrode polarization is associated with a charge oscillation within the double layer and a densification of the water layer in contact with the electrode, both of which strongly depend on the applied potential. Furthermore, we demonstrate that the interface dipole is not determined by the reorientation of the first water layer in contact with the electrode, but by its charging state in combination with its number density, while water reorientation becomes relevant only in the second water layer. Our findings will be essential to develop highly realistic models for the catalytic processes at the Pt-water interface.

WTe2, as a type-II Weyl semimetal, has 2D Fermi arcs on the (001) surface in the bulk and 1D helical edge states in its monolayer. These features have recently attracted wide attention in condensed matter physics. However, in the intermediate regime between the bulk and monolayer, the edge states have not been resolved owing to its closed band gap which makes the bulk states dominant. Here, we report the signatures of the edge superconductivity by superconducting quantum interference measurements in multilayer WTe2 Josephson junctions and we directly map the localized supercurrent. In thick WTe2 (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{upgreek} \usepackage{mathrsfs} \setlength{\oddsidemargin}{-69pt} \begin{document} }{}$\sim 60{\rm{\ nm}})$\end{document}, the supercurrent is uniformly distributed by bulk states with symmetric Josephson effect (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{upgreek} \usepackage{mathrsfs} \setlength{\oddsidemargin}{-69pt} \begin{document} }{}$| {I_c^ + ( B )} | {=} | {I_c^ - ( B )} |\ $\end{document}). In thin WTe2 (10 nm), however, the supercurrent becomes confined to the edge and its width reaches up to \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{upgreek} \usepackage{mathrsfs} \setlength{\oddsidemargin}{-69pt} \begin{document} }{}$1.4{\rm{\ \mu m\ }}$\end{document}and exhibits non-symmetric behavior \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{upgreek} \usepackage{mathrsfs} \setlength{\oddsidemargin}{-69pt} \begin{document} }{}$| {I_c^ + ( B )} | \ne | {I_c^ - ( B )} |$\end{document}. The ability to tune the edge domination by changing thickness and the edge superconductivity establishes WTe2 as a promising topological system with exotic quantum phases and a rich physics., We report the evidence of edge superconductivity in multilayer WTe2 Josephson junctions which remains rarely studied in type-II Weyl semimetal.

Determining thermal and physical quantities across a broad temperature domain, especially up to the ultra-high temperature region, is a formidable theoretical and experimental challenge. At the same time it is essential for understanding the performance of ultra-high temperature ceramic (UHTC) materials. Here we present the development of a machine-learning force field for ZrB2, one of the primary members of the UHTC family with a complex bonding structure. The force field exhibits chemistry accuracy for both energies and forces and can reproduce structural, elastic and phonon properties, including thermal expansion and thermal transport. A thorough comparison with available empirical potentials shows that our force field outperforms the competitors with the merits of high accuracy and great versatility. Most importantly, its effectiveness is extended from room temperature to the ultra-high temperature region (up to ∼ 2,500 K), where measurements are very difficult, costly and some time impossible. Our work demonstrates that machine-learning force fields (MLFF) can be used for simulations of materials in a harsh environment, where no experimental tools are available, but crucial for a number of engineering applications, such as in aerospace, aviation and nuclear.

The realisation of quantum computers based on molecular electronic spins requires the design of qubits with very long coherence times, T 2 . Dephasing can proceed over several different microscopic pathways, active at the same time and in different regimes. This makes the rationalisation of the dephasing process not straightforward. Here we present a computational methodology able to address spin decoherence processes for a general ensemble of spins. The method consists in the propagation of the unitary quantum spin dynamics on a reduced Hilbert space. Then we study the dependence of spin dephasing over the magnetic dilution for a crystal of Vanadyl-based molecular qubits. Our results show the importance of long-range electronic spin-spin interactions and their effect on the shape of the spin-echo signal.

