Search

In this paper, we proposed a novel recess-free insulated-gate High Electron Mobility Transistor (HEMT) with p-SnO 2 gate realizing high threshold voltage (V TH) over 2 V. p-SnO 2 is used as the gate material instead of traditional Ni/Au gate. Owing to the high work function of the p-SnO 2 (both wide bandgap and large electron affinity (χ)), the 2DEG channel under the gate region can be deeply depleted realizing high V TH even with thick AlGaN barrier over 10 nm, which also ensures high channel mobility. An analytical model is presented and verified by experimentally calibrated TCAD simulation. Results show that for a 25 nm Al 2 O 3 , V TH of the proposed HEMT reaches 3.1 V with p-SnO 2 doping N A = 5 × 1019 cm−3, which is ∼2.5 V higher than that of a conventional MIS-HEMT with the same parameters. Moreover, the specific on-resistance (R on,sp) of the proposed HEMT is only 1.31 mΩ cm2, which is reduced by 54.8% compared with that of a recessed-gate MIS-HEMT with the same V TH of ∼2.2 V. [ABSTRACT FROM AUTHOR]