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Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials1,2,3, cold atoms4 and photonic systems5 through hybridization with photon-dressed Floquet states6 in the strong-coupling limit, dubbed Floquet engineering. Such interaction leads to tailored properties of quantum materials7,8,9,10,11, for example, modifications of the topological properties of Dirac materials12,13 and modulation of the optical response14,15,16. Despite extensive research interests over the past decade3,8,17,18,19,20, there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, on the basis of time and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor, black phosphorus. On near-resonance pumping at a photon energy of 340–440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favouring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquetband engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus and provides important guiding principles for Floquet engineering of semiconductors.

The quantum anomalous Hall effect (QAHE) has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = $\pm$1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = $\pm$3 can be realized in a single material candidate, which is composed of van der Waals (vdW) coupled Bi and MnBi$_2$Te$_4$ monolayers. The switching between different phases of QAHE can be controllable by multiple ways, such as applying strain or (weak) magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics., Comment: 14 pages, 4 figures

The marriage of density functional theory (DFT) and deep learning methods has the potential to revolutionize modern computational materials science. Here we develop a deep neural network approach to represent DFT Hamiltonian (DeepH) of crystalline materials, aiming to bypass the computationally demanding self-consistent field iterations of DFT and substantially improve the efficiency of ab initio electronic-structure calculations. A general framework is proposed to deal with the large dimensionality and gauge (or rotation) covariance of DFT Hamiltonian matrix by virtue of locality and is realized by the message passing neural network for deep learning. High accuracy, high efficiency and good transferability of the DeepH method are generally demonstrated for various kinds of material systems and physical properties. The method provides a solution to the accuracy-efficiency dilemma of DFT and opens opportunities to explore large-scale material systems, as evidenced by a promising application to study twisted van der Waals materials.

Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi2Te4. At its two-dimensional limit, quantum anomalous Hall (QAH) effect and axion insulator state are observed in odd and even layers of MnBi2Te4, respectively. The measured band structures exhibit intriguing and complex properties. Here we employ low-temperature scanning tunneling microscopy to study its surface states and magnetic response. The quasiparticle interference patterns indicate that the electronic structures on the topmost layer of MnBi2Te4 is different from that of the expected out-of-plane A-type antiferromagnetic phase. The topological surface states may be embedded in deeper layers beneath the topmost surface. Such novel electronic structure presumably related to the modification of crystalline structure during sample cleaving and re-orientation of magnetic moment of Mn atoms near the surface. Mn dopants substituted at the Bi site on the second atomic layer are observed. The ratio of Mn/Bi substitutions is 5%. The electronic structures are fluctuating at atomic scale on the surface, which can affect the magnetism of MnBi2Te4. Our findings shed new lights on the magnetic property of MnBi2Te4 and thus the design of magnetic topological insulators.

Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One approach to introduce an energy gap is to use hydrogenation reaction, which changes graphene into insulating graphane with sp3 bonding. Here we show that an electric field can be used to control conductor-to-insulator transitions in microscale graphene via a reversible electrochemical hydrogenation in an organic liquid electrolyte containing dissociative hydrogen ions. The fully hydrogenated graphene exhibits a lower limit sheet resistance of 200 Gohm/sq, resulting in graphene field-effect transistors with on/off current ratios of 10^8 at room temperature. The devices also exhibit high endurance, with up to one million switching cycles. Similar insulating behaviours are also observed in bilayer graphene, while trilayer graphene remains highly conductive after the hydrogenation. Changes in the graphene lattice, and the transformation from sp2 to sp3 hybridization, is confirmed by in-situ Raman spectroscopy, supported by first-principles calculations., Comment: 20 pages, 4 figures

Research on topological physics of phonons has attracted enormous interest but demands appropriate model materials. Our {\it ab initio} calculations identify silicon as an ideal candidate material containing extraordinarily rich topological phonon states. In silicon, we identify various topological nodal lines protected by glide mirror or mirror symmetries and characterized by quantized Berry phase $\pi$, which gives drumhead surface states observable from any surface orientations. Remarkably, a novel type of topological nexus phonon is discovered, which is featured by double Fermi-arc-like surface states and distinguished from Weyl phonons by requiring neither inversion nor time-reversal symmetry breaking. Versatile topological states can be created from the nexus phonons, such as Hopf nodal link by strain. Furthermore, we generalize the symmetry analysis to other centrosymmetric systems and find numerous candidate materials, demonstrating the ubiquitous existence of topological phonons in solids. These findings open up new opportunities for studying topological phonons in realistic materials and their influence on surface physics.