The solution of complex many-body lattice models can often be found by defining an energy functional of the relevant density of the problem. For instance, in the case of the Hubbard model the spin-resolved site occupation is enough to describe the system total energy. Similarly to standard density functional theory, however, the exact functional is unknown and suitable approximations need to be formulated. By using a deep-learning neural network trained on exact-diagonalization results we demonstrate that one can construct an exact functional for the Hubbard model. In particular, we show that the neural network returns a ground-state energy numerically indistinguishable from that obtained by exact diagonalization and, most importantly, that the functional satisfies the two Hohenberg-Kohn theorems: for a given ground-state density it yields the external potential and it is fully variational in the site occupation., Comment: 5 pages, 3 figures

The ultrafast response to an optical pulse excitation of the spin-spin exchange interaction in transition metal anti-ferromagnets is studied within the framework of the time-dependent spin-density functional theory. We propose a formulation for the purely dynamical exchange interaction, which is non-local in space, and it is derived starting from {\it ab initio} arguments. Then, we investigate the effect of the laser pulse on the onset of the dynamical process. It is found that we can distinguish two types of excitations, both activated immediately after the action of the laser pulse. While the first one can be associated to a Stoner-like excitation and involves the transfer of spin from one site to another, the second one is related to the ultrafast modification of a Heisenberg-like exchange interaction and can trigger the formation of spin waves in the first few hundred femtoseconds of the time evolution.

Constrained density functional theory (CDFT) is used to evaluate the energy level alignment of a benzene molecule as it approaches a graphene sheet. Within CDFT the problem is conveniently mapped onto evaluating total energy differences between different charge-separated states, and it does not consist in determining a quasi-particle spectrum. We demonstrate that the simple local density approximation provides a good description of the level aligmnent along the entire binding curve, with excellent agreement to experiments at an infinite separation and to GW calculations close to the bonding distance. The method also allows us to explore the effects due to the presence of graphene structural defects and of multiple molecules. In general all our results can be reproduced by a classical image charge model taking into account the finite dielectric constant of graphene., Comment: 8 pages, 6 figures

Recent experimental work on Mn2RuxGa demonstrates its potential as a compensated ferrimagnetic half-metal (CFHM).Here we present a set of high-throughput ab initio density functional theory calculations and detailed experimental characterisation, that enable us to correctly describe the nominal Mn2RuxGa thin films, in particular with regard to site-disorder and defects. We then construct models that accurately capture all the key features of the Mn-Ru-Ga system, including magnetic compensation and the spin gap at the Fermi level. We find that electronic doping is neccessary, which is achieved with a Mn/Ga ratio smaller than two. Our study shows how composition and substrate-induced biaxial strain can be combined to design the first room-temperature CFHM., Comment: 5 pages + 4 pages supplementary material

The hybrid halide perovskite CH3NH3PbI3 has enabled solar cells to reach an efficiency of about 20%, demonstrating a pace for improvements with no precedents in the solar energy arena. Despite such explosive progress, the microscopic origin behind the success of such material is still debated, with the role played by the organic cations in the light-harvesting process remaining unclear. Here van der Waals-corrected density functional theory calculations reveal that the orientation of the organic molecules plays a fundamental role in determining the material electronic properties. For instance, if CH3NH3 orients along a (011)-like direction, the PbI6 octahedral cage will distort and the bandgap will become indirect. Our results suggest that molecular rotations, with the consequent dynamical change of the band structure, might be at the origin of the slow carrier recombination and the superior conversion efficiency of CH3NH3PbI3., Hybrid halide perovskite solar cells are studied as easy to fabricate compounds for efficient solar cell devices. Here, the authors use density functional theory calculations to show that the orientation of the organic molecules in these materials is crucial for their electronic and solar conversion properties.

