1. Resistive switching of two-dimensional NiAl-layered double hydroxides and memory logical functions.
- Author
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Sun, Yanmei, Yuan, Qi, Dong, Yan, Wang, Yufei, He, Nian, and Wen, Dianzhong
- Subjects
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LAYERED double hydroxides , *SPIN coating , *COATING processes , *MEMORY , *HYDROXIDES , *STRENGTH of materials , *INDIUM gallium zinc oxide - Abstract
Two-dimensional NiAl layered double hydroxides (LDHs) were synthesized by urea hydrolysis method. Considering its unique layered structure and high-speed carrier transfer channel, NiAl-LDHs were applied to the active layer of memristor through spin coating process. It is found that the Al/NiAl-LDHs/Al memristor exhibits unipolar resistance switching characteristics, which resistive switching mechanism is attributed to formation and fusing of conductive filaments controlled by oxygen vacancies. Based on this Al/NiAl-LDHs/Al memristor, a D -type latch was constructed. A memtransistor with Si/SiO 2 /graphene oxide (GO)/Al/NiAl-LDHs/Al structure was built by connecting Al/NiAl-LDHs/Al memristor in series on the drain electrode of GO transistor. The memtransistor exhibits excellent gate controllability and resistive switching characteristics. Combined with its characteristics, we used the memtransistor to build a D -trigger and verify its memory logical function. The result shows the great potential of layered bimetallic hydroxide materials in the field of resistance switching memory and memory computing. • The unipolar resistive switching characteristics of NiAl-LDHs memristor were investigated. • A D -type latch was constructed using NiAl-LDHs memristor, which logical function was verified. • A memtransistor was built by connecting Al/NiAl-LDHs/Al memristor in series on the drain electrode of GO transistor. • A D -trigger was constructed by the memtransistor, which exhibits excellent memory logical function. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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