114 results on '"Fujiwara, Kozo"'
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2. Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon
3. In situ study of growth kinetics of {1 0 0} and {1 1 0} crystal/melt interfaces during unidirectional solidification of silicon
4. Difference in growth rates at {1 1 0} and {1 1 1} crystal/melt interfaces of silicon
5. Facet formation during the solidification of pure antimony
6. Twin boundary formation at a grain-boundary groove during the directional solidification of InSb
7. Multi-layer kagome lattices assembled with isotropic spherical colloids via heteroepitaxial growth
8. In situ observation of the solidification interface and grain boundary development of two silicon seeds with simultaneous measurement of temperature profile and undercooling
9. The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si
10. Effect of misorientation angle of grain boundary on the interaction with Σ3 boundary at crystal/melt interface of multicrystalline silicon
11. Crystallization and re-melting of Si1-xGex alloy semiconductor during rapid cooling
12. Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon
13. Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots
14. In-situ studies of multicrystalline silicon nucleation and growth on α- and β-Si3N4 coated substrates
15. Liquid immiscibility in a CTGS (Ca3TaGa3Si2O14) melt
16. Orientation-dependent impurity partitioning of colloidal crystals
17. Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth
18. The solid-solution region for the langasite-type Ca3TaGa3Si2O14 crystal as determined by a lever rule
19. Partitioning of ionic species during growth of impurity-doped lithium niobate by electric current injection
20. Growth of congruent-melting lithium tantalate crystal with stoichiometric structure by MgO doping
21. The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon
22. Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic casting method by controlling thermal conductivity under crucibles
23. Ga segregation during Czochralski-Si crystal growth with Ge codoping
24. Systematic studies of Si and Ge hemispherical concave wafers prepared by plastic deformation
25. Floating cast method to realize high-quality Si bulk multicrystals for solar cells
26. Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt
27. Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells
28. Intermixing of Ge and Si during exposure of GeH 4 on Si
29. Control of compound forming reaction at the interface between SnZn solder and Cu substrate
30. Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study
31. Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
32. Structural properties of directionally grown polycrystalline SiGe for solar cells
33. Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer
34. Growth and properties of SiGe multicrystals with microscopic compositional distribution and their applications for high-efficiency solar cells
35. Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(1 1 1) substrate
36. Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate
37. In-situ observations of melt growth behavior of polycrystalline silicon
38. In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy
39. Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(1 1 1) substrate
40. Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations
41. Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals
42. Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells
43. Evaluation of the diffusion coefficients in liquid GaGe binary alloys using a novel method based on Fick’s first law
44. In situ observations of crystal growth behavior of silicon melt
45. Simultaneous in situ measurement of solute and temperature distributions in the alloy solutions
46. New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law
47. Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals
48. In-situ monitoring system of the position and temperature at the crystal–solution interface
49. In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity
50. 17 - Grain Growth in the Melt
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