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A recent experiment has reported the first observation of a zero-field fractional Chern insulator (FCI) phase in twisted bilayer MoTe$_2$ moir\'e superlattices (arXiv: 2304.08470). The experimental observation is at an unexpected large twist angle 3.7$^\circ$ and calls for a better understanding of the FCI in real materials. In this work, we perform large-scale density functional theory calculation for the twisted bilayer MoTe$_2$, and find that lattice reconstruction is crucial for the appearance of an isolated flat Chern band. The existence of the FCI state at $\nu = -2/3$ are confirmed by exact diagonalization. We establish phase diagrams with respect to the twist angle and electron interaction, which reveal an optimal twist angle of $3.5^\circ$ for the observation of FCI. We further demonstrate that an external electric field can destroy the FCI state by changing band geometry and show evidence of the $\nu=-3/5$ FCI state in this system. Our research highlights the importance of accurate single particle band structure in the quest for strong correlated electronic states and provides insights into engineering fractional Chern insulator in moir\'e superlattices.

Understanding quantum many-body systems is at the heart of condensed matter physics. The ability to control the underlying lattice geometry of a system, and thus its many-body interactions, would enable the realization of and transition between emergent quantum ground states. Here, we report in-situ gate switching between honeycomb and triangular lattice geometries of an electron many-body Hamiltonian in R-stacked MoTe2 moiré bilayers, resulting in switchable magnetic exchange interactions. At zero electric field, we observe a correlated ferromagnetic insulator near one hole per moiré unit cell (ν=-1), i.e., a quarter-filled honeycomb lattice, with a widely tunable Curie temperature up to 14K. Fully polarizing layer pseudospin via electric field switches the system into a half-filled triangular lattice with antiferromagnetic interactions. Further doping this layer-polarized superlattice introduces carriers into the empty layer, tuning the antiferromagnetic exchange interaction back to ferromagnetic. Our work demonstrates R-stacked MoTe2 moirés to be a new laboratory for engineering correlated states with nontrivial topology., 13 pages, 4 figures, plus supplementary material

Intelligent inspection robots are widely used in substation patrol inspection, which can help check potential safety hazards by patrolling the substation and sending back scene images. However, when patrolling some marginal areas with weak signal, the scene images cannot be sucessfully transmissted to be used for hidden danger elimination, which greatly reduces the quality of robots'daily work. To solve such problem, a Specific Task-oriented Semantic Communication System for Imag-STSCI is designed, which involves the semantic features extraction, transmission, restoration and enhancement to get clearer images sent by intelligent robots under weak signals. Inspired by that only some specific details of the image are needed in such substation patrol inspection task, we proposed a new paradigm of semantic enhancement in such specific task to ensure the clarity of key semantic information when facing a lower bit rate or a low signal-to-noise ratio situation. Across the reality-based simulation, experiments show our STSCI can generally surpass traditional image-compression-based and channel-codingbased or other semantic communication system in the substation patrol inspection task with a lower bit rate even under a low signal-to-noise ratio situation., Comment: 9 pages, 8 figures

The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic field thanks to its intrinsic ferromagnetism. In the presence of strong electron-electron interactions, exotic fractional-QAH (FQAH) states at zero magnetic field can emerge. These states could host fractional excitations, including non-Abelian anyons - crucial building blocks for topological quantum computation. Flat Chern bands are widely considered as a desirable venue to realize the FQAH state. For this purpose, twisted transition metal dichalcogenide homobilayers in rhombohedral stacking have recently been predicted to be a promising material platform. Here, we report experimental signatures of FQAH states in 3.7-degree twisted MoTe2 bilayer. Magnetic circular dichroism measurements reveal robust ferromagnetic states at fractionally hole filled moir\'e minibands. Using trion photoluminescence as a sensor, we obtain a Landau fan diagram which shows linear shifts in carrier densities corresponding to the v=-2/3 and -3/5 ferromagnetic states with applied magnetic field. These shifts match the Streda formula dispersion of FQAH states with fractionally quantized Hall conductance of -2/3$e^2/h$ and -3/5$e^2/h$, respectively. Moreover, the v=-1 state exhibits a dispersion corresponding to Chern number -1, consistent with the predicted QAH state. In comparison, several non-ferromagnetic states on the electron doping side do not disperse, i.e., are trivial correlated insulators. The observed topological states can be further electrically driven into topologically trivial states. Our findings provide clear evidence of the long-sought FQAH states, putting forward MoTe2 moir\'e superlattices as a fascinating platform for exploring fractional excitations., Comment: 15 pages, 4 figures, v2: extended data (6 figures) is added. Comments are welcome

