37 results on '"Saint-Girons, G"'
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2. Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes
3. Structural studies of epitaxial BaTiO3 thin film on silicon
4. Sol–gel deposition of Pb(Zr,Ti)O3 on GaAs/InGaAs quantum well heterostructure via SrTiO3 templates: Stability of the semiconductor during oxide growth
5. Texture of Ge on SrTiO3 (001) substrates: Evidence for in-plane axiotaxy
6. The role of titanium at the SrTiO3/GaAs epitaxial interface
7. X-ray photoelectron spectroscopy and diffraction investigation of a metal–oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)
8. Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer
9. Growth of Ge islands on SrTiO3 (001) 2 × 1 reconstructed surface: Epitaxial relationship and effect of the temperature
10. Chemistry and structure of BaTiO3 ultra-thin films grown by different O2 plasma power
11. Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate
12. Molecular beam epitaxy growth of BaTiO3 thin films and crucial impact of oxygen content conditions on the electrical characteristics
13. Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
14. Epitaxy of BaTiO 3 thin film on Si(0 0 1) using a SrTiO 3 buffer layer for non-volatile memory application
15. Direct epitaxial growth of InP based heterostructures on SrTiO 3/Si(0 0 1) crystalline templates
16. Direct epitaxial growth of SrTiO 3 on Si (001): Interface, crystallization and IR evidence of phase transition
17. Crystallographic orientation transition of InP islands on SrTiO 3 substrates with the growth temperature
18. Molecular beam deposition of LaAlO 3 on silicon for sub-22 nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface
19. Influence of the surface reconstruction on the growth of InP on SrTiO 3(0 0 1)
20. Epitaxial growth of high- κ oxides on silicon
21. De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer
22. Development of robust interfaces based on crystalline γ-Al 2O 3(001) for subsequent deposition of amorphous high- κ oxides
23. Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(0 0 1) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
24. Strain relaxation and critical thickness for epitaxial LaAlO 3 thin films grown on SrTiO 3(0 0 1) substrates by molecular beam epitaxy
25. Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
26. Stress-driven self-ordering of III–V nanostructures
27. Buried dislocation networks for the controlled growth of III–V semiconductor nanostructures
28. Direct growth of GaAs-based structures on exactly (0 0 1)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection
29. Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots
30. Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands
31. Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islands
32. Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm
33. Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots
34. (InGa)(NAs)/GaAs structures emitting in 1–1.6 μm wavelength range
35. Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55 μm emission
36. 1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response
37. Epitaxial growth of LaAlO3 on Si(001) using interface engineering
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