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Abstract: In this work we present an improvement on the normalized plane-wave method, for use in studies on carrier confinement in quantum dots. This alternative approach has two main advantages: it noticeably increases the accuracy of the calculations by removing the barrier surrounding the dot under study and it dramatically decreases the computation times. As we will demonstrate, this new approach is obtained from a simple analysis of the calculations. We use this algorithm to study hole confinement in spherical Si quantum dots, and from it we propose a correction to the Effective Mass approach to be used in Si quantum dot simulations. With this technique we obtained results comparable to those calculated by the Tight-Binding method but using less computational resources. [Copyright &y& Elsevier]

Abstract: In this work we present a theoretical study of the quantization in a p-type FD/SOI device with confinement in the main crystalline directions. To carry out this study, we solved the Schrödinger effective mass equation, taking into consideration non-parabolicity, warping and degeneracy of the silicon valence band. We investigated the relative populations of the lowest subbands, and proposed a set of subbands for the efficient analysis of hole dynamics. We also evaluated the phonon and interface roughness scattering rates to provide a qualitative picture of how confinement direction influences those rates. [Copyright &y& Elsevier]