Polaczyński, Jakub, Krizman, Gauthier, Kazakov, Alexandr, Turowski, Bartłomiej, Ortiz, Joaquín Bermejo, Rudniewski, Rafał, Wojciechowski, Tomasz, Dłużewski, Piotr, Aleszkiewicz, Marta, Zaleszczyk, Wojciech, Kurowska, Bogusława, Muhammad, Zahir, Rosmus, Marcin, Olszowska, Natalia, de Vaulchier, Louis-Anne, Guldner, Yves, Wojtowicz, Tomasz, and Volobuev, Valentine V.
[Display omitted] α -Sn is an elemental topological material, whose topological phases can be tuned by strain and magnetic field. Such tunability offers a substantial potential for topological electronics. However, InSb substrates, commonly used to stabilize α -Sn allotrope, suffer from parallel conduction, restricting transport investigations and potential applications. Here, the successful MBE growth of high-quality α -Sn layers on insulating, hybrid (001) CdTe/GaAs substrates, with bulk electron mobility approaching 20000 cm2V−1s−1 is reported. The electronic properties of the samples are systematically investigated by independent complementary techniques, enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM) semimetal phases induced by the strains and magnetic field, respectively. Magneto-optical experiments, corroborated with band structure modelling, provide an exhaustive description of the bulk states in the DSM phase. The modelled electronic structure is directly observed in angle-resolved photoemission spectroscopy, which reveals linearly dispersing bands near the Fermi level. The first detailed study of negative longitudinal magnetoresistance relates this effect to the chiral anomaly and, consequently, to the presence of WSM. Observation of the π Berry phase in Shubnikov-de Haas oscillations agrees with the topologically non-trivial nature of the investigated samples. Our findings establish α -Sn as an attractive topological material for exploring relativistic physics and future applications. [ABSTRACT FROM AUTHOR]