We report state-of-the-art atomistic simulations combined with high-fidelity conductance calculations to probe structure-conductance relationships in Au-benzenedithiolate(BDT)-Au junctions under elongation. Our results demonstrate that large increases in conductance are associated with the formation of monatomic chains (MACs) of Au atoms directly connected to BDT. An analysis of the electronic structure of the simulated junctions reveals that enhancement in the s-like states in Au MACs causes the increases in conductance. Other structures also result in increased conductance but are too short-lived to be detected in experiment, while MACs remain stable for long simulation times. Examinations of thermally evolved junctions with and without MACs show negligible overlap between conductance histograms, indicating that the increase in conductance is related to this unique structural change and not thermal fluctuation. These results, which provide an excellent explanation for a recently observed anomalous experimental result [Bruot et al., Nature Nanotech., 2012, 7, 35-40], should aid in the development of mechanically responsive molecular electronic devices., Comment: To appear in Nanoscale; 5 pages, 4 figures

We analyze electron transport in multiprobe quantum spin Hall (QSH) bars using the B\"{u}ttiker formalism and draw parallels with their quantum Hall (QH) counterparts. We find that in a QSH bar the measured resistance changes upon introducing side voltage probes, in contrast to the QH case. We also study four- and six-terminal geometries and derive the expressions for the resistances. For these our analysis is generalized from the single-channel to the multi-channel case and to the inclusion of backscattering originating from a constriction placed within the bar., Comment: 6 pages, 5 figures

We propose, by performing advanced ab initio electron transport calculations, an all-oxide composite magnetic tunnel junction, within which both large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist. The TMR originates from the symmetry-driven spin filtering provided by an insulating BaTiO(3) barrier to the electrons injected from the SrRuO(3) electrodes. Following recent theoretical suggestions, the TER effect is achieved by intercalating a thin insulating layer, here SrTiO(3), at one of the SrRuO(3)/BaTiO(3) interfaces. As the complex band structure of SrTiO(3) has the same symmetry as that of BaTiO(3), the inclusion of such an intercalated layer does not negatively alter the TMR and in fact increases it. Crucially, the magnitude of the TER also scales with the thickness of the SrTiO(3) layer. The SrTiO(3) thickness becomes then a single control parameter for both the TMR and the TER effect. This protocol offers a practical way to the fabrication of four-state memory cells.

We investigate Andreev reflection in two-dimensional heterojunctions formed by a superconductor in contact with a topological insulator ribbon either possessing or breaking time-reversal symmetry. Both classes of topological insulators exhibit perfect Andreev reflection, which is robust against disorder. This is assigned to topologically protected edge states. In the time-reversal symmetric case we show that doping one of the ribbon edges with magnetic impurities suppresses one Andreev channel, while no such suppression is seen in the broken symmetry situation. Based on this observation we suggest a tabletop transport experiment able to distinguish between the two types of topological insulators, which does not involve the direct measurement of the material band structure., Comment: Updated text, references added, published version

In this work we study the topologically protected states of the Sb(111) surface by using ab-initio transport theory. In the presence of a strong surface perturbation we obtain standing-wave states resulting from the superposition of spin-polarized surface states. By Fourier analysis, we identify the underlying two dimensional scattering processes and the spin texture. We find evidence of resonant transmission across surface barriers at quantum well states energies and evaluate their lifetimes. Our results are in excellent agreement with experimental findings. We also show that despite the presence of a step edge along a different high symmetry direction, not yet probed experimentally, the surface states exhibit unperturbed transmission around the Fermi energy for states with near to normal incidence., Comment: Updated text, reference added, published version

We report on a density functional theory study demonstrating the coexistence of weak ferromagnetism and antiferroelectricity in boron-deficient ${\mathrm{MgB}}_{6}$. A boron vacancy produces an almost one dimensional extended molecular orbital, which is responsible for the magnetic moment formation. Then, long-range magnetic order can emerge from the overlap of such orbitals above percolation threshold. Although there is a finite density of states at the Fermi level, the localized nature of the charge density causes an inefficient electron screening. We find that the ${\mathrm{Mg}}^{2+}$ ions can displace from the center of their cubic cage, thus generating electrical dipoles. In the ground state these order in an antiferroelectric configuration. If proved experimentally, this will be the first material without $d$ or $f$ electrons displaying the coexistence of magnetic and electric order.

