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• This review summarizes the patterning technologies of nanoporous structures. • This review focuses on the recent progress in the application of nanoporous structures for organic optoelectronic devices. • This review discusses the future directions and challenges in this area of organic electronics Organic electronic devices have received intensive interests from both academia and industry due to their potential for low-cost, large-area, and solution-processed alternative to conventional inorganic devices. The integration of nanoporous structures into organic electronics endows devices with unique capabilities for enhanced performance and promising capacity for various applications. Recent advances in patterning and applications of nanoporous structures have greatly promoted the progress of organic electronics. This review summaries the current research activities on the fabrication methodologies of nanoporous structures and their achievements in organic electronic devices. Finally, an outlook of future research directions and challenges in this area is presented. [ABSTRACT FROM AUTHOR]

[Display omitted] Tissue-equivalent pure organic semiconducting crystals (OSCs) have unique advantages in direct X-ray detectors (DXDs), especially for biological tissue fluoroscopy, but their low carrier mobility and inherent weak absorption restrict the limit-of-detection (LoD) and sensitivity of DXDs. High-mobility OSCs theoretically facilitate charge collection and performance leaps, however, they are rare and suffer from poor solubility due to high conjugation, leading to nearly impossible crystal growth from solution and subsequent device applications. Here we report an ingenious solution-processed crystal-growth and high-performance DXD using 2,6-diphenylanthracene (2,6-DPA), a high-mobility OSC we developed recently. In contrast to previous OSCs, high-mobility 2,6-DPA exhibits low dark current density and large photoconductive gain, resulting in record-breaking LoD of <85 nGy air s−1 and sensitivity of >103 μC Gy air −1 cm−2. Compared with semiconductors containing high- Z atoms (Z is atomic number), the accuracy of 2,6-DPA based DXDs is not affected by near-edge absorption effects. Moreover, the non-linear relationship between irradiation current and dose rate is confirmed as a high injection effect. High mobility and ingenious crystal growth strategy make 2,6-DPA an ideal active material for DXDs and also provide the possibility for more optoelectronic applications. [ABSTRACT FROM AUTHOR]