8 results on '"Amrouch, Hussam"'
Search Results
2. Software-Managed Read and Write Wear-Leveling for Non-Volatile Main Memory.
- Author
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HAKERT, CHRISTIAN, KUAN-HSUN CHEN, SCHIRMEIER, HORST, BAUER, LARS, GENSSLER, PAUL R., VON DER BRÜGGEN, GEORG, AMROUCH, HUSSAM, HENKEL, JÖRG, and JIAN-JIA CHEN
- Subjects
MEMORY ,CELLULAR aging - Abstract
In-memory wear-leveling has become an important research field for emerging non-volatile main memories over the past years. Many approaches in the literature perform wear-leveling by making use of special hardware. Since most non-volatile memories only wear out from write accesses, the proposed approaches in the literature also usually try to spread write accesses widely over the entire memory space. Some non-volatile memories, however, also wear out from read accesses, because every read causes a consecutive write access. Software-based solutions only operate from the application or kernel level, where read and write accesses are realized with different instructions and semantics. Therefore different mechanisms are required to handle reads and writes on the software level. First, we design a method to approximate read and write accesses to the memory to allow aging aware coarse-grained wear-leveling in the absence of special hardware, providing the age information. Second, we provide specific solutions to resolve access hot-spots within the compiled program code (text segment) and on the application stack. In our evaluation, we estimate the cell age by counting the total amount of accesses per cell. The results show that employing all our methods improves the memory lifetime by up to a factor of 955×. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF
3. Performance, Power and Cooling Trade-Offs with NCFET-based Many-Cores.
- Author
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Rapp, Martin, Salamin, Sami, Amrouch, Hussam, Pahwa, Girish, Chauhan, Yogesh, and Henkel, Jorg
- Subjects
FIELD-effect transistors ,FERROELECTRIC materials ,DIELECTRICS ,TRANSISTORS ,CRITICAL path analysis - Abstract
Negative Capacitance Field-Effect Transistor (NCFET) is an emerging technology that incorporates a ferroelectric layer within the transistor gate stack to overcome the fundamental limit of sub-threshold swing in transistors. Even though physics-based NCFET models have been recently proposed, system-level NCFET models do not exist and research is still in its infancy. In this work, we are the first to investigate the impact of NCFET on performance, energy and cooling costs in many-core processors. Our proposed methodology starts from accurate physics models all the way up to the system level, where the performance and power of a many-core are widely affected. Our new methodology and system-level models allow, for the first time, the exploration of the novel trade-offs between performance gains and power losses that NCFET now offers to system-level designers. We demonstrate that an optimal ferroelectric thickness does exist. In addition, we reveal that current state-of-the-art power management techniques fail when NCFET (with a thick ferroelectric layer) comes into play. [ABSTRACT FROM AUTHOR]
- Published
- 2019
- Full Text
- View/download PDF
4. Aging-Constrained Performance Optimization for Multi Cores.
- Author
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Khdr, Heba, Amrouch, Hussam, and Henkel, Jörg
- Subjects
ELECTRIC circuits ,VOLTAGE ,TEMPERATURE ,ELECTRIC potential ,MOTHERBOARDS - Abstract
Circuit aging has become a dire design concern and hence it is considered a primary design constraint. Current practice to cope with this problem is to apply (too) conservative means. In contrast, we introduce a far less restrictive approach by efficiently exploring a fundamentally new aging-aware design space comprising temperature (T), aging degradation (ΔV
th ) and supply voltage (Vdd ). On that basis, we present a tailored multi core resource management (with # threads and v/f levels as parameters etc.) that aims to maximize performance (optimization goal) under aging constraint(s). We demonstrate that our approach is the first to fully exploit the performance/aging trade-off within this new design space but without the restrictions inherent to current state of the art. As a result, we achieve 43% increase in performance while maintaining the same level of circuit aging when compared to the best technique reported yet. [ABSTRACT FROM AUTHOR]- Published
- 2018
- Full Text
- View/download PDF
5. Towards Aging-Induced Approximations.
- Author
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Amrouch, Hussam, Khaleghi, Behnam, Gerstlauer, Andreas, and Henkel, Jörg
- Subjects
IMAGE processing ,IMAGING systems ,SIGNAL processing ,TRANSISTORS ,SEMICONDUCTORS - Abstract
In recent technology nodes, wide guardbands are needed to overcome reliability degradations due to aging. Such guardbands manifest as reduced efficiency and performance. Existing approaches to reduce guardbands trade off aging impact for increased circuit overhead. By contrast, the goal of this work is to completely remove guardbands through exploring, for the first time, application of approximate computing principles in the context of aging. As a result of naively narrowing or removing guardbands, timing errors start to appear as transistors age. We demonstrate that even in circuits that may tolerate errors, aging can be catastrophic due to unacceptable quality loss. Furthermore, quantifying such aging-induced quality loss necessitates expensive (often infeasible) gate-level simulations of the complete design. We show how nondeterministic aginginduced timing errors can be converted into deterministic and controlled approximations instead. We first translate the required guardband over time into an equivalent reduction in precision for individual RTL components. We then demonstrate how, based on pre-characterization of RTL components, we can quantify aging-induced approximation at the whole microarchitecture level without the need for further gate-level simulations. Results show that a 3 bit reduction in precision is sufficient to sustain 10 years of operation under worst-case aging in the context of an image processing circuit. This corresponds to an acceptable PSNR reduction of merely 8 dB, while at the same time increasing area and energy efficiency by 13%. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF
