Search

The paper deals with the conception and feasibility of the device structure based on the optimized PIN-(In, Ga)N homojunction solar cells. A new and efficient model combining the most realistic ones considering the impacts of band gap narrowing, collection efficiency, Shockley-Read-Hall recombination, and interface polarization is proposed to examine the solar cells' performance numerically. The functioning processes of n-In0.42Ga0.58N/i-(In, Ga)N/p-In0.42Ga0.58N solar cells at room temperature were investigated by calculating their characteristics for the AM1.5D, AM1.5G, and AM0 American Society for Testing and Materials experimental data. Our results show that the indium content, thickness, and defect density of the intrinsic layer strongly influence the characteristics of the InGaN solar cells. As the In-mole fraction increases, Voc, FF and efficiency diminish to reach an independent regime for high In-content. A higher-quality 2μm−In0.43Ga0.57N for 1014cm−3 defect concentration can exhibit as high an efficiency as ≅11.3%, dropping to ≅4.12% for 1016cm−3 one.

This computational investigation delves into the electronic and optical attributes of InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement potentials, coupled with the influence of a nonresonant intense laser field (ILF). The theoretical framework incorporates higher-order anharmonic terms, specifically quartic and sextic terms. The solutions to the Schrödinger equation have been computed employing the finite element method and the effective mass theory. Moreover, linear and third-order nonlinear optical absorption coefficients are derived via a density matrix expansion. Our analysis reveals the feasibility of manipulating electronic and optical properties by adjusting confinement potential parameters, system attributes, and laser field intensity. In addition, the ILF induces remarkable modifications, characterized by reduced resonance peak amplitudes and a blue shift in absorption coefficients. Intriguingly, regardless of potential harmonicity, the impact of incident electromagnetic intensity is notably more pronounced in the absence of the ILF. These findings hold significant promise for advancing theoretical predictions, providing valuable insights into the intricate interplay between confinement potentials, laser fields, and their effects on electronic and optical behaviors within nanostructures.

Intraconduction subband related optical absorption coefficient in non-polar m-plane symmetric linked (In,Ga)N/GaN double parabolic quantum wells is theoretically investigated in this study taking into consideration the presence of a single dopant hydrogen-like donor impurity moving down the growth axis. Calculations for a finite parabolic potential are performed using the impurity position, structural dimension, indium fraction, and temperature as adjusting variables. Using the finite difference approach, the Schrodinger equation is numerically solved to obtain the eigenvalues and their corresponding eigenvectors in the effective-mass approximation. The results reveal that increasing the coupling barrier and/or well concentration causes a considerable blueshift in the position of the absorption peak. Temperature, size change, and/or an impurity moving from the left band edge to the middle of the structure all cause a significant redshift in the absorption spectra. It has also been established that resonant optical absorption characteristics can be controlled by a careful choice of temperature and structure size, opening up new possibilities for high-performance infrared optical devices, optical modulators, solar cells, and laser applications.