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Field effect transistors have shown promising performance as terahertz (THz) detectors over the past few decades. Recently, a quantum phenomenon, the in-plane photoelectric effect, was discovered as a novel detection mechanism in gated two-dimensional electron gases (2DEGs), and devices based on this effect, photoelectric tunable-step (PETS) THz detectors, have been proposed as sensitive THz detectors. Here, we demonstrate a PETS THz detector based on GaAs/AlGaAs heterojunction using a dipole antenna. We investigate the dependence of the in-plane photoelectric effect on parameters including the dimensions and the operating temperature of the device. Two figures of merit within the 2DEG, the maximum electric field and the radiation-induced ac-potential difference, are simulated to determine the optimal design of the PETS detector antenna. We identify the optimal antenna gap size, metal thickness, and 2DEG depth, and demonstrate the first PETS detector with a symmetric dipole antenna, which shows high-speed detection of 1.9 THz radiation with a strong photoresponse. Our findings deepen the understanding of the in-plane photoelectric effect and provide a universal guidance for the design of future PETS THz detectors.

Optical neural networks (ONNs) are promising hardware platforms for next-generation neuromorphic computing due to their high parallelism, low latency, and low energy consumption. However, previous integrated photonic tensor cores (PTCs) consume numerous single-operand optical modulators for signal and weight encoding, leading to large area costs and high propagation loss to implement large tensor operations. This work proposes a scalable and efficient optical dot-product engine based on customized multi-operand photonic devices, namely multi-operand optical neuron (MOON). We experimentally demonstrate the utility of a MOON using a multi-operand-Mach–Zehnder-interferometer (MOMZI) in image recognition tasks. Specifically, our MOMZI-based ONN achieves a measured accuracy of 85.89 % in the street view house number (SVHN) recognition dataset with 4-bit voltage control precision. Furthermore, our performance analysis reveals that a 128 × 128 MOMZI-based PTCs outperform their counterparts based on single-operand MZIs by one to two order-of-magnitudes in propagation loss, optical delay, and total device footprint, with comparable matrix expressivity.

The areca nut is one of the most commonly consumed psychoactive substances worldwide, with an estimated consumption by approximately 10% of the world’s population, especially in some regions of South Asia, East Africa, and the tropical Pacific. Arecoline, the major areca nut alkaloid, has been classified as carcinogenic to humans as it adversely affects various organs, including the brain, heart, lungs, gastrointestinal tract, and reproductive organs. Earlier studies have established a link between areca nut chewing and cardiac arrhythmias, and yet research pertaining to the mechanisms underlying cardiotoxicity caused by arecoline is still preliminary. The main purpose of this study is to test the hypothesis that arecoline causes cardiac fibrosis through transforming growth factor-β (TGF-β)/Smad-mediated signaling pathways. Male Wistar rats were injected intraperitoneally with low (5 mg/kg/day) or high (50 mg/kg/day) doses of arecoline for 3 weeks. Results from Masson’s trichrome staining indicated that arecoline could induce cardiac fibrosis through collagen accumulation. Western blot analysis showed that TGF-β and p-Smad2/3 protein expression levels were markedly higher in the arecoline-injected rat hearts than in those of the control rats. Moreover, arecoline upregulated other fibrotic-related proteins, including SP1-mediated connective tissue growth factor expression. Tissue-type plasminogen activator and its inhibitor, plasminogen activator inhibitor, and matrix metalloproteinase (MMP) 9 were upregulated, and the inhibitor of MMP9 was downregulated. This study provides novel insight into the molecular mechanisms underlying arecoline-induced cardiac fibrosis. Taken together, the areca nut is a harmful substance, and the detrimental effects of arecoline on the heart are similar to that caused by oral submucous fibrosis.

Thanks to the unique molecular fingerprints in the mid-infrared spectral region, absorption spectroscopy in this regime has attracted widespread attention in recent years. Contrary to commercially available infrared spectrometers, which are limited by being bulky and cost-intensive, laboratory-on-chip infrared spectrometers can offer sensor advancements including raw sensing performance in addition to utilization such as enhanced portability. Several platforms have been proposed in the past for on-chip ethanol detection. However, selective sensing with high sensitivity at room temperature has remained a challenge. Here, we experimentally demonstrate an on-chip ethyl alcohol sensor based on a holey photonic crystal waveguide on silicon on insulator-based photonics sensing platform offering an enhanced photoabsorption thus improving sensitivity. This is achieved by designing and engineering an optical slow-light mode with a high group-index of ng = 73 and a strong localization of the modal power in analyte, enabled by the photonic crystal waveguide structure. This approach includes a codesign paradigm that uniquely features an increased effective path length traversed by the guided wave through the to-be-sensed gas analyte. This PIC-based lab-on-chip sensor is exemplary, spectrally designed to operate at the center wavelength of 3.4 μm to match the peak absorbance for ethanol. However, the slow-light enhancement concept is universal offering to cover a wide design-window and spectral ranges towards sensing a plurality of gas species. Using the holey photonic crystal waveguide, we demonstrate the capability of achieving parts per billion levels of gas detection precision. High sensitivity combined with tailorable spectral range along with a compact form-factor enables a new class of portable photonic sensor platforms when integrated with quantum cascade laser and detectors.