We demonstrate that a quantum spin Hall current, spontaneously generated at the edge of a two-dimensional topological insulator, acts as a source of spin-pumping for a magnetic impurity with uniaxial anisotropy. One can then manipulate the impurity spin direction by means of an electrical current without using either magnetic electrodes or an external magnetic field. Furthermore we show that the unique properties of the quantum spin Hall topological state have profound effects on the inelastic electron tunneling spectrum of the impurity. For low current densities inelastic spin-flip events do not contribute to the conductance. As a consequence the conductance steps, normally appearing at voltages corresponding to the spin excitations, are completely suppressed. In contrast an intense current leads to spin pumping and generates a transverse component of the impurity spin. This breaks the topological phase yielding to the conductance steps., Comment: Updated text, added figure, published version

We present a theoretical study of the spin transport properties of monoatomic magnetic chains with a focus on the spectroscopical features of the $I$-$V$ curve associated with spin-flip processes. Our calculations are based on the $s$-$d$ model for magnetism with the electron transport treated at the level of the nonequilibrium Green's function formalism. Inelastic spin-flip scattering processes are introduced perturbatively via the first Born approximation, and an expression for the associated self-energy is derived. The computational method is then applied to describe the $I$-$V$ characteristics and its derivatives of one-dimensional chains of Mn atoms, and the results are then compared to available experimental data. We find a qualitative and quantitative agreement between the calculated and the experimental conductance spectra. Significantly we are able to describe the relative intensities of the spin excitation features in the $I$-$V$ curve, by means of a careful analysis of the spin transition selection rules associated with the atomic chains.

Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent experiments. The carrier mobility limited by edge doping is studied as a function of the GNR width, doping density, and carrier density by using ab initio density functional and parameterized tight binding simulations combined with the non-equilibrium Green's function formalism for quantum transport. The results indicate that for GNRs wider than about 4nm, the mobility scales approximately linearly with the GNR width, inversely proportional to the edge doping concentration and decreases for an increasing carrier density. For narrower GNRs, dependence of the mobility on the GNR width and carrier density can be qualitatively different., Comment: 15 pages, 7 figures

We investigate the spin transport properties of molecules belonging to the acenes series by using density functional theory combined with the non-equilibrium Green's function approach to electronic transport. While short acenes are found to be non-magnetic, molecules comprising more than nine acene rings have a spin-polarized ground state. In their gas phase these have a singlet total spin configuration, since the two unpaired electrons occupying the doubly degenerate highest molecular orbital are antiferromagnetically coupled to each other. Such an orbital degeneracy is however lifted once the molecule is attached asymmetrically to Au electrodes via thiol linkers, leading to a fractional magnetic moment. In this situation the system Au/n-acene/Au can act as an efficient spin-filter with interesting applications in the emerging field of organic spintronics., Comment: 13 pages,9 figures

We present an efficient method for evaluating current-induced forces in nanoscale junctions, which naturally integrates into the non-equilibrium Green's function formalism implemented within density functional theory. This allows us to perform dynamical atomic relaxation in the presence of an electric current while also evaluating the current-voltage characteristics. The central idea consists in expressing the system energy density matrix in terms of Green's functions. In order to validate our implementation we perform a series of benchmark calculations, both at zero and finite bias. Firstly we evaluate the current-induced forces acting over an Al nanowire and compare them with previously published results for fixed geometries. Then we perform structural relaxation of the same wires under bias and determine the critical voltage at which they break. We find that, while a perfectly straight wire does not break at any of the voltages considered, a zigzag wire is more fragile and snaps at 1.4 V, with the Al atoms moving against the electron flow. Finally we demonstrate the capability of our scheme to tackle the electromigration problem by studying the current-induced motion of a single Si atom covalently attached to the sidewall of a (4,4) armchair single-walled carbon nanotube. Our calculations indicate that if Si is attached along the current path, then current-induced forces can induce migration. In contrast, if the bonding site is away from the current path, then the adatom will remain stable regardless of the voltage. An analysis based on decomposing the total force into a wind and an electrostatic component, as well as on a detailed evaluation of the bond currents, shows that this remarkable electromigration phenomenon is due solely to the position-dependent wind force., Comment: 25 pages, 14 figures

