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Abstract: Pt, Pd, and Pt–Pd alloy underlayers were used to deposit c-axis oriented barium ferrite (BaM) thin films by a facing target sputtering system. All of the BaM thin films grown on these three underlayers show c-axis orientation normal to the film plane. But the grain size of BaM layer is strongly manipulated by the underlayer grain size. It is found that Pt–Pd alloy underlayer is effective to achieve c-axis oriented barium ferrite films with small grain size. [Copyright &y& Elsevier]

Abstract: TiN thin film is prepared by DC reactive sputtering in Ar+N2 atmosphere and its suitability as underlayer and overlayer for TbFeCo perpendicular recording media as well as its effect on the magnetic properties of the latter have been studied. Only 5nm TiN overlayer and 20nm under layer can successfully protect the TbFeCo film from oxidation. Initially the coercivity is increased sharply from about 2 to 6kOe for an increase of underlayer thickness to 60nm then the increasing rate of coercivity becomes very slow. The saturation magnetization remains almost constant with the underlayer thickness. The remanent squareness ratio remains constant at 1.0 with the underlayer thickness up to 60nm then decreases. [Copyright &y& Elsevier]

Abstract: Strontium ferrite (SrM) thin films on Au nano-dots were deposited on single-crystal sapphire with (00 l) orientation (Al2O3 (00 l)), single crystal MgO with (111) orientation (MgO (111)) and Corning glass by employing dc magnetron sputtering system. In order to improve the crystalline orientation for Au nano-dots, an attempt to use the single crystal as the substrate has been carried out. The effects of the substrates and underlayer on grain orientation, magnetic properties, and microstructure of SrM thin films were studied. The SrM grows with its c-axis oriented perpendicularly to the film. The maximum of coercivity and remanent squareness ratio in perpendicular direction for single crystal Al2O3 (00 l) substrate is 3.0kOe and 0.51, respectively. It is found that the magnetic interaction between SrM grains deposited on Au nano-dots is less than that for the continuous film. [Copyright &y& Elsevier]

Abstract: Strontium ferrite (SrM) thin films deposited on thermally oxidized silicon wafer (SiO2/Si) and single crystal sapphire with (00 l) orientation (Al2O3(00 l)) substrate using Pt underlayer were prepared by DC magnetron sputtering system. It was found that the intensity of (111) line for Pt and that of (00 l) diffraction line for SrM increases with increasing substrate temperature, Tu . The c-axis dispersion angle, Δθ 50, of SrM(008) depends on that of Pt underlayer. Both dispersion angle of Pt(111) and SrM(008) decrease with increasing temperature. It was observed that the saturation magnetization of SrM/Pt deposited on SiO2/Si is higher than that of Al2O3 substrate. The coercivity and remanent squareness ratio in perpendicular direction are higher than that in in-plane direction. The maximum of coercivity in perpendicular direction of SrM/Pt films deposited on single crystal Al2O3 is about 4.2kOe. [Copyright &y& Elsevier]