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CdS/Cd 1−x Zn x S sandwich-structured quantum dots (QDs) were precipitated in silicate glasses with high quantum efficiency up to 53%. The QDs were composed by a CdS core with a Cd 1−x Zn x S shell of about 1–3 nm in thickness through heat-treatment at 550 °C for 10 h. With the increased heat-treatment temperature, the intensity ratio between the intrinsic emission and the defects emission increased and the Stokes shift decreased from 84 to 4 meV, which was caused by both the increased size and passivated surface defects of the QDs. [ABSTRACT FROM AUTHOR]

Abstract: Optical properties of PbS quantum dots (QDs) precipitated inside the oxide glass matrix were investigated. Photoluminescence (PL) from the PbS QDs showed peak wavelengths located at 1170–1680nm with widths of 150–550nm. Radii of QDs in glasses were 2.3–4.7nm depending upon the thermal treatment. Peak wavelengths of PL bands shifted as much as 70nm as the temperatures and excitation irradiances increased. Calculated effective local temperatures indicated that these shifts of PL spectra were associated with local heating induced by the temperatures and laser beam. [Copyright &y& Elsevier]

Abstract: CdSe quantum dots (QDs) were precipitated in silicate glasses under various durations and temperatures of heat-treatment. Absorption and photoluminescence (PL) spectra of the QDs showed the quantum confinement effect from CdSe QDs. When the glass was heat-treated for 10h, estimated average QD sizes increased from 5.2nm when the glass was heat-treated at 490°C and to 6.9nm when it was treated at 500°C. When the glass was heat-treated at 480°C, estimated average QD sizes were 4.9nm after 20h and 5.3nm after 30h. The PL peak position was independent of the excitation wavelengths; this result indicates that the size distribution of CdSe QDs was narrow. [ABSTRACT FROM AUTHOR]

Lead chalcogenide quantum dots have particular optoelectronic properties induced by the quantum confinement effects and have promising potentials towards applications in infrared spectral range. Modulation of the optoelectronic properties of lead chalcogenide quantum dots is mainly based on the thermal treatment. In this work, precipitation and optical properties of alloyed PbSe x S 1-x quantum dots in glasses are investigated. Composition, size, absorption, and photoluminescence properties of PbSe x S 1-x quantum dots are modulated by chalcogen elements in glasses and thermal treatment. By adjusting the concentration of ZnSe and ZnS in the glasses, average diameters of the PbSe x S 1-x quantum dots are tuned in the range of 8.1–16.1 nm, their absorption peak wavelengths are tuned in the range of 724–2497 nm, and photoluminescence bands are tuned in the range of 1016–2165 nm with full width at half maximum in the range of 167–517 nm. Fraction of Se in the PbSe x S 1-x quantum dots precipitated in glasses is dependent on the concentrations of ZnSe and ZnS in the glass and heat-treatment temperature. Increase in concentration of S in the glasses results in the reduction of relative fraction of Se in the PbSe x S 1-x quantum dots formed in glasses. More importantly, high heat-treatment temperature promotes the enrichment of Se in PbSe x S 1-x quantum dots, and Se fraction in PbSe x S 1-x quantum dots increases from 0.69 to 0.89, from 0.53 to 0.85, from 0.47 to 0.79, and from 0.45 to 0.76 for those precipitated in glasses with ZnSe/(ZnSe+ZnS) molar ratios of 0.545, 0.375, 0.286, and 0.231, respectively. Increase in ZnSe/(ZnSe+ZnS) molar ratios in glasses also leads to reduction in diameter of PbSe x S 1-x quantum dots formed in glasses. These alloyed PbSe x S 1-x quantum dots also exhibit improved photoluminescence quantum yields and enhanced resistance to thermal quenching of photoluminescence. [Display omitted] [ABSTRACT FROM AUTHOR]