Discovery of intrinsic two-dimensional (2D) magnetic materials is crucial for understanding the fundamentals of 2D magnetism and realizing next-generation magnetoelectronic and magneto-optical devices. Although significant efforts have been devoted to identifying 2D magnetism by exfoliating bulk magnetic layered materials, seldom studies are performed to synthesize ultra-thin magnetic materials directly for non-layered magnetic materials. Here, we report the successful synthesis of a new type of theoretically proposed 2D metallic ferromagnet 1T FeS2, through the molten-salt-assisted chemical vapor deposition (CVD) method. The long-range 2D ferromagnetic order is confirmed by the observation of a large anomalous Hall effect (AHE) and a hysteretic magnetoresistance. The experimentally detected out-of-plane ferromagnetic ordering is theoretically suported with Stoner criterion. Our findings open up new possibilities to search novel 2D ferromagnets in non-layered compounds and render opportunities for realizing realistic ultra-thin spintronic devices.

In the archetypal monolayer semiconductor WSe$_2$, the distinct ordering of spin-polarized valleys (low-energy pockets) in the conduction band allows for studies of not only simple neutral excitons and charged excitons (i.e., trions), but also more complex many-body states that are predicted at higher electron densities. We discuss magneto-optical measurements of electron-rich WSe$_2$ monolayers, and interpret the spectral lines that emerge at high electron doping as optical transitions of 6-body exciton states ("hexcitons") and 8-body exciton states ("oxcitons"). These many-body states emerge when a photoexcited electron-hole pair interacts simultaneously with multiple Fermi seas, each having distinguishable spin and valley quantum numbers. In addition, we identify the energies of primary and satellite optical transitions of hexcitons in the photoluminescence spectrum.

Traditional communication systems focus on the transmission process, and the context-dependent meaning has been ignored. The fact that 5G system has approached Shannon limit and the increasing amount of data will cause communication bottleneck, such as the increased delay problems. Inspired by the ability of artificial intelligence to understand semantics, we propose a new communication paradigm, which integrates artificial intelligence and communication, the semantic communication system. Semantic communication is at the second level of communication based on Shannon and Weaver\cite{6197583}, which retains the semantic features of the transmitted information and recovers the signal at the receiver, thus compressing the communication traffic without losing important information. Different from other semantic communication systems, the proposed system not only transmits semantic information but also transmits semantic decoder. In addition, a general semantic metrics is proposed to measure the quality of semantic communication system. In particular, the semantic communication system for image, namely AESC-I, is designed to verify the feasibility of the new paradigm. Simulations are conducted on our system with the additive white Gaussian noise (AWGN) and the multipath fading channel using MNIST and Cifar10 datasets. The experimental results show that DeepSC-I can effectively extract semantic information and reconstruct images at a relatively low SNR.

Plasmon polaritons in van der Waals (vdW) materials hold promise for next-generation photonics. The ability to deterministically imprint spatial patterns of high carrier density in cavities and circuitry with nanoscale features underlies future progress in nonlinear nanophotonics and strong light-matter interactions. Here, we demonstrate a general strategy to atomically imprint low-loss graphene plasmonic structures using oxidation-activated charge transfer (OCT). We cover graphene with a monolayer of WSe$_2$, which is subsequently oxidized into high work-function WOx to activate charge transfer. Nano-infrared imaging reveals low-loss plasmon polaritons at the WOx/graphene interface. We insert WSe$_2$ spacers to precisely control the OCT-induced carrier density and achieve a near-intrinsic quality factor of plasmons. Finally, we imprint canonical plasmonic cavities exhibiting laterally abrupt doping profiles with single-digit nanoscale precision via programmable OCT. Specifically, we demonstrate technologically appealing but elusive plasmonic whispering-gallery resonators based on free-standing graphene encapsulated in WOx. Our results open avenues for novel quantum photonic architectures incorporating two-dimensional materials., Comment: 17 pages, 4 figures

