1. Effect of wire diameter on structure and electrical properties of (Al + Al2O3)-sheathed MgB2 with Nb barrier.
- Author
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Srivastava, N., Mehrotra, S., Sharma, D., Shalini, Búran, M., Hušek, I., Goswami, A., Kováč, P., and Santra, S.
- Subjects
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WIRE , *INTERFACIAL reactions , *GIBBS' free energy , *ALUMINUM oxide , *MELTING points , *CRITICAL currents - Abstract
Effect of wire diameter and annealing on the properties of internal magnesium diffusion (IMD)-processed MgB 2 composite wires is studied by establishing a correlation with the characteristics of the interfacial reaction zones developed at Mg − B and barrier (Nb) – sheath (Al + Al 2 O 3) interfaces. The MgB 2 superconductor phase grows at the Mg − B interface along with the B-rich MgB 4 phase. Formation of MgB 2 prior to MgB 4 is anticipated owing to a relatively lower Gibbs free energy at annealing temperatures studied. An intermetallic NbAl 3 phase has developed at the barrier – sheath interface whose thickness decreases with an increase in the wire diameter. Development of NbAl 3 further provides mechanical reinforcement and aids at yielding a dense superconductor phase. Resistivity – voltage characteristics of wire indicates the formation of MgB 2 through a huge drop in resistivity values across the core of the wire. An annealing temperature of 645 °C near the melting point of pure Mg (650 °C) and annealing time of 120 min results in highest critical current of the MgB 2 wire. Annealing time beyond 120 min has shown an impediment to the flow current due to crack propagation possibly because of accumulation of stresses within the developed superconductor phase due to grain growth. A significantly greater resistance for the wire with the smallest diameter is attributed to the formation of a thicker NbAl 3 phase. However, highest engineering current density has also been attained by the wire with the smallest diameter annealed at 645 °C for 60 min. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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