101 results on '"Gessner, T."'
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2. Reactivity to combined experimental stress- and alcohol cue-exposure predicts real-life alcohol use and craving in individuals with alcohol use disorder
3. A novel technique for MEMS packaging: Reactive bonding with integrated material systems
4. Micro arc welding for electrode gap reduction of high aspect ratio microstructures
5. Modeling of TDDB in advanced Cu interconnect systems under BTS conditions
6. Influence of the additives argon, O 2, C 4F 8, H 2, N 2 and CO on plasma conditions and process results during the etch of SiCOH in CF 4 plasma
7. Simulation of TaN x deposition by Reactive PVD
8. Compact meta-material transmission line balun based on meander lines structure and MEMS technology
9. Analysis of the impact of different additives during etch processes of dense and porous low- k with OES and QMS
10. Evaluation of Air Gap structures produced by wet etch of sacrificial dielectrics: Critical processes and reliability of Air Gap formation
11. Roughness improvement of the CoSi 2/Si-interface for an application as buried silicide
12. Evaluation of air gap structures produced by wet etch of sacrificial dielectrics: Extraction of keff for different technology nodes and film permittivity
13. Cu/barrier CMP on porous low- k based interconnect schemes
14. Different approaches to integrate patterned buried CoSi 2 layers in SOI substrates
15. A spectral vibration detection system based on tunable micromechanical resonators
16. Impact of reducing resist stripping processes at elevated temperature on ULK and HM materials
17. Different SiH 4 treatments of CVD TiN barrier layers
18. Fabrication and characterization of buried silicide layers on SOI substrates for BICMOS-applications
19. Scaling down thickness of ULK materials for 65 nm node and below and its effect on electrical performance
20. The current limits of the laser-acoustic test method to characterize low- k films
21. Novel low- k polycyanurates for integrated circuit (IC) metallization
22. Me 3SiC [tbnd]C–CMe [dbnd]CH 2 copper(I) β-diketonates: Synthesis, solid state structure, and low-temperature chemical vapour deposition
23. Ultra thin CVD TiN layers as diffusion barrier films on porous low-k materials
24. Improvement of mechanical integrity of ultra low k dielectric stack and CMP compatibility
25. SiO2 aerogel ultra low k dielectric patterning using different hard mask concepts and stripping processes
26. Influence of SiH 4 on the WN x-PECVD process
27. CVD TiN layers as diffusion barrier films on porous SiO 2 aerogel
28. In situ high temperature synchrotron-radiation diffraction studies of silicidation processes in nanoscale Ni layers
29. Thermal conductivity of ultra low- k dielectrics
30. Experimental results on the integration of copper and CVD ultra low k material
31. Effect of annealing on the microstructure of ultrathin tungsten nitride diffusion barriers for copper metallization
32. Development of PECVD WN x ultrathin film as barrier layer for copper metallization
33. Investigation of long throw PVD of titanium films from polycrystalline targets with texture
34. Comparison of techniques to characterise the density, porosity and elastic modulus of porous low- k SiO 2 xerogel films
35. Application of combined thermal and electrical simulation for optimization of deep submicron interconnection systems
36. Silicon oxide in SiSi bonded wafers
37. A single-crystal Si-resonator with on-chip readout amplifier in standard CMOS
38. Comparative study of Cu and CuAl 0.3 wt.% films
39. Optical properties and mechanical stress in SiO 2/Nb 2O 5 multilayers
40. Integration of Humidity Sensors into Fibre-reinforced Thermoplastic Composites.
41. Conference organization
42. Ohmic contacts to n-type polycrystalline SiC for high-temperature micromechanical applications
43. Film stress measurements for high temperature micromechanical and microelectronical applications based on SiC
44. Growth rate modeling for selective tungsten LPCVD
45. Evaluation of selective tungsten plugs on TiN, W and AlSi by analytical and electrical measurements
46. Electrical characterization of reactively sputtered TiN diffusion barrier layers for copper metallization
47. Structure and electrical properties of thin copper films deposited by MOCVD
48. Comparison of CoSi 2 interconnection lines on crystalline and noncrystalline silicon fabricated by writing focused ion beam implantation
49. Mo-silicided shallow junctions formed by using the ITM technique and the influence of Mo recoil atoms
50. Interface reactions between CVD and PVD tungsten and aluminium
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