Emergent cooperative motions of individual degrees of freedom, i.e. collective excitations, govern the low-energy response of system ground states under external stimulations and play essential roles for understanding many-body phenomena in low-dimensional materials. The hybridization of distinct collective modes provides a route towards coherent manipulation of coupled degrees of freedom and quantum phases. In magnets, strong coupling between collective spin and lattice excitations, i.e., magnons and phonons, can lead to coherent quasi-particle magnon polarons. Here, we report the direct observation of a series of terahertz magnon polarons in a layered zigzag antiferromagnet FePS3 via far-infrared (FIR) transmission measurements. The characteristic avoided-crossing behavior is clearly seen as the magnon-phonon detuning is continuously changed via Zeeman shift of the magnon mode. The coupling strength g is giant, achieving 120 GHz (0.5 meV), the largest value reported so far. Such a strong coupling leads to a large ratio of g to the resonance frequency (g/{\omega}) of 4.5%, and a value of 29 in cooperativity (g^2/{\gamma}_{ph}{\gamma}_{mag}). Experimental results are well reproduced by first-principle calculations, where the strong coupling is identified to arise from phonon-modulated anisotropic magnetic interactions due to spin-orbit coupling. These findings establish FePS3 as an ideal testbed for exploring hybridization-induced topological magnonics in two dimensions and the coherent control of spin and lattice degrees of freedom in the terahertz regime.

A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the bulk state has a very unusual nature, containing electrons and holes bound by Coulomb attraction (excitons) that spontaneously form in thermal equilibrium. On cooling from room temperature to 100 K the conductivity develops a V-shaped dependence on electrostatic doping, while the chemical potential develops a ~43 meV step at the neutral point. These features are much sharper than is possible in an independent-electron picture, but they can be largely accounted for by positing that some of the electrons and holes are paired in equilibrium. Our calculations from first principles show that the exciton binding energy is larger than 100 meV and the radius as small as 4 nm, explaining their formation at high temperature and doping levels. Below 100 K more strongly insulating behavior is seen, suggesting that a charge-ordered state forms. The observed absence of charge density waves in this state appears surprising within an excitonic insulator picture, but we show that it can be explained by the symmetries of the exciton wave function. Monolayer WTe2 therefore presents an exceptional combination of topological properties and strong correlations over a wide temperature range., Comment: Initial submission. Includes supplementary information. Revised version to appear in Nature Physics

The functional form of Coulomb interactions in the transition metal dichalcogenides and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent ferromagnetism. This paper presents measurements of key excitonic energy levels in MoSe2/WSe2 heterostructures. These measurements are obtained from resonance Raman experiments on specific Raman peaks only observed at excited states of the excitons. This data is used to validate a model of the Coulomb potential in these structures which predicts the exciton energies to within ~5 meV / 2.5%. This model is used to determine the effect of heterostructure formation on the single-particle band gaps of the layers and will have a wide applicability in designing the next generation of more complex transition metal dichalcogenide structures., Comment: 19 pages, 3 figures and an additional 14 pages, 7 figures of supplimentary info. Submitted to IOP 2D Materials

The properties of van der Waals (vdW) crystals and heterostructures depend sensitively on their layer stacking configuration. The twist angle and lattice mismatch between constituent vdW sheets have been shown to be crucial parameters influencing the strongly correlated and topological states of matter in moir\'e materials. Here, we demonstrate a new approach for controlling these emergent states by altering the stacking chirality of the moir\'e structure. We study twisted double bilayer graphene (tDBG) in an AB-BA stacking configuration (i.e., with the component Bernal bilayers rotated by nearly 60{\deg}) and observe topological and symmetry-broken states that are absent in AB-AB stacked tDBG. In particular, we observe an anomalous Hall effect (AHE) at filling factor {\nu} = 3 (i.e., 3 electrons per moir\'e cell), implying a correlated ground state that spontaneously breaks time-reversal symmetry. In addition, at fractional filling {\nu} = 7/2, a robust symmetry-broken Chern insulator (SBCI) state associated with translational symmetry breaking emerges upon applying a magnetic field, concomitant with an AHE at zero field. Our results motivate future experiments in which the stacking chirality is employed as an important new degree of freedom for controlling the strongly correlated and topological phase diagram of other moir\'e materials., Comment: 22 Pages, 16 Figures

