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Abstract: In this paper, a three-phase current-fed dc/dc converter with an active clamp is introduced, and a new three-phase three-leg high frequency transformer is proposed for the converter. The three-phase dc/dc converter transfers power through transformer leakage inductances in the discontinuous current mode; a single common active clamp branch is employed for zero-voltage switching (ZVS) in all active switches. Further, the converter''s three-phase power configuration increases power transfer, and it reduces the rms current per phase, thus reduces conduction losses. Moreover, a delta–delta connection on the three-phase transformer provides parallel current paths and reduces conduction losses in the transformer windings. A three-phase transformer can be constructed by connecting three discrete single-phase transformers, but this process results in a higher volume and higher material costs. Therefore, a new three-phase three-leg high frequency transformer is designed with three discrete cores integrated into a single transformer core. The proposed transformer is analyzed according to the several operating modes of the converter, and its design rules are determined. Experimental results are obtained on a 500-W prototype unit; the design is fully verified and analyzed. [Copyright &y& Elsevier]

Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films. [ABSTRACT FROM AUTHOR]