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Your search keyword '"Debusschere, I."' showing total 14 results
Start Over Author "Debusschere, I." Publisher elsevier b.v.
14 results on '"Debusschere, I."'

9. Development of silicon micropattern (pixel) detectors

Author

Delpierre, P., Beusch, W., Bosisio, L., Boutonnet, C., Campbell, M., Chesi, E., Clemens, J.C., Cohen-Solal, M., Debusschere, I., Dierickx, B., Enz, C., Focardi, E., Forti, F., Glaser, M., Heijne, E., Hermans, L., Hurst, R., Karar, A., Krummenacher, F., Jaeger, J.J., Jarron, P., Lemeilleur, F., Nava, F., Neyer, C., Ottaviani, G., Potheau, R., Quercigh, E., Redaelli, N., Rossi, L., Sauvage, D., Tonelli, G., Vanstraelen, G., Vegni, G., Viertel, G., and Waisbard, J.

Published
1992
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10. Development of silicon micropattern pixel detectors

Author

Heijne, E.H.M., Antinori, F., Beker, H., Batignani, G., Beusch, W., Bonvicini, V., Bosisio, L., Boutonnet, C., Burger, P., Campbell, M., Cantoni, P., Catanesi, M.G., Chesi, E., Claeys, C., Clemens, J.C., Cohen Solal, M., Darbo, G., Da Via, C., Debusschere, I., Delpierre, P., Di Bari, D., Di Liberto, S., Dierickx, B., Enz, C.C., Focardi, E., Forti, F., Gally, Y., Glaser, M., Gys, T., Habrard, M.C., Hallewell, G., Hermans, L., Heuser, J., Hurst, R., Inzani, P., Jæger, J.J., Jarron, P., Karttaavi, T., Kersten, S., Krummenacher, F., Leitner, R., Lemeilleur, F., Lenti, V., Letheren, M., Lokajicek, M., Loukas, D., Macdermott, M., Maggi, G., Manzari, V., Martinengo, P., Meddeler, G., Meddi, F., Mekkaoui, A., Menetrey, A., Middelkamp, P., Morando, M., Munns, A., Musico, P., Nava, P., Navach, F., Neyer, C., Pellegrini, F., Pengg, F., Perego, R., Pindo, M., Pospisil, S., Potheau, R., Quercigh, E., Redaelli, N., Ridky, J., Rossi, L., Sauvage, D., Segato, G., Simone, S., Sopko, B., Stefanini, G., Strakos, V., Tempesta, P., Tonelli, G., Vegni, G., Verweij, H., Viertel, G.M., Vrba, V., and Waisbard, J.

Published
1994
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13. Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation

Author

Suhane, A., Cacciato, A., Richard, O., Arreghini, A., Adelmann, C., Swerts, J., Rothschild, O., Van den bosch, G., Breuil, L., Bender, H., Jurczak, M., Debusschere, I., Kittl, J.A., De Meyer, K., and Van Houdt, J.

Subjects
*RARE earth oxides, *ALUMINATES, *ELECTRIC charge, *QUANTUM tunneling, *FLASH memory, *LANTHANUM, *PERFORMANCE, *SILICON
Abstract

Abstract: In this paper, we provide evaluation of memory stacks with La, Lu and Gd aluminates as charge trapping materials. Critical integration issues are pointed out, particularly the mixing of these materials with adjacent layers. It is found that, in order to control the mixing of the aluminates with the tunnel oxide, nitride (for Gd) or nitride+oxide (for La and Lu) buffer layers have to be used. The nitride buffer layer, however, mixes with the tunnel oxide during stack fabrication. This results in very good erase and endurance performance, which is attributed to enhanced hole tunneling from the Si substrate, but degrades the retention performance. [Copyright &y& Elsevier]

Published
2011
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14. Optimization of HfSiON using a design of experiment (DOE) approach on 0.45V V t Ni-FUSI CMOS transistors

Author

Rothschild, A., Mitsuhashi, R., Kerner, C., Shi, X., Everaert, J.L., Date, L., Conard, T., Richard, O., Vrancken, C., Verbeeck, R., Veloso, A., Lauwers, A., De Potter, M., Debusschere, I., Jurczak, M., Niwa, M., Absil, P., and Biesemans, S.

Subjects
*EXPERIMENTAL design, *METAL oxide semiconductors, *RESPONSE surfaces (Statistics), *COMPLEMENTARY metal oxide semiconductors
Abstract

Abstract: We report for the first time that the optimization of a HfSiON process on Ni-FUSI devices is best tackled using a design of experiments (DOE [Myers RH, Montgomery. Response surface methodology. New York, DC: Wiley; 1995]) approach. We show that a DOE allows for directly linking process parameters to relevant short channel performance metrics. By tuning the SiO2 thickness, HfSiO thickness, Hf concentration, nitridation parameters and by using response surface modeling (RSM), we report an improvement of 12%/17% in nMOS/pMOS drive current (I dsat 600/255uA/μm at I off =20pA/μm and V dd =1.1V) over our reference process. In parallel, we demonstrate that by selecting the right parameters, plasma nitridation can outperform thermal nitridation with NH3. We believe that this new approach will be useful for device engineers and can be easily applied. [Copyright &y& Elsevier]

Published
2007
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