Moir�� superlattices in van der Waals heterostructures are gaining increasing attention because they offer new opportunities to tailor and explore unique electronic phenomena when stacking 2D materials with small twist angles. Here, we reveal local surface potentials associated with stacking domains in twisted double bilayer graphene (TDBG) moir�� superlattices. Using a combination of both lateral Piezoresponse Force Microscopy (LPFM) and Scanning Kelvin Probe Microscopy (SKPM), we distinguish between Bernal (ABAB) and rhombohedral (ABCA) stacked graphene and directly correlate these stacking configurations with local surface potential. We find that the surface potential of the ABCA domains is ~15 mV higher (smaller work function) than that of the ABAB domains. First-principles calculations based on density functional theory further show that the different work functions between ABCA and ABAB domains arise from the stacking dependent electronic structure. We show that, while the moir�� superlattice visualized by LPFM can change with time, imaging the surface potential distribution via SKPM appears more stable, enabling the mapping of ABAB and ABCA domains without tip-sample contact-induced effects. Our results provide a new means to visualize and probe local domain stacking in moir�� superlattices along with its impact on electronic properties., 15 pages, 4 figures

A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest electric field-tunable correlated insulating (CI) states at all quarter fillings of the conduction band, accompanied by nearby states featuring signatures suggestive of superconductivity. Here, we report electrical transport measurements of tDBG in which we elucidate the fundamental role of spontaneous symmetry breaking within its correlated phase diagram. We observe abrupt resistivity drops upon lowering the temperature in the correlated metallic phases neighboring the CI states, along with associated nonlinear $I$-$V$ characteristics. Despite qualitative similarities to superconductivity, concomitant reversals in the sign of the Hall coefficient instead point to spontaneous symmetry breaking as the origin of the abrupt resistivity drops, while Joule heating appears to underlie the nonlinear transport. Our results suggest that similar mechanisms are likely relevant across a broader class of semiconducting flat band vdW heterostructures., Comment: 15 Pages, 15 Figures

Moir�� structures in van der Waals heterostructures lead to emergent phenomena including superconductivity in twisted bilayer graphene and optically accessible strongly-correlated electron states in transition metal dichalcogenide heterobilayers. Dual periodicity moir�� structures (DPMS) formed in layered structures with more than two layers have been shown to lead to ferromagnetism and multiple secondary Dirac points in TBG. Whilst in principle it is possible to obtain DPMS in bilayers there has not been clear experimental evidence of this yet. In this paper we present signatures of DPMS in a twisted MoSe$_2$/WSe$_2$ bilayer revealed by resonance Raman spectroscopy. We observed zone-folded acoustic and optical phonon modes with a wavevector twice of the moir�� wavevector, evidence of a dual periodicity moir�� heterostructure. These results simultaneously open up opportunities for new emergent phenomena and an optical method for characterising DPMS in a wide range of van der Waals heterostructures., 16 pages, 3 Figures, 1 Table

