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This article is an attempt to investigate the impact of mergers and acquisitions (M&As) on corporate performance of Indian IT sector for the period 2007–2015. The focus of this article is on Indian IT sector as it has been the growth engine of the economy and emerging as its most internationalised sector. This article has engaged, fixed and random effect panel data models to measure the impact of M&As on various financial variables with comparative analysis of domestic and cross border deals. The findings reveal that the M&As have significant positive impact on Return on Net worth and Revenue of IT companies in India when both domestic and cross-border regions were considered together. Whereas, Earnings Before Interest, Taxes, Depreciation and Amortisation experienced significant decline. Return on Capital Employed did not experience any significant impact due to M&As. When the impact of M&As was analysed separately for domestic and cross-border deals, it was obtained that the impacts are in different directions for domestic and cross-border deals in two out of four variables. The significant inference is that domestic deals per se are much better than the cross border deals. [ABSTRACT FROM AUTHOR]

This paper attempts to analyse the drivers of the emerging Foreign Direct Investment (FDI) relationship between India and Africa. Using a fixed effect negative binomial model, it examines the determinants of FDI from India to 23 African countries from 2008 to 2016. The study finds that Indian FDI to Africa is a unique combination of both private sector and state driven investment. It is driven by the search for markets, and is pulled despite an adverse business environment. Indian FDI has contributed to several African countries by development of their manufacturing sector and contribution to employment, and has the potential to solve regional problems of poverty and inequality. The paper thus makes a pioneering contribution as an empirical study on OFDI from India to Africa and also to the literature on south – south FDI. [ABSTRACT FROM AUTHOR]

In this paper, a systematic investigation of electronic structure and optical properties of quaternary chalcopyrite semiconductors Cu 2 ZnGeS 4 and Cu 2 ZnGeSe 4 in stannite and kesterite structures using the full-potential linearized augmented plane wave method are presented. The electronic structures and related properties of the crystals are studied with density functional theory using modified Becke – Johnson (mBJ) potential. The computed bands and density of states are found to be in good agreement with the available experimental and theoretical results. Important optical properties such as, dielectric functions, absorption spectra, refractivity and reflectivity of the crystals have also been investigated using the mBJ exchange potential. The imaginary parts of dielectric tensor are analyzed in terms of interband transitions. The band gap energies of stannite CuZnGeS 4 (CuZnGeSe 4) and kesterite CuZnGeS 4 (CuZnGeSe 4) compounds are obtained as 1.23 (0.74) eV and 1.52 (1.08) eV, respectively. Present band gap energies and optical parameters show feasibility of the studied materials in photovoltaic and other optoelectronic devices. [ABSTRACT FROM AUTHOR]

The present study examines the drivers of cross border mergers and acquisitions (CBMA) from the Indian information technology sector for the period 2000–2011. It uses a multi-theoretic analysis rooted in the resource-based view and network theory to examine 354 deals from 74 firms. Empirical estimation using a Poisson panel regression model found that a firm’s financial resources, capability, prior international experience and parental network have a significant positive influence on CBMA activity. A unique finding of the paper is the strong presence of the Born Global engaging in CBMA as their mode of foreign market entry. This paper thus adds to the literature on internationalisation of emerging market multinational enterprises and specifically about technology-based Indian firms. [ABSTRACT FROM PUBLISHER]

In this work, electronic structure and optical properties investigations for defect-chalcopyrite semiconductors ZnGa 2 Te 4 and CdGa 2 Te 4 are presented using full potential linearized augmented plane wave method. Energy bands and density of states (DOS) computations are performed using different flavors of exchange and correlations. The calculations are performed using Wu-Cohen generalized gradient approximation (WC-GGA), Perdew et al. (PBE-sol) and the most accurate modified Becke and Johnson (mBJ) potentials. Our investigations show that energy bands and DOS computed using mBJ potential are in better agreement with the available experimental data. Optical properties such as, dielectric tensor components, absorption spectra, reflectivity, refractivity, dielectric loss, are investigated using mBJ potential. Imaginary peaks of di-electric tensor ε 2 ( ω ) , are interpreted by means of inter-band transitions from valence to conduction band. High intensity absorption curves from 3 to 5 eV, energy band gap depicted for ZnGa 2 Te 4 (1.61 eV) and CdGa 2 Te 4 (1.78 eV) materials indicates their applicability for solar photovoltaic and other optoelectronic applications. [ABSTRACT FROM AUTHOR]

