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Abstract: This study examined the multi-wire sawing of C-plane sapphire ingots using diamond wires. Feeding new wire during the reciprocating motion of the wire was found to vary the cutting force, wafer shape, and roughness as a result of the break-in effect. The break-in and wire wear seemed to cause a gradual change in the cutting performance along the ingot position. The cutting force results indicated that an inappropriate supply of wire yielded an unbalanced force between the front and back sides of the ingot, which was caused by a difference in the cutting depth along the ingot. The results showed that controlling the wire consumption resulted in an average flatness of 16μm, with a maximum value of 26μm. [Copyright &y& Elsevier]

Abstract: ECMD (electrochemical mechanical deposition) process consists of a traditional ECP (electrochemical plating) mechanism and a mechanical component. That is, this technique involves both electrochemical plating and mechanical sweeping of the material surface by the polishing pad. The mechanism of the ECMD process may be achieved through two mechanisms. The first mechanism may be the electrochemical plating on the surface where mechanical sweeping of polishing pad does not reach, and the second mechanism may be that the plating rate in the area that is mechanically swept may be reduced by the polishing pad. In this study, the effects of the mechanical component were investigated through various polishing pad types and hole ratios. In comparison to various polishing pad types using the manufactured the ECMD system, the plating rate and WIWNU (within wafer non-uniformity) using the experimental non-pore polishing pad were better than those of the experiments using other polishing pads. [Copyright &y& Elsevier]