6. Designing Guardbands for Instantaneous Aging Effects.
- Author
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van Santen, Victor M., Amrouch, Hussam, Martin-Martinez, Javier, Nafria, Montserrat, and Henkel, Jörg
- Subjects
CMOS integrated circuits ,COST effectiveness ,METAL oxide semiconductor field-effect transistors ,THRESHOLD voltage ,STRAINS & stresses (Mechanics) - Abstract
Bias Temperature Instability (BTI) is one of the key causes of reliability degradations of nano-CMOS circuits. While the long-term impact of BTI has been studied since years, the short-term implications of BTI on circuits are unexplored. In fact, in physics short-term BTI effects, i.e. instantaneous (i.e. sub μs) frequency dependent processes, have been recently reported. In order to design circuits with guardbands that are safe for long-term and instantaneous effects, new aging models are required. We are presenting the first approach that in fact considers both long-term as well as instantaneous BTI effects. It can be employed for complex circuits at the micro-architecture level. Designing guardbands based upon our physical BTI model reduces the guardbands by 41% and thus allows for the development of more cost-effective yet reliable designs. We also revisit existing state-of-the-art aging mitigation techniques to investigate how they can be properly adapted to additionally account for instantaneous aging effects. Along with our BTI model this further reduces the guardbands by up to 59%. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF
7. Improving Mobile Gaming Performance through Cooperative CPU-GPU Thermal Management.
- Author
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Prakash, Alok, Amrouch, Hussam, Shafique, Muhammad, Mitra, Tulika, and Henkel, Jörg
- Subjects
MOBILE games ,GRAPHICS processing units ,CENTRAL processing units ,THERMAL management (Electronic packaging) ,MULTIPROCESSORS ,NETWORKS on a chip - Abstract
State-of-the-art thermal management techniques independently throttle the frequencies of high-performance multi-core CPU and powerful graphics processing units (GPU) on heterogeneous multiprocessor system-on-chips deployed in latest mobile devices. For graphics-intensive gaming applications, this approach is inadequate because both the CPU and the GPU contribute towards the overall application performance (frames per second or FPS) as well as the on-chip temperature. The lack of coordination between CPU and GPU induces recurrent frequency throttling to maintain on-chip temperature below the permissible limit. This leads to significantly degraded application performance and large variation in temperature over time. We propose a control-theory based dynamic thermal management technique that cooperatively scales CPU and GPU frequencies to meet the thermal constraint while achieving high performance for mobile gaming. Experimental results with six popular Android games on a commercial mobile platform show an average 19% performance improvement and over 90% reduction in temperature variance compared to the original Linux approach. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF
8. Reliability-Aware Design to Suppress Aging.
- Author
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Amrouch, Hussam, Khaleghi, Behnam, Gerstlauer, Andreas, and Henkel, Jörg
- Subjects
ELECTRIC circuits ,THRESHOLD voltage ,TRANSISTORS ,ELECTRIC capacity ,LOGIC circuit synthesis (Electronic design) - Abstract
Due to aging, circuit reliability has become extraordinary challenging. Reliability-aware circuit design flows do virtually not exist and even research is in its infancy. In this paper, we propose to bring aging awareness to EDA tool flows based on so-called degradation-aware cell libraries. These libraries include detailed delay information of gates/cells under the impact that aging has on both threshold voltage (V
th ) and carrier mobility (μ) of transistors. This is unlike state of the art which considers Vth only. We show how ignoring μ degradation leads to underestimating guard-bands by 19% on average. Our investigation revealed that the impact of aging is strongly dependent on the operating conditions of gates (i.e. input signal slew and output load capacitance), and not solely on the duty cycle of transistors. Neglecting this fact results in employing insufficient guard-bands and thus not sustaining reliability during lifetime. We demonstrate that degradation-aware libraries and tool flows are indispensable for not only accurately estimating guardbands, but also efficiently containing them. By considering aging degradations during logic synthesis, significantly more resilient circuits can be obtained. We further quantify the impact of aging on the degradation of image processing circuits. This goes far beyond investigating aging with respect to path delays solely. We show that in a standard design without any guardbanding, aging leads to unacceptable image quality after just one year. By contrast, if the synthesis tool is provided with the degradation-aware cell library, high image quality is sustained for 10 years (even under worst-case aging and without a guardband). Hence, using our approach, aging can be effectively suppressed. [ABSTRACT FROM AUTHOR]- Published
- 2016
- Full Text
- View/download PDF
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