Inducing or enhancing superconductivity in topological materials is an important route toward topological superconductivity. Reducing the thickness of transition metal dichalcogenides (e.g. WTe2 and MoTe2) has provided an important pathway to engineer superconductivity in topological matters; for instance, emergent superconductivity with Tc=0.82 K was observed in monolayer WTe2 which also hosts intriguing quantum spin Hall effect, although the bulk crystal is nonsuperconducting. However, such monolayer sample is difficult to obtain, unstable in air, and with extremely low Tc, which could pose a grand challenge for practical applications. Here we report an experimentally convenient approach to control the interlayer coupling to achieve tailored topological properties, enhanced superconductivity and good sample stability through organic cation intercalation of the Weyl semimetals MoTe2 and WTe2. The as-formed organic-inorganic hybrid crystals are weak topological insulators with enhanced Tc of 7.0 K for intercalated MoTe2 (0.25 K for pristine crystal) and 2.3 K for intercalated WTe2 (2.8 times compared to monolayer WTe2). Such organic-cationintercalation method can be readily applied to many other layered crystals, providing a new pathway for manipulating their electronic, topological and superconducting properties.

A resilient superconductor Superconductivity typically does not fare well in the presence of magnetic fields, which tend to break the electron pairs that make a material superconducting. However, some materials, such as the recently discovered Ising superconductors, retain their properties in very high magnetic fields. Ising pairing was identified in transition metal dichalcogenides such as molybdenum disulfide and required the breaking of inversion symmetry. Falson et al. have now found a similar resilience to in-plane magnetic fields in another two-dimensional material, few-layer stanene. The band structure of stanene and the lack of inversion symmetry breaking in the system required a distinct theoretical model to explain this property, now dubbed type II Ising pairing. Science , this issue p. 1454

PtTe2 and PtSe2 with trigonal structure have attracted extensive research interests since the discovery of type-II Dirac fermions in the bulk crystals. The evolution of the electronic structure from bulk 3D topological semimetal to 2D atomic thin films is an important scientific question. While a transition from 3D type-II Dirac semimetal in the bulk to 2D semiconductor in monolayer (ML) film has been reported for PtSe2, so far the evolution of electronic structure of atomically thin PtTe2 films still remains unexplored. Here we report a systematic angle-resolved photoemission spectroscopy (ARPES) study of the electronic structure of high quality PtTe2 films grown by molecular beam epitaxy with thickness from 2 ML to 6 ML. ARPES measurements show that PtTe2 films still remain metallic even down to 2 ML thickness, which is in sharp contrast to the semiconducting property of few layer PtSe2 film. Moreover, a transition from 2D metal to 3D type-II Dirac semimetal occurs at film thickness of 4-6 ML. In addition, Spin-ARPES measurements reveal helical spin textures induced by local Rashba effect in the bulk PtTe2 crystal, suggesting that similar hidden spin is also expected in few monolayer PtTe2 films. Our work reveals the transition from 2D metal to 3D topological semimetal and provides new opportunities for investigating metallic 2D films with local Rashba effect., Comment: 10 pages, 4 figures

We report experimental evidence of charge density wave (CDW) transition in monolayer 1T-VTe$_2$ film. 4$\times$4 reconstruction peaks are observed by low energy electron diffraction below the transition temperature $T_{CDW}$ = 186 K. Angle-resolved photoemission spectroscopy measurements reveal arc-like pockets with anisotropic CDW gaps up to 50 meV. The anisotropic CDW gap is attributed to the imperfect nesting of the CDW wave vector, and first-principles calculations reveal phonon softening at the same vector, suggesting the important roles of Fermi surface nesting and electron-phonon interaction in the CDW mechanism.

Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi$_2$Te$_4$ thin films. Under an out-of-plane electric field that breaks $\mathcal{PT}$ symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi$_2$Te$_4$ thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototype for future AFM spintronic applications., Comment: 7 pages, 4 figures

Solid solubility (SS) is one of the most important features of alloys, which is usually difficult to be largely tuned in the entire alloy concentrations by external approaches. Some alloys that were supposed to have promising physical properties could turn out to be much less useful because of their poor SS, e.g., the case for monolayer BNC [(BN)1-x(C2)x] alloys. Until now, an effective approach on significantly enhancing SS of (BN)1-x(C2)x in the entire x is still lacking. In this article, a novel mechanism of selective orbital coupling between high energy wrong-bond states and surface states mediated by the specific substrate has been proposed to stabilize the wrong-bonds and in turn significantly enhance the SS of (BN)1-x(C2)x alloys. Surprisingly, we demonstrate that five ordered alloys, exhibiting variable direct quasi-particle bandgaps from 1.35 to 3.99 eV, can spontaneously be formed at different x when (BN)1-x(C2)x is grown on hcp-phase Cr. Interestingly, the optical transitions around the band edges in these ordered alloys, accompanied by largely tunable exciton binding energies of ~1 eV at different x, are significantly strong due to their unique band structures. Importantly, the disordered (BN)1-x(C2)x alloys, exhibiting fully tunable bandgaps from 0 to ~6 eV in the entire x, can be formed on Cr substrate at the miscibility temperature of ~1200 K, which is greatly reduced compared to that of 4500~5600 K in free-standing form or on other substrates. Our discovery not only may resolve the long-standing SS problem of BNC alloys, but also could significantly extend the applications of BNC alloys for various optoelectronic applications., Comment: 22 pages, 5 figures

Phonons as collective excitations of lattice vibrations are the main heat carriers in solids. Tremendous effort has been devoted to investigate phonons and related properties, giving rise to an intriguing field of phononics, which is of great importance to many practical applications, including heat dissipation, thermal barrier coating, thermoelectrics and thermal control devices. Meanwhile, the research of topology-related physics, awarded the 2016 Nobel Prize in Physics, has led to discoveries of various exotic quantum states of matter, including the quantum (anomalous/spin) Hall [Q(A/S)H] effects, topological insulators/semimetals and topological superconductors. An emerging research field is to bring topological concepts for a new paradigm phononics---"topological phononics". In this Perspective, we will briefly introduce this emerging field and discuss the use of novel quantum degrees of freedom like the Berry phase and topology for manipulating phonons in unprecedentedly new ways., Comment: Accepted by National Science Review (2017)

Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors since oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work demonstrated that both migration of oxygen vacancies and coexistence of cation and anion vacancies are crucial to the occurrence of bipolar memristive switching, normally observed in the small-sized NiO. So far, experimental work addressing this issue is still lacking. In this work, with conductive atomic force microscope and combined scanning transmission electron microscopy & electron energy loss spectroscopy, we reveal that concentration surplus of Ni vacancy over O vacancy determines the bipolar memristive switching of NiO films. Our work supports the dual-defects-based model, which is of fundamental importance for understanding the memristor mechanisms beyond the well-established oxygen-vacancy-based model. Moreover, this work provides a methodology to investigate the effect of dual defects on memristive behaviors., ACS Applied Materials & Interfaces 2016

The search for exotic topological effects of phonons has attracted enormous interest for both fundamental science and practical applications. By studying phonons in a Kekul\'e lattice, we find a new type of pseudospins characterized by quantized Berry phases and pseudoangular momenta, which introduces various novel topological effects, including topologically protected pseudospin-polarized interface states and a phonon pseudospin Hall effect. We further demonstrate a pseudospin-contrasting optical selection rule and a pseudospin Zeeman effect, giving a complete generation-manipulation-detection paradigm of the phonon pseudospin. The pseudospin and topology-related physics revealed for phonons is general and applicable for electrons, photons and other particles., Comment: 5 pages, 4 figures, accepted by PRL

The quantum anomalous Hall effect, an exotic topological state first theoretically predicted by Haldane and recently experimentally observed, has attracted enormous interest for low-power-consumption electronics. In this work, we derived a Schr{\"o}dinger-like equation of phonons, where topology-related quantities, time reversal symmetry and its breaking can be naturally introduced similar as for electrons. Furthermore, we proposed a phononic analog of the Haldane model, which gives the novel quantum (anomalous) Hall-like phonon states characterized by one-way gapless edge modes immune to scattering. The topologically nontrivial phonon states are useful not only for conducting phonons without dissipation but also for designing highly efficient phononic devices, like an ideal phonon diode, which could find important applications in future phononics., Comment: Phys. Rev. B (accepted)