Magic-angle twisted bilayer graphene (TBG), with rotational misalignment close to 1.1$^\circ$, features isolated flat electronic bands that host a rich phase diagram of correlated insulating, superconducting, ferromagnetic, and topological phases. The origins of the correlated insulators and superconductivity, and the interplay between them, are particularly elusive. Both states have been previously observed only for angles within $\pm0.1^\circ$ from the magic-angle value and occur in adjacent or overlapping electron density ranges; nevertheless, it is still unclear how the two states are related. Beyond the twist angle and strain, the dependence of the TBG phase diagram on the alignment and thickness of insulating hexagonal boron nitride (hBN) used to encapsulate the graphene sheets indicates the importance of the microscopic dielectric environment. Here we show that adding an insulating tungsten-diselenide (WSe$_2$) monolayer between hBN and TBG stabilizes superconductivity at twist angles much smaller than the established magic-angle value. For the smallest angle of $\theta$ = 0.79$^\circ$, we still observe clear superconducting signatures, despite the complete absence of the correlated insulating states and vanishing gaps between the dispersive and flat bands. These observations demonstrate that, even though electron correlations may be important, superconductivity in TBG can exist even when TBG exhibits metallic behaviour across the whole range of electron density. Finite-magnetic-field measurements further reveal breaking of the four-fold spin-valley symmetry in the system, consistent with large spin-orbit coupling induced in TBG via proximity to WSe$_2$. Our results highlight the importance of symmetry breaking effects in stabilizing electronic states in TBG and open new avenues for engineering quantum phases in moir\'e systems., Comment: 12 pages, 4 figures; main text

We have synthesized unique colloidal nanoplatelets of the ferromagnetic two-dimensional (2D) van der Waals material CrI3 and have characterized these nanoplatelets structurally, magnetically, and by magnetic circular dichroism spectroscopy. The isolated CrI3 nanoplatelets have lateral dimensions of ~25 nm and ensemble thicknesses of only ~4 nm, corresponding to just a few CrI3 monolayers. Magnetic and magneto-optical measurements demonstrate robust 2D ferromagnetic ordering in these nanoplatelets with Curie temperatures similar to those observed in bulk CrI3, despite the strong spatial confinement. These data also show magnetization steps akin to those observed in micron-sized few-layer 2D sheets and associated with concerted spin-reversal of individual CrI3 layers within few-layer van der Waals stacks. Similar data have also been obtained for CrBr3 and anion-alloyed Cr(I1-xBrx)3 nanoplatelets. These results represent the first example of laterally confined 2D van der Waals ferromagnets of any composition. The demonstration of robust ferromagnetism at nanometer lateral dimensions opens new doors for miniaturization in spintronics devices based on van der Waals ferromagnets., Comment: 20 pages, 6 figures, plus supporting information of 7 pages, 5 figures. Submitted

The formation of interfacial moir�� patterns from angular and/or lattice mismatch has become a powerful approach to engineer a range of quantum phenomena in van der Waals heterostructures. For long-lived and valley-polarized interlayer excitons in transition-metal dichalcogenide (TMDC) heterobilayers, signatures of quantum confinement by the moir�� landscape have been reported in recent experimental studies. Such moir�� confinement has offered the exciting possibility to tailor new excitonic systems, such as ordered arrays of zero-dimensional (0D) quantum emitters and their coupling into topological superlattices. A remarkable nature of the moir�� potential is its dramatic response to strain, where a small uniaxial strain can tune the array of quantum-dot-like 0D traps into parallel stripes of one-dimensional (1D) quantum wires. Here, we present direct evidence for the 1D moir�� potentials from real space imaging and the corresponding 1D moir�� excitons from photoluminescence (PL) emission in MoSe2/WSe2 heterobilayers. Whereas the 0D moir�� excitons display quantum emitter-like sharp PL peaks with circular polarization, the PL emission from 1D moir�� excitons has linear polarization and two orders of magnitude higher intensity. The results presented here establish strain engineering as a powerful new method to tailor moir�� potentials as well as their optical and electronic responses on demand.

The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body spectral reconstructions. Here we show that submicron angle-resolved photoemission (micro-ARPES) applied to two-dimensional (2D) van der Waals heterostructures affords this ability. In graphene devices, we observe a shift of the chemical potential by 0.6 eV across the Dirac point as a gate voltage is applied. In several 2D semiconductors we see the conduction band edge appear as electrons accumulate, establishing its energy and momentum, and observe significant band-gap renormalization at low densities. We also show that micro-ARPES and optical spectroscopy can be applied to a single device, allowing rigorous study of the relationship between gate-controlled electronic and excitonic properties., Comment: Original manuscript with 9 pages with 4 figures in main text, 5 pages with 4 figures in supplement. Substantially edited manuscript accepted at Nature

