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Glass with the composition of 50SiO 2 -25Na 2 O-10ZnO-10BaO-5Al 2 O 3 (in mol%) was used as the matrix for the growth of PbSe QDs. The viscosity-temperature relations of the glass were obtained through Vogel-Tammann-Fulcher equation. PbSe QDs were precipitated in this silicate glasses with the heat-treatment temperatures ( T H ) ranging from 490 to 540 °C for fixed duration of 10 h, corresponding to the glass-viscosity 10 11.2 –10 8.9 Pa·s. Meanwhile, the absorption peaks from PbSe QDs shifted from 872 nm to 2134 nm, and the PL peaks shifted from 1104 nm to 2185 nm. To study the PbSe QDs growth kinetics, the glasses were heat treated at 500, 520 and 540 °C for 1–20 h. Changes in diameter of PbSe QDs exhibited strong time dependencies (i.e. D ~ t 0.17 , T H = 520 °C), while the time dependencies were much smaller than that predicted by the classical Lifshitz-Slyozov-Wagner (LSW) theory (D ~ t 1/3 ) and the higher T H leads to the smaller growth exponent. [ABSTRACT FROM AUTHOR]

Lead selenide quantum dots (QDs) were precipitated in lithium-aluminum-silicate glass-ceramics. Their optical properties and the crystallization behavior of both glass host and PbSe QDs were investigated. When the glasses heat-treated at 480–520 °C for 10 h, the absorption bands from PbSe QDs were tuned from 1051 to 2016 nm, and the PL bands from 1165 to 2095 nm. Upon the dwelling time 10 h, the crystallization of glass host required relatively higher heating temperature (∼490 °C) than the formation of PbSe QDs (∼480 °C). With the heat treatment at 490 °C for10 h, the PLQY from PbSe QDs in glass-ceramics reached ∼38.7 %. Phase separation induced the glass crystallization and had a significant effect on the distribution of PbSe QDs. To study the growth kinetics of PbSe QDs, the glasses were heat treated at 480 °C and 500 °C for various durations. The average diameters of PbSe QDs (D) showed exponential relationship to the growth time (t), described by the equation D(t)∼ t x. In rapid growth stage, the growth exponents x is ∼ 0.56 at 480 °C and ∼ 0.47 at 500 °C, and then decrease to ∼ 0.13 and ∼ 0.10, respectively. The formation of a large number of LiAlO 2 crystals in glass hindered the diffusion of semiconductor ions, which is the main reason for the decreasing in the growth rate of PbSe QDs. [ABSTRACT FROM AUTHOR]