The effects of water wetting conditions on the transport properties of molecular nanojunctions are investigated theoretically by using a combination of empirical-potential molecular-dynamics and first-principles electronic-transport calculations. These are at the level of the nonequilibrium Green's-function method implemented for self-interaction corrected density-functional theory. We find that water effectively produces electrostatic gating to the molecular junction with a gating potential determined by the time-averaged water dipole field. Such a field is large for the polar benzene-dithiol molecule, resulting in a transmission spectrum shifted by about 0.6 eV with respect to that of the dry junction. The situation is drastically different for carbon nanotubes (CNTs). In fact, because of their hydrophobic nature the gating is almost negligible so that the average transmission spectrum of wet Au/CNT/Au junctions is essentially the same as that in dry conditions. This suggests that CNTs can be used as molecular interconnects also in water-wet situations, for instance, as tips for scanning tunnel microscopy in solution or in biological sensors.

We investigate the electron-transport properties of a model magnetic molecule formed by two magnetic centers whose exchange coupling can be altered with a longitudinal electric field. In general, we find a negative differential conductance at low temperatures originating from the different scattering amplitudes of the singlet and triplet states. More interestingly, when the molecule is strongly coupled to the leads and the potential drop at the magnetic centers is only weakly dependent on the magnetic configuration, we find that there is a critical voltage ${V}_{\text{C}}$ at which the current becomes independent of the temperature. This corresponds to a peak in the low-temperature current noise. In such limit, we demonstrate that the quadratic current fluctuations are proportional to the product between the conductance fluctuations and the temperature.

The non equilibrium Green function formalism is today the standard computational method for describing elastic transport in molecular devices. This can be extended to include inelastic scattering by the so called self-consistent Born approximation (SCBA), where the interaction of the electrons with the vibrations of the molecule is assumed to be weak and it is treated perturbatively. The validity of such an assumption and therefore of the SCBA is difficult to establish with certainty. In this work we explore the limitations of the SCBA by using a simple tight-binding model with the electron-phonon coupling strength $\rm{\alpha}$ chosen as a free parameter. As model devices we consider Au mono-atomic chains and a $\rm{H_2}$ molecule sandwiched between Pt electrodes. In both cases our self-consistent calculations demonstrate a breakdown of the SCBA for large $\rm{\alpha}$ and we identify a weak and strong coupling regime. For weak coupling our SCBA results compare closely with those obtained with exact scattering theory. However in the strong coupling regime large deviations are found. In particular we demonstrate that there is a critical coupling strength, characteristic of the materials system, beyond which multiple self-consistent solutions can be found depending on the initial conditions in the simulation. We attribute these features to the breakdown of the perturbative expansion leading to the SCBA., Comment: 12 pages, 16 figures, 1 Table

Magnetic $3d$ ions doped into wide-gap oxides show signatures of room-temperature ferromagnetism, although their concentration is two orders of magnitude smaller than that in conventional magnets. The prototype of these exceptional materials is Co-doped ZnO, for which an explanation of the room-temperature ferromagnetism is still elusive. Here we demonstrate that magnetism originates from ${\text{Co}}^{2+}$ oxygen-vacancy pairs with a partially filled level close to the ZnO conduction-band minimum. The magnetic interaction between these pairs is sufficiently long ranged to cause percolation at moderate concentrations. However, magnetically correlated clusters large enough to show hysteresis at room temperature already form below the percolation threshold and explain the current experimental findings. Our work demonstrates that the magnetism in ZnO:Co is entirely governed by intrinsic defects and a phase diagram is presented. This suggests a recipe for tailoring the magnetic properties of spintronics materials by controlling their intrinsic defects.

