1. Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing.
- Author
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Jin, Hyun Soo, Cho, Young Jin, Seok, Tae Jun, Kim, Dae Hyun, Kim, Dae Woong, Lee, Sang-Moon, Park, Jong-Bong, Yun, Dong-Jin, Kim, Seong Keun, Hwang, Cheol Seong, and Park, Tae Joo
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INTERFACES (Physical sciences) , *ATOMIC layer deposition , *MERCURY compounds , *METALLIC thin films , *PASSIVATION , *ANNEALING of metals - Abstract
Surface sulfur (S) passivation on InP substrate was performed using a dry process – rapid thermal annealing under H 2 S atmosphere for III–V compound-semiconductor-based devices. The electrical properties of metal-oxide-semiconductor capacitor fabricated with atomic-layer-deposited HfO 2 film as a gate insulator were examined, and were compared with the similar devices with S passivation using a wet process – (NH 4 ) 2 S solution treatment. The H 2 S annealing provided solid S passivation with the strong resistance against oxidation compared with the (NH 4 ) 2 S solution treatment, although S profiles at the interface of HfO 2 /InP were similar. The decrease in electrical thickness of the gate insulator by S passivation was similar for both methods. However, the H 2 S annealing was more effective to suppress interface state density near the valence band edge, because thermal energy during the annealing resulted in stronger S bonding and InP surface reconstruction. Moreover, the flatband voltage shift by constant voltage stress was lower for the device with H 2 S annealing. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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