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Fatigue failure in ferroelectrics has been intensively investigated in the past few decades. Most of the mechanisms discussed for ferroelectric fatigue have been built on the “hypothesis of variation in charged defects”, but these are rarely evidenced by experimental observation. Here, using a combination of complex impedance spectra techniques, piezoresponse force microscopy and first-principles theory, we examine the microscopic evolution and redistribution of charged defects during the electrical cycling in BiFeO 3 thin films. The dynamic formation and melting behaviors of oxygen vacancy ( V O ) order are identified during the fatigue process. It reveals that the isolated V O tends to self-order along grain boundaries to form a planar-aligned structure, which blocks the domain reversals. Upon further electrical cycling, migration of V O within vacancy clusters is accommodated with a lower energy barrier (∼0.2 eV) and facilitates the formation of a nearby-electrode layer incorporated with highly concentrated V O . The interplay between the macroscopic fatigue and microscopic evolution of charged defects clearly demonstrates the role of ordered V O clusters in the fatigue failure of BiFeO 3 thin films. [ABSTRACT FROM AUTHOR]

Abstract: Optical, magnetocapacitance and dielectric properties of different composite films of BiFeO3–poly(vinylidene-fluoride) (with concentration of BiFeO3; 70, 60, 50 and 40wt%) are reported here for first time. The grain size was observed to be ∼50nm by using atomic force microscopy. A peak in refractive index appears at ∼455nm, which is found to be shifting towards lower wavelengths, while simultaneously the value of the optical energy band gap is found to increase with an increase in the concentration of PVDF in the composite. It was observed that PVDF, which works as matrix, increases the magnetocapacitance. The magnetocapacitance (MC) of BFO60 (BiFeO3; 60wt%) was found higher than Nb doped BiFeO3, which may be useful for device applications. [Copyright &y& Elsevier]

The control of polarization rotation (PR) is a key issue of applying undoped zinc oxide (ZnO) as information storage devices. A systematic study of ZnO thin films by conducting piezoresponse force microscopy (PFM) technique on samples with different electrodes, film thicknesses, and deposition oxygen partial pressures, P O 2 allows disclosing the possible factors those affecting the PR behavior. The results clearly indicate that higher work function conductive material, such as Pt, is a promising candidature as the top electrode and bottom electrode to ensure the PR occur and maintain in ZnO films. From the effects of film thickness study, PR behavior can be observed in film downscaled to 15 nm. However, in order to avoid current leakage and maintain the rotated polarization state, thicker film with about 240 nm is preferred. In addition, in the film deposited with a low P O 2 (>5 × 10−6 Torr), more atomic point defects such as oxygen vacancy may lead the sample into a large leakage current and deteriorate the PR behavior. Hence, by this systematic study, it is proved that the PR behavior of undoped ZnO thin films can be optimized with proper deposition parameters. Image 1 • Possible factors affecting the PR behavior are studied comprehensively. • Pt is a promising electrode candidature for PR behavior comparing with Au and ITO. • Unambiguous PR behavior is found in film with a thickness reduced to 15 nm. • P O 2 below 5 × 10−6 Torr might hinder the PR behavior. [ABSTRACT FROM AUTHOR]