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Abstract: In this report, we present a study on the exploitation of nanostructure-thin film interfaces. Here, the objective is to utilize such interfaces for developing nanostructures for advanced sensing devices, while using state-of-the-art microelectronic technology that enables batch production. In this context, growth of ZnO nanostructures on the GaN/AlGaN heterostructure layers was studied. A fabrication process, based on a hydrothermal growth method, was used for preparing the interfaces of nanostructured thin film. Samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) and obtained results suggested near epitaxial quality of the hetero-interface. Field-effect transistors (FETs) based on ZnO nanorods/GaN heterostructures were fabricated and tested in a controlled gas environment. Thus, it was demonstrated that nanostructures could be exploited in unconventional ways by employing them in scalable and batch-producible conventional semiconductor devices. [Copyright &y& Elsevier]

Abstract: A method for fabricating suspended gallium nitride (GaN) structures for microelectromechanical systems (MEMS) without direct etching of GaN is demonstrated. The process combines a selective area growth of GaN-on-patterned-silicon-substrate (GPS) and a subsequent sacrificial wet etching of the silicon under the GaN structures. Both anisotropic and isotropic wet etching techniques are used to carry out the sacrificial etching. The experimental results show that the GPS–MEMS technique can be used to batch-fabricate various GaN-based MEMS devices with common silicon micromachining equipments. [Copyright &y& Elsevier]