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A comprehensive overview of the advancements, challenges, and prospects of silicon carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology is presented. As the demand for high-performance and energy-efficient electronic devices continues to grow, SiC has emerged as a promising material due to its unique properties. The paper aims to provide a thorough understanding of the state-of-the-art developments in SiC CMOS technology. The paper delves into the key features of SiC and its compatibility with CMOS processing techniques. It highlights the challenges associated with SiC CMOS technology, such as substrate quality, interface states, and process integration. Examples of CMOS circuitry that have been successfully designed, fabricated, and tested are provided. [ABSTRACT FROM AUTHOR]

Abstract: Silicon carbide Schottky, merged PiN Schottky (MPS), and PiN diode technologies are modeled for on-state and reverse recovery conditions. The on-state operation of the PiN diode is modeled through four unique regimes of operation, including current densities resulting in emitter recombination, which results in a stored charge plateau during reverse recovery of SiC PiN diodes. An expression for the moving boundary redistribution capacitance is developed to accurately describe the reverse recovery process in PiN diodes. Furthermore, the extraction of stored charge and junction capacitance from transient reverse recovery measurements is also demonstrated for all diode technologies. The on-state operation of Schottky and merged PiN Schottky diodes is described and a method to model the surge current in MPS diodes is discussed. The performance of the model is demonstrated for a commercially available 600V, 4A Schottky diode and a 10kV, 7.5A PiN diode. Measurements demonstrating the extraction of model parameters and model validation results are included. [Copyright &y& Elsevier]