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Due to the exceptional potential to retard the charge recombination, semiconductor-based heterojunctions as photocatalysts have attracted extensive attention. Herein, nickel(II) 5,10,15,20-tetraphenyl-21H,23H-porphyrin (NiTPP) and ZnIn 2 S 4 (ZIS) floriated microspheres are used to construct a novel inorganic-organic heterojunction (NiTPP/ZIS). Compared with the NiTPP and ZIS, the resultant NiTPP/ZIS exhibits enhanced optical absorption, charge separation and photoelectrochemical behavior. Further investigations demonstrate that a type II heterojunction mechanism proceeds in the NiTPP/ZIS heterojunction to boost the charge separation via the Ni-S highway formed between the NiTPP and ZIS components. No need of additional cocatalyst, the NiTPP/ZIS heterojunction with an optimal mass ratio delivers a superior apparent quantum yield of 64.0% at 400 nm and a remarkable H 2 evolution activity of 2305 μmol h−1 under visible light (λ ≥ 400 nm) irradiation, 10 and 256 times higher than that of the ZIS and NiTPP alone, respectively. This work presents a new concept for constructing inorganic-organic heterojunctions for high-performance artificial photosynthesis systems. [Display omitted] • A novel NiTPP/ZIS inorganic-organic hybrid material is synthesized via reflux method. • Ni-S channel between the NiTPP and ZIS components acts as highway for charge transfer. • A type II heterojunction mechanism is promoted via the Ni-S charge transfer channel. • Efficient charge separation causes superior apparent quantum yield of 64.0% at 400 nm. • Achieved 10 times higher H 2 yield than ZIS irradiated by visible light without cocatalyst. [ABSTRACT FROM AUTHOR]

Developing highly efficient heterojunction photodetector, especially ternary heterojunctions of vertical structure, is a promising strategy to enhance the migration of photo-generated electron for exploit potentialities of optoelectronic devices. In this study, we successfully deposited two-dimensional layered SnSe 2 NSs and SnS 2 NSs vertically on TiO 2 NTs arrays using chemical vapor deposition (CVD), constructing a novel ternary SnS 2 /SnSe 2 /H–TiO 2 heterojunction. The morphology, structure, and composition of the samples were analyzed, and highly sensitive ultraviolet/visible light photodetectors were fabricated. Photocurrent measurements demonstrated that the prepared SnS 2 /SnSe 2 /H–TiO 2 ternary heterojunction exhibited superior light detection capability at different wavelengths (370 nm, 450 nm, 520 nm) compared to the pristine H–TiO 2 and its binary heterojunctions (SnS 2 /H–TiO 2 , SnSe 2 /H–TiO 2). Under a bias voltage of 1 V and 370 nm illumination, it achieved a high photocurrent of 7.45 mA cm−2, a switch ratio of 7.924, as well as high responsivity (9.39 A/W), high EQE (3.15 × 103 %), and large detectivity (9.53 × 1010 Jones). The excellent performance of the SnS 2 /SnSe 2 /H–TiO 2 ternary heterojunction reveals its enormous potential in the development of wide-band, high-performance photodetectors. [Display omitted] • A ternary SnS 2 /SnSe 2 /H–TiO 2 heterojunction with vertical structure was prepared by in-situ growth of high-quality SnSe 2 and SnS 2 nanosheet arrays on the surface of TiO 2 nanotubes using a two-step CVD method. • The SnS 2 /SnSe 2 /H–TiO 2 heterostructure is directly fabricated into a photodetector. • The photodetector presents outstanding photoresponse activity at different wavelengths with a high photocurrent of 7.45 mA cm−2, high responsivity (9.39 A/W), high EQE (3.15 × 103 %), and a large detectivity (9.53 × 1010 Jones) under 370 nm illumination. • Compared to binary heterostructures (SnS 2 /H–TiO 2 , SnSe 2 /H–TiO 2), the ternary SnS 2 /SnSe 2 /H–TiO 2 detector exhibits a wider photoresponse range, higher optoelectronic performance, and better stability, demonstrating outstanding overall performance. [ABSTRACT FROM AUTHOR]

• Fluoroalkylthiol substituted 2,3-dihydrobenzofurans (DHB) was prepared in high to excellent yield under the irradiation of visible light. Various functional groups were tolerated. Fluorescence quenching experiment indicated that both oxidative and reductive quenching cycles occurred. And the reductive quenching was dominant. Difunctionalization of alkenes represent a convenient way to complex molecular structure. Herein, visible light-induced intramolecular carbodi(tri)fluoromethylthiolation of alkenes was reported. C C and C-S were formed in the procedure. Various fluoroalkylthiol substituted 2,3-dihydrobenzofurans (DHB) was prepared. Aryldiazonium salts derived from o-allyloxy anilines were used as precursors of aryl radicals. The following cyclization occurred, and the resulting alkyl radicals were trapped by shelf-stable reagent PhSO 2 SR f (R f = SCF 2 H, SCF 3). The direct difluoromethylthiolation on arenes was not observed. A variety of atoms and functional groups were tolerated. [Display omitted] A visible light-induced intramolecular carbodi(tri)fluoromethylthiolation of alkenes was reported, through which C C and C-S were formed with good functional group tolerance and yields. [ABSTRACT FROM AUTHOR]