A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, helping to explain why polar metals are very rare. Screening also excludes external electric fields, apparently ruling out the possibility of polarity reversal and thus ferroelectric switching. In principle, however, a thin enough polar metal could be penetrated by an electric field sufficiently to be switched. Here we show that the layered topological semimetal WTe2 provides the first embodiment of this principle. Although monolayer WTe2 is centrosymmetric and thus nonpolar, the stacked bulk structure is polar. We find that two- or three-layer WTe2 exhibits a spontaneous out-of-plane electric polarization which can be switched using gate electrodes. We directly detect and quantify the polarization using graphene as an electric field sensor. Moreover, the polarization states can be differentiated by conductivity, and the carrier density can be varied to modify the properties. The critical temperature is above 350 K, and even when WTe2 is sandwiched in graphene it retains its switching capability at room temperature, demonstrating a robustness suitable for applications in combination with other two-dimensional materials.

The creation of moir�� patterns in crystalline solids is a powerful approach to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In 2D materials, a moir�� pattern with a superlattice potential can form by vertically stacking two layered materials with a twist and/or finite lattice constant difference. This unique approach has led to emergent electronic phenomena, including the fractal quantum Hall effect, tunable Mott insulators, and unconventional superconductivity. Furthermore, theory predicts intriguing effects on optical excitations by a moir�� potential in 2D valley semiconductors, but these signatures have yet to be experimentally detected. Here, we report experimental evidence of interlayer valley excitons trapped in a moir�� potential in MoSe$_2$/WSe$_2$ heterobilayers. At low temperatures, we observe photoluminescence near the free interlayer exciton energy but with over 100 times narrower linewidths. The emitter g-factors are homogeneous across the same sample and only take two values, -15.9 and 6.7, in samples with twisting angles near 60�� and 0��, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley pairing configurations. At a twist angle near 20��, the emitters become two orders of magnitude dimmer, but remarkably, they possess the same g-factor as the heterobilayer near 60��. This is consistent with the Umklapp recombination of interlayer excitons near the commensurate 21.8�� twist angle. The emitters exhibit strong circular polarization, which implies the preservation of three-fold rotation symmetry by the trapping potential. Together with the power and excitation energy dependence, all evidence points to their origin as interlayer excitons trapped in a smooth moir�� potential with inherited valley-contrasting physics.

Continuous-wave mode-locked femtosecond 2 um solid-state laser with a c-cut Tm:CaYAlO4 as gain medium was experimentally demonstrated. The mode locked laser generated stable pulses with average output power as high as 531 mW, pulse duration of 496 fs, and repetition rate of 97 MHz at 1975 nm. The research results show that Tm:CaYAlO4 is an excellent gain medium for femtosecond pulse generation at 2um wavelength.

CrCl3 is a layered insulator that undergoes a crystallographic phase transition below room temperature and orders antiferromagnetically at low temperature. Weak van der Waals bonding between the layers and ferromagnetic in-plane magnetic order make it a promising material for obtaining atomically thin magnets and creating van der Waals heterostructures. In this work we have grown crystals of CrCl3, revisited the structural and thermodynamic properties of the bulk material, and explored mechanical exfoliation of the crystals. We find two distinct anomalies in the heat capacity at 14 and 17 K confirming that the magnetic order develops in two stages on cooling, with ferromagnetic correlations forming before long range antiferromagnetic order develops between them. This scenario is supported by magnetization data. A magnetic phase diagram is constructed from the heat capacity and magnetization results. We also find an anomaly in the magnetic susceptibility at the crystallographic phase transition, indicating some coupling between the magnetism and the lattice. First principles calculations accounting for van der Waals interactions also indicate spin-lattice coupling, and find multiple nearly degenerate crystallographic and magnetic structures consistent with the experimental observations. Finally, we demonstrate that monolayer and few-layer CrCl3 specimens can be produced from the bulk crystals by exfoliation, providing a path for the study of heterostructures and magnetism in ultrathin crystals down to the monolayer limit.

