1. Study on excimer laser irradiation for controlled dehydrogenation and crystallization of boron doped hydrogenated amorphous/nanocrystalline silicon multilayers
- Author
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Pedro Alpuim, Maria F. Cerqueira, J.C. Conde, Stefano Chiussi, F. Gontad, Sergej Filonovich, and Universidade do Minho
- Subjects
Materials science ,Silicon ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,Dopant Activation ,01 natural sciences ,law.invention ,symbols.namesake ,Excimer laser annealing ,law ,0103 physical sciences ,Materials Chemistry ,Dehydrogenation ,Crystallization ,010302 applied physics ,Science & Technology ,Thermal decomposition ,Metals and Alloys ,Nanocrystalline silicon ,Boron doped nanocrystalline silicon ,Surfaces and Interfaces ,021001 nanoscience & nanotechnology ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,chemistry ,Hydrogenated amorphous silicon ,symbols ,0210 nano-technology ,Raman spectroscopy - Abstract
We report on the excimer laser annealing (ELA) induced temperature gradients, allowing controlled crystal-lization and dehydrogenation of boron-doped a-Si:H/nc-Si:H multilayers. Depth of the dehydrogenation and crystallization process has been studied numerically and experimentally, showing that temperatures below the monohydride decomposition can be used and that significant changes of the doping profile can be avoided. Calculation of temperature profiles has been achieved through numerical modeling of the heat conduction differential equation. Increase in the amount of nano-crystals, but not in their size, has been demonstrated by Raman spectroscopy. Effective dehydrogenation and shape of the boron profile have been studied by time of flight secondary ion mass spectroscopy. The relatively low temperature threshold for dehydrogenation, below the monohydride decomposition temperature, has been attributed to both, the large hydrogen content of the original films and the partial crystallization during the ELA process. The results of this study show that UV-laser irradiation is an effective tool to improve crystallinity and dopant activation in p+-nc-Si:H films without damaging the substrate., Fundação para a Ciência e Tecnologia (FCT), CRUP Spanish–Portuguese bilateral agreement HP2006- 0122, Spanish national and regional research contracts: MAT-2000-1050, MAT-2003-04908MAT-2011-24077, PGIDIT03-04908, PGIDT-01PX130301PN, XUGA- Infra 93, XUGA-Infra 94-58, SB93-A0742819D and INFRA 99-PR 405a-46 more...
- Published
- 2013