Vertical-cavity surface-emitting lasers (VCSELs) have emerged as a vital approach for realizing energy-efficient and high-speed optical interconnects in the data centers and supercomputers. Indeed, VCSELs are the most suitable mass production lasers in terms of cost-effectiveness and reliability. However, there are still key challenges that prevent achieving modulation speeds beyond 30s GHz. Here, we propose a novel VCSEL design of a hexagonal transverse-coupled-cavity adiabatically coupled through a central cavity. Following this scheme, we show a prototype demonstrating a 3-dB roll-off modulation bandwidth of 45 GHz, which is five times greater than a conventional VCSEL fabricated on the same epiwafer structure. This design harnesses the Vernier effect to increase the laser’s aperture and therefore is capable of maintaining single-mode operation of the laser for high injection currents, hence extending the dynamic roll-off point and offering increases power output. Simultaneously, extending both the laser modulation speed and output power for this heavily deployed class of lasers opens up new opportunities and fields of use ranging from data-comm to sensing, automotive, and photonic artificial intelligence systems.

Integrated photonics offers attractive solutions for realizing combinational logic for high-performance computing. The integrated photonic chips can be further optimized using multiplexing techniques such as wavelength-division multiplexing (WDM). In this paper, we propose a WDM-based electronic–photonic switching network (EPSN) to realize the functions of the binary decoder and the multiplexer, which are fundamental elements in microprocessors for data transportation and processing. We experimentally demonstrate its practicality by implementing a 3–8 (three inputs, eight outputs) switching network operating at 20 Gb/s. Detailed performance analysis and performance enhancement techniques are also given in this paper.

Electro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has not only enabled miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. The millimeter to centimeter footprint of many foundry-ready electro-optic modulators, however, limits density scaling of on-chip photonic systems. To address these limitations, here we experimentally demonstrate a coupling-enhanced electro-absorption modulator by heterogeneously integrating a novel dual-gated indium-tin-oxide phase-shifting tunable absorber placed at a silicon directional coupler region. This concept allows utilizing the normally parasitic Kramers-Kronig relations here in an synergistic way resulting in a strong modulation depth to insertion loss ratio of about 1. Our experimental modulator shows a 2 dB extinction ratio for a just 4 μm short device at 4 V bias. Since no optical resonances are deployed, this device shows spectrally broadband operation as demonstrated here across the entire C-band. In conclusion, we demonstrate a modulator utilizing strong index change from both real and imaginary parts of active material enabling compact and high-performing modulators using semiconductor near-foundry materials.

In atomic multi-level systems, adiabatic elimination (AE) is a method used to minimize complicity of the system by eliminating irrelevant and strongly coupled levels by detuning them from one another. Such a three-level system, for instance, can be mapped onto physically in the form of a three-waveguide system. Actively detuning the coupling strength between the respective waveguide modes allows modulating light to propagate through the device, as proposed here. The outer waveguides act as an effective two-photonic-mode system similar to ground and excited states of a three-level atomic system, while the center waveguide is partially plasmonic. In AE regime, the amplitude of the middle waveguide oscillates much faster when compared to the outer waveguides leading to a vanishing field build up. As a result, the plasmonic intermediate waveguide becomes a “dark state,” hence nearly zero decibel insertion loss is expected with modulation depth (extinction ratio) exceeding 25 dB. Here, the modulation mechanism relies on switching this waveguide system from a critical coupling regime to AE condition via electrostatically tuning the free-carrier concentration and hence the optical index of a thin indium thin oxide (ITO) layer resides in the plasmonic center waveguide. This alters the effective coupling length and the phase mismatching condition thus modulating in each of its outer waveguides. Our results also promise a power consumption as low as 49.74aJ/bit. Besides, we expected a modulation speed of 160 GHz reaching to millimeter wave range applications. Such anticipated performance is a direct result of both the unity-strong tunability of the plasmonic optical mode in conjunction with utilizing ultra-sensitive modal coupling between the critically coupled and the AE regimes. When taken together, this new class of modulators paves the way for next generation both for energy and speed conscience optical short-reach communication such as those found in interconnects.