In this work, we consider the output tracking and disturbance rejection problems of a mono-tubular heat exchanger process and a novel finite-dimensional output feedback regulator is developed. In the proposed output feedback regulator design, measurements available for the regulator do not belong to the set of controlled outputs. In other words, design emphasizes that other than controlled output is used as input signal to the regulator. The proposed output feedback regulator with only plant measurement ym(t) can realize the exosystem state estimation, disturbance rejection and reference signal tracking, simultaneously. Finally, the results are demonstrated by a mono-tubular heat exchanger process with specific parameters via the computer simulation.

Van der Waals (vdW) heterostructures formed by 2D atomic crystals provide a powerful approach towards designer condensed matter systems. Incommensurate heterobilayers with small twisting and/or lattice mismatch lead to the interesting concept of Moir�� superlattice, where the atomic registry is locally indistinguishable from commensurate bilayers but has local-to-local variation over long range. Here we show that such Moir�� superlattice can lead to periodic modulation of local topological order in vdW heterobilayers formed by two massive Dirac materials. By tuning the vdW heterojunction from normal to the inverted type-II regime via an interlayer bias, the commensurate heterobilayer can become a topological insulator (TI), depending on the interlayer hybridization controlled by the atomic registry between the vdW layers. This results in mosaic pattern of TI regions and normal insulator (NI) regions in Moir�� superlattices, where topologically protected helical modes exist at the TI/NI phase boundaries. By using symmetry based k.p and tight-binding models, we predict that this topological phenomenon can be present in inverted transition metal dichalcogenides heterobilayers. Our work points to a new means of realizing programmable and electrically switchable topological superstructures from 2D arrays of TI nano-dots to 1D arrays of TI nano-stripes., 17 pages,5 figures

Heterostructures comprising different monolayer semiconductors provide a new system for fundamental science and device technologies, such as in the emerging field of valleytronics. Here, we realize valley-specific interlayer excitons in monolayer WSe2-MoSe2 vertical heterostructures. We create interlayer exciton spin-valley polarization by circularly polarized optical pumping and determine a valley lifetime of 40 nanoseconds. This long-lived polarization enables the visualization of the expansion of a valley-polarized exciton cloud over several microns. The spatial pattern of the polarization evolves into a ring with increasing exciton density, a manifestation of valley exciton exchange interactions. Our work lays a foundation for quantum optoelectronics and valleytronics based on interlayer excitons in van der Waals heterostructures., Comment: This is the original submitted version. The final version is to appear in Science

Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these systems is currently poorly understood. Here, we investigate exciton relaxation in monolayer MoSe2 using polarization-resolved coherent nonlinear optical spectroscopy with high spectral resolution. We report strikingly narrow population pulsation resonances with two different characteristic linewidths of 1 ��eV and, (PRL, in press)

Let $��_s=R(K_3,K_s)-R(K_3,K_{s-1})$, where $R(G,H)$ is the Ramsey number of graphs $G$ and $H$ defined as the smallest $n$ such that any edge coloring of $K_n$ with two colors contains $G$ in the first color or $H$ in the second color. In 1980, Erd��s and S��s posed some questions about the growth of $��_s$. The best known concrete bounds on $��_s$ are $3 \le ��_s \le s$, and they have not improved since the stating of the problem. In this paper we present some constructions, which imply in particular that $R(K_3,K_s) \ge R(K_3,K_{s-1}-e) + 4$. This does not improve the lower bound of 3 on $��_s$, but we still consider it a step towards to understanding its growth. We discuss some related questions and state two conjectures involving $��_s$, including the following: for some constant $d$ and all $s$ it holds that $��_s - ��_{s+1} \leq d$. We also prove that if the latter is true, then $\lim_{s \rightarrow \infty} ��_s/s=0$., 10 pages

Joint transmission is a kind of cooperative transmission technology, which converts other cell interference into signal. In this letter, for single-user joint transmission, we propose that a power pool can be created in order to increase the system sum-rate or lower the power consumption. Then, we investigate the sum-rate maximization problem under this framework. Since it is impossible that subchannel gains for the two base stations are identical, we can obtain a much more concise structure and reduce variables to the half of original problem. And that the closed-form water-filling solution is unique and global optimum, because it is a convex optimization problem. Compared to the power allocation without pooling, the performance gain is verified by simulation., Comment: This paper has not finished

Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer., Comment: 14 pages manuscript + 12 pages supplementary information