Recently, a new "type-II" Weyl fermion, which exhibits exotic phenomena such as angle-dependent chiral anomaly, was discovered in a new phase of matter where electron and hole pockets contact at isolated Weyl points. [Nature \textbf{527}, 495 (2015)] This raises an interesting question whether its counterpart, i.e., type-II \textit{Dirac} fermion, exists in real materials. Here, we predict the existence of symmetry-protected type-II Dirac fermions in a class of transition metal dichalcogenide materials. Our first-principles calculations on PtSe$_2$ reveal its bulk type-II Dirac fermions which are characterized by strongly tilted Dirac cones, novel surface states, and exotic doping-driven Lifshitz transition. Our results show that the existence of type-II Dirac fermions in PtSe$_2$-type materials is closely related to its structural $P\bar{3}m1$ symmetry, which provides useful guidance for the experimental realization of type-II Dirac fermions and intriguing physical properties distinct from those of the standard Dirac fermions known before., Comment: 12 pages, 3 figures

The introduction of magnetism in SnTe-class topological crystalline insulators is a challenging subject with great importance in the quantum device applications. Based on the first-principles calculations, we have studied the defect energetics and magnetic properties of 3d transition-metal (TM)-doped SnTe. We find that the doped TM atoms prefer to stay in the neutral states and have comparatively high formation energies, suggesting that the uniform TM doping in SnTe with a higher concentration will be difficult unless clustering. In the dilute doping regime, all the magnetic TM atoms are in the high-spin states, indicating that the spin splitting energy of 3d TM is stronger than the crystal splitting energy of the SnTe ligand. Importantly, Mn-doped SnTe has relatively low defect formation energy, largest local magnetic moment, and no defect levels in the bulk gap, suggesting that Mn is a promising magnetic dopant to realize the magnetic order for the theoretically-proposed large-Chern-number quantum anomalous Hall effect (QAHE) in SnTe.

Weyl semimetal is a new quantum state of matter [1-12] hosting the condensed matter physics counterpart of relativisticWeyl fermion [13] originally introduced in high energy physics. The Weyl semimetal realized in the TaAs class features multiple Fermi arcs arising from topological surface states [10, 11, 14-16] and exhibits novel quantum phenomena, e.g., chiral anomaly induced negative mag-netoresistance [17-19] and possibly emergent supersymmetry [20]. Recently it was proposed theoretically that a new type (type-II) of Weyl fermion [21], which does not have counterpart in high energy physics due to the breaking of Lorentz invariance, can emerge as topologically-protected touching between electron and hole pockets. Here, we report direct spectroscopic evidence of topological Fermi arcs in the predicted type-II Weyl semimetal MoTe2 [22-24]. The topological surface states are confirmed by directly observing the surface states using bulk-and surface-sensitive angle-resolved photoemission spectroscopy (ARPES), and the quasi-particle interference (QPI) pattern between the two putative Fermi arcs in scanning tunneling microscopy (STM). Our work establishes MoTe2 as the first experimental realization of type-II Weyl semimetal, and opens up new opportunities for probing novel phenomena such as exotic magneto-transport [21] in type-II Weyl semimetals., Comment: submitted on 01/29/2016. Nature Physics, in press. Spectroscopic evidence of the Fermi arcs from two complementary surface sensitive probes - ARPES and STS. A comparison of the calculated band structure for T_d and 1T' phase to identify the topological Fermi arcs in the T_d phase is also included in the supplementary information

The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices. It also stimulates the explorations of more topological states of matter. Topological crystalline insulator is a new topological phase, which combines the electronic topology and crystal symmetry together. In this article, we review the recent progress in the studies of SnTe-class topological crystalline insulator materials. Starting from the topological identifications in the aspects of the bulk topology, surface states calculations and experimental observations, we present the electronic properties of topological crystalline insulators under various perturbations, including native defect, chemical doping, strain, and thickness-dependent confinement effects, and then discuss their unique quantum transport properties, such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions. The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices., Comment: 15 pages, 15 figures, invited review