We investigate the interplay between magnetic and structural dynamics in ferromagnetic atomic point contacts. In particular, we look at the effect of the atomic relaxation on the energy barrier for magnetic domain wall migration and, reversely, at the effect of the magnetic state on the mechanical forces and structural relaxation. We observe changes of the barrier height due to the atomic relaxation up to 200%, suggesting a very strong coupling between the structural and the magnetic degrees of freedom. The reverse interplay is weak, i.e. the magnetic state has little effect on the structural relaxation at equilibrium or under non-equilibrium, current-carrying conditions., Comment: 5 pages, 4 figures

Using first principles simulations we perform a detailed study of the structural, electronic and transport properties of monoatomic platinum chains, sandwiched between platinum electrodes. First we demonstrate that the most stable atomic configuration corresponds to a zigzag arrangement that gradually straightens as the chains are stretched. Secondly, we find that the conductance at equilibrium atomic spacing does not oscillate with the number of atoms $n$ in the chain, but instead decreases almost monotonically with $n$. In contrast, the conductances of chains of fixed $n$ oscillate as the end atoms are pulled apart, due to the gradual closing and opening of conductance channels as the chain straightens., Comment: 4 pages. 5 Figures. Version with a new reference

All density functional calculations of single-molecule transport to date have used continuous exchange-correlation approximations. The lack of derivative discontinuity in such calculations leads to the erroneous prediction of metallic transport for insulating molecules. A simple and computationally undemanding atomic self-interaction correction greatly improves the agreement with experiment for the prototype Au/dithiolated-benzene/Au junction., Comment: 4 pages. Also available at http://www.smeagol.tcd.ie

We report a detailed theoretical study of the bonding and conduction properties of an hydrogen molecule joining either platinum or palladium electrodes. We show that an atomic arrangement where the molecule is placed perpendicular to the electrodes is unstable for all distances between electrodes. In contrast, the configuration where the molecule bridges the electrodes is stable in a wide range of distances. In this last case the bonding state of the molecule does not hybridize with the leads and remains localized within the junction. As a result, this state does not transmit charge so that electronic transport is carried only through the anti-bonding state. This fact leads to conductances of 1 $G_0$ at most, where $G_0=2e^2/h$. We indeed find that G is equal to 0.9 and 0.6 $G_0$ for Pt and Pd contacts respectively., Comment: 6 pages, 6 figures. Submitted to Phys. Rev. B

We present a theoretical density functional study of the electronic, magnetic, and transport properties of digital ferromagnetic heterostructures, obtained by d doping GaAs with Mn. In the absence of intrinsic donors these systems have a half metallic density of states, with an exchange interaction much stronger than that of a random alloy with the same Mn concentration. Our ab initio ballistic transport calculations show that the carriers at the Fermi energy are strongly confined within a few monolayers around the MnAs plane. This strong confinement is responsible for the large exchange coupling and the twodimensional half metallic behavior. Diluted magnetic semiconductors (DMS) based on III-V materials [1,2] are receiving great attention for the intriguing interplay between magnetic and electronic properties [3] and for the large potential for future electronic devices [4]. Ga12xMnxAs, which is structurally compatible with most epitaxially grown III-V’s, is the prototype of these materials. Here the Mn ions substitute randomly for the Ga ions, providing both localized S 52 spins and free carriers (holes). The antiferromagnetic exchange coupling between the hole spin and the Mn spin is responsible for the long range ferromagnetic interaction, which can be described in a first approximation by the Zener model [5]. One important result of the model is that the Curie temperature is a linear function of the Mn concentration. Although the inclusion in the model of correlation effects [6] modifies this linear dependence, there is general agreement that an increase in the Mn concentration enhances the Curie temperature of the system. Unfortunately, the solubility limit of Mn in GaAs is rather small, since MnAs naturally occurs in a hexagonal phase with [6]-coordinated Mn [7]. However large Mn concentration, up to 50% can be obtained in zinc blende MnAs submonolayers embedded into GaAs to form a MnAsGaAs superlattice [8]. These structures, called digital ferromagnetic heterostructures (DFH) have remarkable properties. First, the Curie temperature decays for increasing GaAs interlayer thickness, and saturates for thicknesses larger than 50 GaAs ML. The value of Tc at saturation depends on the Mn concentration [8]. A saturation is unexpected according to the Zener model for three-dimensional systems, since the total Mn concentration in the sample decreases with the increase of the GaAs thickness. This separation dependence suggests that DFH’s behave like planar systems, although to date there is no direct proof that the free carriers responsible for the magnetic interaction are confined in the MnAs layers. Second, Hall measurements in the direction parallel to the MnAs planes show an anomalous Hall effect for undoped samples, which disappears upon Be doping [9,10]. Large Shubnikov de Haas oscillations are found in doped samples, although surprisingly the charge densities extracted from the Hall coefficient and from the Shubnikov de Haas oscillations are different. This suggests that two different carrier types could be present in the system. In this Letter we investigate theoretically the magnetic and transport properties of undoped DFH. In particular, we address the following questions: (i) What is the real dimensionality of the system? (ii) Are the carriers spin polarized? (iii) What is the carrier distribution in the system? We perform density functional theory [11] calculations within the local spin density approximation using the Ceperley-Alder [12] form of the exchange-correlation potential. We use scalar relativistic Troullier-Martins pseudopotentials [13] with nonlinear core corrections and Kleinman-Bylander factorization. We choose the SIESTA implementation [14] because it uses a localized orbital basis set obtained from the numerical solution of the free atom pseudopotential, and a confining spherical potential of radius rc. The cutoff radius rc fixes the radial extension of the wave functions, which therefore are localized in space. This allows us to investigate systems with a large number of atoms. Further details of the method and its optimization have already been presented [15]. Each DFH superlattice is constructed by considering N GaAs cubic

