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Abstract: Absorption and emission spectral properties of GdVO4 single crystal doped with Ho3+ ions were investigated at room temperature. Polarized absorption cross section is calculated in the range of 400–2200nm. Results were analyzed and parameters were calculated based on Judd-Ofelt theory, the emission spectrum shows that the emission intensity around the wavelength of 546nm associated with transition 5S2 → 5I8 is much stronger than other bands in the observed range and potentially enable the green light output around this emission band in this crystal. [Copyright &y& Elsevier]

The Czochralski crystal growth of 50 at.% Yb:YAG single crystal was reported. The absorption spectrum, emission spectrum and fluorescence lifetime of Yb:YAG crystal were measured at room temperature. The spectroscopic parameters of nominal 50 at.% Yb:YAG crystal were compared with that of Yb:YAG crystal with low doping level. The results indicate that Yb:YAG crystals with high doping level are potential candidates used for compact, efficient thin chip lasers. [Copyright &y& Elsevier]

Abstract: Gd2SiO5 (GSO) single crystal codoped with Yb3+ and Er3+ (Abbr. as Er:Yb:GSO) was successfully grown by the Czochralski (CZ) method for the first time and the spectral characteristics were investigated. The absorption and fluorescence spectra were measured. The emission lifetime of the 4I13/2–Er-level was measured to be 5.84ms and the emission cross-section at 1529nm was calculated to be 1.03×10−20 cm2. The results indicate that Er:Yb:GSO is a potential laser material at ∼1.55μm wavelength region. [Copyright &y& Elsevier]