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Abstract: Metal-insulator-semiconductor capacitors were fabricated with sputtered ZnO and atomic layer deposited HfO2 as the semiconductor and gate dielectric layers, respectively. From the capacitance–voltage measurements, it was confirmed that pre-deposition annealing of the sputtered ZnO layer at 300°C in air greatly decreased the interfacial trap density (∼2×1012 cm−2 eV−1). X-ray photoelectron spectroscopy showed a decrease in the OH bonds adsorbed on the ZnO surface after pre-deposition annealing, which improved the interface property. A very small capacitance equivalent thickness of 1.3nm was achieved, which decreased the operation voltage (<5V) of the device significantly. [Copyright &y& Elsevier]

Abstract: The improved structural and electrical properties of tin-oxide films produced by using ultralow-pressure sputtering (ULPS) method are reported. The Hall mobility of the film (~13 cm2/V s) deposited using ULPS was about 1.5 times higher than that of the film (~8 cm2/V s) sputtered using a pressure of 4.0×10−1 Pa. As the sputtering pressure was decreased, the film was transformed from an amorphous structure to a nano-crystalline one and gained a stoichiometric SnO2 composition. These changes in the film structure sufficiently decreased the carrier concentration to facilitate application to thin film transistors. [Copyright &y& Elsevier]

To fabricate lateral-field excitation (LFE)-mode solid mounted resonator (SMR)-type film bulk acoustic resonators (FBARs), piezoelectric ZnO layers were deposited in an RF magnetron sputtering system. Control of the crystallinity, microstructure and electric properties of the piezoelectric layers was essential for fabricating high-quality LFE-mode SMR-type FBARs. In the appropriate deposition condition for FBAR devices, ZnO thin films with highly c-axis-preferred orientation (XRD rocking curve, σ=2.17°), high resistivity of 106 Ω cm and surface roughness of 10.6 A˚ were deposited. Optimal substrate rotation was especially important for improvement of the c-axis-preferred orientation of ZnO films. Plasma properties such as the electron temperature, plasma density and saturated ion current were also analyzed for optimal ZnO deposition conditions using a Langmuir double-probe system. The resonator, for which the active piezoelectric area was 200×200 μm2, consisted of 1.25-μm-thick ZnO film and a 110-nm Au electrode. Its series and parallel resonance frequencies appeared at 1.68 and 1.71 GHz, respectively, and the quality factor was 201.4±7.4. [Copyright &y& Elsevier]