24 results on '"Heyns M"'
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2. Seedless Templated Growth of Hetero-Nanostructures for Novel Microelectronics Devices.
3. Molecular Beam Epitaxy study of a common a -GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures.
4. Physical characterization of HfO2deposited on Ge substrates by MOCVD.
5. (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices.
6. Physical characterization of HfO2 deposited on Ge substrates by MOCVD.
7. High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies.
8. Scalability of MOCVD-deposited Hafnium Oxide.
9. Effect of Al-content and Post Deposition Annealing on the Electrical Properties of Ultra-thin HfAlxOy Layers.
10. Thermal Stability of High k Layers.
11. Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon.
12. ALD HfO2 surface preparation study.
13. Modeling Soft Breakdown of Ultra-Thin Gate Oxide Layers.
14. Modeling Soft Breakdown of Ultra-Thin Gate Oxide Layers.
15. Influence of pre and post process conditions on the composition of thin Si3N4 thin Alms (3 nm) studied by XPS and TOFSIMS.
16. Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown.
17. Modelling the influence of pad bending on the planarization performance during CMP.
18. Silicon Surface Metal Contamination Measurements using Grazing-Emission XRF Spectrometry.
19. Effect of Cl in Gate Oxidation.
20. Influence of Boron Diffusion on Ultra-Thin Oxides.
21. Effect of Cl in Gate Oxidation.
22. Surface Characterisation of Si After HF Treatments and its Influence on the Dielectric Breakdown of Thermal Oxides.
23. Cleaning Procedures for UHV Cluster-tool MOS Fabrication.
24. The Role of Electron and Hole Traps in the Degradation and Breakdown of thermally grown SiO2 Layers.
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