In this paper we review the latest achievements of density functional theory in understanding the physics of diluted magnetic semiconductors. We focus on transition metal doped III-V semiconductors, which show spontaneous ferromagnetic order at relatively high temperature and good structural compatibility with existing III-V devices. We show that density functional theory is a very powerful tool for i) studying the effects of local doping defects and disorder on the magnetic properties of these materials, ii) predicting properties of new materials and iii) providing parameters, often not accessible from experiments, for use in model Hamiltonian calculations. Such studies are facilitated by recent advances in numerical implementations of density functional theory, which make the study of systems with a very large number of atoms possible., Comment: Invited article for Journal of Superconductivity and Novel Magnetic Materials

Using a scattering technique based on a parametrized linear combination of atomic orbitals Hamiltonian, we calculate the ballistic quantum conductance of multi-wall carbon nanotubes. We find that inter-wall interactions not only block some of the quantum conductance channels, but also redistribute the current non-uniformly over the individual tubes across the structure. Our results provide a natural explanation for the unexpected integer and non-integer conductance values reported for multi-wall nanotubes in Ref.[S. Frank, P. Poncharal, Z.L. Wang, and W. A. de Heer, Science 280, 1744 (1998)], Comment: 16 pages, 5 figures, submitted to PRL

We study the effect on CPP GMR of changing the order of the layers in a multilayer. Using a tight-binding simple cubic two band model (s-d), magneto-transport properties are calculated in the zero-temperature, zero-bias limit, within the Landauer-Buttiker formalism. We demonstrate that for layers of different thicknesses formed from a single magnetic metal and multilayers formed from two magnetic metals, the GMR ratio and its dependence on disorder is sensitive to the order of the layers. This effect disappears in the limit of large disorder, where the results of the widely-used Boltzmann approach to transport are restored., Comment: 5 pages, 4 figures

We present a numerical study of conductance oscillations of transition metal multilayers as a function of layer thickness. Using a material-specific tight-binding model, we show that for disorder-free layers with random thicknesses but clean interfaces, long-period oscillations in the conductance can occur, which are reminiscent of those found in structures exhibiting GMR. Using a heuristic effective mass model, we argue that these oscillations arise from beating between the Fermi wavevector and a class of wavevectors characteristic of the superlattice structure., Comment: 4 pages, 4 figures