34 results on '"Honda, Yoshio"'
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2. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
3. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing
4. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
5. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy
6. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
7. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
8. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode
9. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
10. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
11. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
12. Morphological study of InGaN on GaN substrate by supersaturation
13. How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphire
14. High-temperature thermal annealing of nonpolar (1 0 [formula omitted] 0) AlN layers sputtered on (1 0 [formula omitted] 0) sapphire
15. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
16. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer
17. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ([formula omitted]) GaN homoepitaxial layers
18. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer
19. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
20. Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
21. Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy
22. Growth and properties of semi-polar GaN on a patterned silicon substrate
23. Mg doping in (1 1¯ 0 1)GaN grown on a 7° off-axis (0 0 1)Si substrate by selective MOVPE
24. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (0 0 1) Si substrate by metalorganic vapor phase epitaxy
25. Serial changes of plasma plasminogen activator inhibitor activity in acute myocardial infarction: difference between thrombolytic therapy and direct coronary angioplasty
26. Growth of ( [formula omitted]) GaN on a 7-degree off-oriented (0 0 1)Si substrate by selective MOVPE
27. Growth of a GaN crystal free from cracks on a (1 1 1)Si substrate by selective MOVPE
28. Fabrication of GaN/AlGaN heterostructures on a (1 1 1)Si substrate by selective MOVPE
29. Corrigendum to “Morphological study of InGaN on GaN substrate by supersaturation” [J. Cryst. Growth 508 (2019) 58–65]
30. Novel activation process for Mg-implanted GaN.
31. Incorporation of carbon on a facet of GaN by MOVPE
32. Improved crystal quality of semipolar (10[formula omitted]3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer.
33. The photoemission characteristics of a NEA InGaN photocathode by simultaneously supplying Cs and O2.
34. Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE.
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