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For investigating the effects of gradient energy coefficients on the void-matrix interface thickness during Czochralski silicon single crystal, an established phase field model and the corresponding program code were used to simulate the evolution process of a single void. Based on the given criterion of interface thickness, sixteen simulating cases were performed to study the related influence laws. The results show that the void-matrix interface thickness is influenced by both of the gradient energy coefficients of composition and chemical ordering, and the increases of gradient energy coefficients contribute to the enlargement of interface thickness.