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• A compact LDMOS-DDSCR for dual-direction HV ESD protection is proposed to achieve low trigger voltage and high failure current. • The failure current of new proposed LDMOS-DDSCR raises from 2.00A to 4.02A. • The new proposed LDMOS-DDSCR shows good temperature reliability. The LDMOS-based silicon controlled rectifier (SCR) is commonly used in high voltage (HV) electrostatic discharge (ESD) protection due to its great current handling capability per area and HV protection ability. In this paper, an improved LDMOS-based dual direction SCR (LDMOS-DDSCR) device is designed by replacing floating N+ region with electrically-connected P+, N+ and P+ regions to enhance its ESD robustness, which is verified in a 0.5-μm (1p2m) 18 V HV CDMOS process. The internal mechanism of the proposed device is analyzed using two-dimension (2D) TCAD simulations, and the ESD performance is characterized by means of transmission line pulse (TLP) and very-fast TLP (VFTLP) measurements. Compared with the conventional LDMOS-DDSCR, the failure current of the compact LDMOS-DDSCR raises from 2.00 A to 4.02 A (increased by 101%), and the trigger voltage reduces from 44.28 V to 39.76 V, without sacrificing layout area. Furthermore, the TLP I-V curves of the proposed LDMOS-DDSCR are measured at different temperatures ranging from 25 °C to 125 °C, which proves its reliability and show potential use in the applications of high voltage integrated circuits. [ABSTRACT FROM AUTHOR]

The reliability of power devices is attracting more and more attention, especially in the extreme radiation environment. The laterally diffused metal–oxide–semiconductor (LDMOS) has been widely used in high voltage integrated circuits. In this paper, the radiation effects of LDMOS transistors are extensively investigated through three-dimensional (3D) TCAD simulations, including Total-Ionizing Dose (TID), Single-Event Effect (SEE) and Transient Dose Rate Effect (TDRE). Firstly, the mechanism of TID effect on the LDMOS is revealed in consideration of temperature variations. Secondly, the single-event effect of the LDMOS is studied with different incident positions, linear energy transfer (LET) values, incident lengths, incident angles, bias conditions and temperatures. Besides, the combined effect of total-ionizing dose and single-event burnout is characterized. Finally, transient response of the LDMOS under transient γ radiation is also studied comprehensively. Therefore, it gives an insight into the physical mechanisms and response characteristics of complex radiation effects, which can provide guidance for radiation-hardened by design and application of the LDMOS devices. • The mechanism of TID effect on the LDMOS is revealed in consideration of temperature variations. • The most sensitive region to SEB of the LDMOS locates at the boundary between the channel and drift region. • Except for the off bias, the ON bias and subthreshold bias are also sensitive to SEB effect. • The physical mechanisms of the combined effects of SEB and TID are revealed. • Transient response of the LDMOS under transient gamma radiation is studied. [ABSTRACT FROM AUTHOR]

Responsitivity is an important figure of merit for photodetectors. Here we demonstrated a simple yet efficient way to enhance the responsitivity of methylammonium lead iodide (MAPbI 3)-based photodetectors by utilizing organic semiconductors (OSCs) to form MAPbI 3 /OSC bilayer structures. These bilayer photodetectors are fabricated with a facile and low-cost spin-coating method, yet the responsitivity can be more than one order of magnitude higher than that of pristine MAPbI 3 photodetectors. More importantly, the physics behind the enhancement of responsitivity was analyzed and revealed by inspecting the physical processes in terms of light absorption, exciton dissociation and charge transport. The results indicate that the responsitivity enhancement is mainly attributable to the more efficient exciton dissociation and hole transport processes in the bilayer photodetectors. Image 1 • In this work, we demonstated that the responsitivity of organic-inorganic hybrid lead halide perovskites (MAPbI 3) based photodetectors can be dramatically enhanced by forming MAPbI 3 /organic semiconductor (OSC) bilayer films, and the physics behind the responsitivity enhancement was clarified. • Considering that there are so many organic semiconductors with different optical and electrical properties, it may open up opportunities to explore different combinations of perovskites and organic semiconductors for achieving high-performance photodetectors, or finely tune the performance of photodetectors according to our needs. • This work thus can be important to the development of application of pervoskite/OSC bilayer photodectors. [ABSTRACT FROM AUTHOR]