The IrTe2 transition metal dichalcogenide undergoes a series of structural and electronic phase transitions when doped with Pt. The nature of each phase and the mechanism of the phase transitions have attracted much attention. In this paper, we report scanning tunneling microscopy and spectroscopy studies of Pt doped IrTe2 with varied Pt contents. In pure IrTe2, we find that the ground state has a 1/6 superstructure, and the electronic structure is inconsistent with Fermi surface nesting induced charge density wave order. Upon Pt doping, the crystal structure changes to a 1/5 superstructure and then to a quasi-periodic hexagonal phase. First principles calculations show that the superstructures and electronic structures are determined by the global chemical strain and local impurity states that can be tuned systematically by Pt doping., Comment: 6 figures

Two-dimensional Dirac physics has aroused great interests in condensed matter physics ever since the discovery of graphene and topological insulators due to its importance in both fundamental physics and device applications. The ability to control the properties of Dirac cones, such as bandgap and Fermi velocity, is essential for the occurrence of various new phenomena and the development of next-generation electronic devices. Based on first-principles calculations and an analytical effective model, we propose a new Dirac system with eight Dirac cones in thin films of the (LaO)2(SbSe2)2 family of materials with an external gate voltage. The advantage of this system lies in its tunability: the existence of gapless Dirac cones, their positions, Fermi velocities and anisotropy all can be controlled by an experimentally feasible gate voltage. We identify the layer dependent spin texture induced by spin-orbit coupling as the underlying physical reason for the tunability of Dirac cones in this system. As a consequence, we show that the electrically tunable quantum anomalous Hall effect with a high Chern number can be induced by introducing magnetization into this system., Comment: 22 pages, 17 figures

The spin-polarized electronic structure and half-metallicity of zigzag graphene nanoribbons (ZGNRs) with asymmetric edge terminations are investigated by using first principles calculations. It is found that compared with symmetric hydrogen-terminated counterparts, such ZGNRs maintain a spin-polarized ground state with the anti-ferromagnetic configuration at opposite edges, but their energy bands are no longer spin degenerate. In particular, the energy gap of one spin orientation decreases remarkably. Consequently, the ground state of such ZGNRs is very close to half-metallic state, and thus a smaller critical electric field is required for the systems to achieve the half-metallic state. Moreover, two kinds of studied ZGNRs present massless Dirac-fermion band structure when they behave like half-metals., Comment: 5 pages, 4 figures

We present a first-principles study of the migration and recombination of edge defects (carbon adatom and/or vacancy) and their influence on electrical conductance in zigzag graphene nanoribbons (ZGNRs). It is found that at room temperature, the adatom is quite mobile while the vacancy is almost immobile along the edge of ZGNRs. The recombination of an adatom-vacancy pair leads to a pentagon-heptagon ring defect structure having a lower energy than the perfect edge, implying that such an edge-defect can be formed spontaneously. This edge defect can suppresses the conductance of ZGNRs drastically, which provides some useful hints for understanding the observed semiconducting behavior of the fabricated narrow GNRs., Comment: 6 pages, 4 figures, to appear in PRB

The successful fabrication of single layer graphene has greatly stimulated the progress of the research on graphene. In this article, focusing on the basic electronic and transport properties of graphene nanoribbons (GNRs), we review the recent progress of experimental fabrication of GNRs, and the theoretical and experimental investigations of physical properties and device applications of GNRs. We also briefly discuss the research efforts on the spin polarization of GNRs in relation to the edge states., Comment: 9pages,10figures

Thermal conductance of graphene nanoribbons (GNRs) with the width varying from 0.5 to 35 nm is systematically investigated using nonequilibrium Green's function method. Anisotropic thermal conductance is observed with the room temperature thermal conductance of zigzag GNRs up to ~ 30% larger than that of armchair GNRs. At room temperature, the anisotropy is found to disappear until the width is larger than 100 nm. This intrinsic anisotropy originate from different boundary condition at ribbon edges, and can be used to tune thermal conductance, which have important implications for the applications of GNRs in nanoelectronics and thermoelectricity., Comment: 4 pages, 3 figures

Using a first-principles-based approach, we determine the ferroelectric pattern in PbZr$_{0.5}$Ti$_{0.5}$O$_3$ ultrathin film. It is found that vortex stripes are formed in the system and they are responsible for the 180$^\circ$ domains observed. When a local external field is exerted, the vortex stripe transforms into the vortex loop structure, which leads to the formation of a smaller domain with the polarization antiparallel to the field in the center of the field region. This may provide a convenient way to manipulate nanodomains in thin films., Comment: 5 pages, 3 figures