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43 results on '"Liu, Po-Tsun"'

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26. Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory.

27. The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure.

28. TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology.

29. Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric.

30. Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack.

31. Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition.

32. Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment.

35. Investigation of deposition technique and thickness effect of HfO2 film in bilayer InWZnO-based conductive bridge random access memory.

36. A promising sputtering route for dense Cu2ZnSnS4 absorber films and their photovoltaic performance.

37. Surface potential mapping of p+/n-well junction by secondary electron potential contrast with in situ nano-probe biasing

38. Impact of annealing environment on performance of InWZnO conductive bridge random access memory.

39. Annealing effects on resistive switching of IGZO-based CBRAM devices.

40. Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors.

41. Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application

42. Electrical properties of metal–ferroelectric–insulator–semiconductor using sol–gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer

43. Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors

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