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Your search keyword '"Fogarassy, E."' showing total 81 results
Start Over Author "Fogarassy, E." Publisher elsevier b.v.
81 results on '"Fogarassy, E."'

33. Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

Author

Dutto, C., Fogarassy, E., Mathiot, D., Muller, D., Kern, P., and Ballutaud, D.

Subjects
*SILICON carbide, *EXCIMER lasers
Abstract

As an alternative to classical thermal heating, laser annealing (LA) was recently demonstrated to be suitable for the electrical activation of ion-implanted dopants in SiC. In this work, we demonstrate the possibility to anneal the Al+ ion-implantation induced damage into 4H-SiC by solid phase laser processing using a XeCl excimer source of 200 ns-pulse duration. The electrical activation of the Al dopant was confirmed by I–V measurements performed directly on mesa pn junction diodes. [Copyright &y& Elsevier]

Published
2003
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34. Influence of the nitrogen content on the field emission properties of a-CNx films prepared by pulsed laser deposition

Author

Fogarassy, E., Szorenyi, T., Antoni, F., Stoquert, J.P., Pirio, G., Olivier, J., Legagneux, P., Boher, P., and Pons-Y-Moll, O.

Subjects
*PULSED laser deposition, *CARBON, *NITROGEN, *SURFACE chemistry
Abstract

Amorphous carbon nitride (a-CNx) films were grown on silicon substrates by ArF excimer laser ablation of a graphite target in the presence of nitrogen at various gas pressures. By working at elevated pressures (up to 100 Pa), high amounts of nitrogen can be incorporated into the films (N/C≤0.4) which lead to strong enhancement of their field emission properties. This behaviour was demonstrated to be mainly related to changes in the surface roughness of the samples, in connection with the development of graphite-like structures. [Copyright &y& Elsevier]

Published
2002
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35. Characterization of CNx films deposited by pulsed laser ablation using spectroscopic ellipsometry

Author

Boher, Pierre, Fogarassy, E., Szörényi, T., and Antoni, F.

Subjects
*ELLIPSOMETRY, *NITRIDES, *CARBON, *MICROSTRUCTURE
Abstract

Amorphous carbon nitride (CNx) films were grown on silicon substrates by ArF laser ablation (PLD) of a graphite target in presence of nitrogen at various gas pressures. These films have been measured by spectroscopic ellipsometry in the UV–vis and IR wavelength range. In the UV–vis range, the optical indices of the CNx films have been extracted accurately using a model including surface roughness. The optical indices of the films are modelized by a Forouhi dispersion law model and the thickness and roughness are adjusted at the same time. The optical gap is extracted from the extinction coefficient. In the IR spectral range, the conductivity of the films is extracted from the Drude tale model. These structural and optical results are compared to the physico-chemical results provided by Rutherford backscattering (RBS) and elastic recoil detection analysis (ERDA). [Copyright &y& Elsevier]

Published
2002
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