In this paper, we have investigated the impact of mono and co-doping of Sr/Sn on the electronic, optical and structural properties of MgGeN 2. The effects of Sr/Sn doping at Mg/Ge site are investigated to explore the potential of pure and doped compounds in optoelectronic applications. For the investigations of electronic and optical properties such as, energy bands, density of states, dielectric tensors, absorption coefficient, reflectivity and refractivity spectra, of MgGeN 2 , Mg 1-x Sr x GeN 2 , MgGe 1-x Sn x N 2 and Mg 1-x Sr x Ge 1-x Sn x N 2 (x = 0.0625, 0.125) compounds, we have used the Perdew-Burke-Ernzerhof generalized gradient approximation potential and further ameliorated by Tran-Blaha modified Becke Johnson exchange co-relation potential. The stability of the doped compounds is discussed in terms of formation energy and binding energy for the mono and co-doped compounds. It is observed that the doping of Sr/Sn at Mg/Ge reduces the band gap of MgGeN 2. The energy gap of MgGeN 2 reduces from 2.90 eV to 2.25 eV with 12.5% co-doping of Sr and Sn. The potential of pure and doped compounds for optoelectronic applications are discussed in terms of their optical properties. • Investigated Opto-electronic properties for pure, mono and co-doped MgGeN 2. • Demonstrated the effect of doping on optoelectronic properties of MgGeN 2. • Discussed the dielectric tensor in term of inter band transitions. • Possibility of utilization in photovoltaic and optoelectronic is discussed. [ABSTRACT FROM AUTHOR]

Abstract: We report energy bands, density of states and optical properties of CuGaS2 and CuInS2 chalcopyrites. The electronic structure has been computed using linear combination of atomic orbitals (LCAO) scheme within density functional theory (DFT) and full-potential linearised augmented plane wave method. The energy bands, density of states, components of dielectric tensors and absorption coefficients are compared with the available data. It is seen that the present LCAO–DFT calculations reproduce the electronic properties of both the chalcopyrites in a reasonable way. The optical properties show more absorption of solar radiations for CuGaS2 chalcopyrite, depicting its more usefulness in the solar cells. [Copyright &y& Elsevier]

Various constituent ratios with 50:30, 40:40 and 30:50 wt % of U-type barium hexaferrite (Ba 4 Co 2 Fe 36 O 60) and Gamma iron oxide (γ Fe 2 O 3) have been used to designing the radar absorbing composites within epoxy resin system. In the current work, studies are done on electromagnetic and absorbing properties of γ Fe 2 O 3 powder dispersed Ba 4 Co 2 Fe 36 O 60 -epoxy composites. X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM) and Vibrating Sample Magnetometer (VSM) tools have been used for structural, surface morphology and magnetic properties respectively of the synthesized powder and fabricated composites. The electromagnetic properties (ε′, ε", μ' & μ") of fabricated composites were retrieved from measured reflection (S 11 & S 22) and transmission (S 12 & S 21) parameters in 2–18 GHz frequency range. Experimental finding show that the fabricated composite having 50 wt % of γ Fe 2 O 3 of designed Ba 4 Co 2 Fe 36 O 60 /γ Fe 2 O 3 -epoxy composites possesses maximum absorption of 98.8% (RL min of −19.89 dB) at 13.2 GHz for sample thickness of 3.2 mm. The fabricated microwave absorbers confirm the effective absorption performance which has potential for strategic applications and stealth technology. Image 1 • Synthesized U-type BHF (Ba 4 Co 2 Fe 36 O 60) and Gamma iron oxide (γ Fe 2 O 3) powder were used as microwave absorbing materials (50:30, 40:40 & 30:50 in wt. %) in epoxy matrix. • Estimating the particles size and crystalline size values of synthesized powder and Ba 4 Co 2 Fe 36 O 60 /γ Fe 2 O 3 -epoxy polymeric composites. • Improved EM properties are computed from measured scattering parameters of all composites. • Microwave absorbing properties were boosted in terms of reflection loss (RL) for the frequency range of 2–18 GHz. • Maximum absorption (›› 90%) for ≤ −10 dB was achieved for the designed composites. [ABSTRACT FROM AUTHOR]

• Structure and operational principle of DSSC are provided along with their equations. • Advancement of various TCO substrate and sealing materials in DSSCs were summarized. • Progress in photoanode, different types of dye and electrolyte used in DSSC were elaborated. • Improvement on the CE in DSSCs with special focus on Pt-TCO free CE were highlighted. The Dye-sensitized solar cell (DSSC) is globally investigated technology due to their attractive characteristics such as low-cost, simple fabrication, flexible, transparent, variety of colour, sensitive to diffuse light and eco-friendly photovoltaic (PV) technology and have capabilities for commercial application. These characteristics are particularly well suited for integrated PV in buildings and automotive, as well as indoor or portable light applications. DSSC is a photo-electrochemical device comprises of a photo-anode consists of wide band metal oxide semiconductor (MOS) layer sensitized with dye, counter electrode (CE) coated with platinum or other material and an electrolyte which is sandwiched between the photo-anode and counter electrode. Therefore, to enhance the DSSC's performance, a comprehensive study to understand the fundamental and recent research trends of MOS, dye, electrolyte, sealing material and CE employed in DSSC is necessary. This paper have presented the various design strategies, material employed and literature in the field of MOS, dye, electrolyte, sealing material, and CE for DSSC. We illustrate the architecture, working mechanism, and brief explanation of DSSC growth as well as necessary requirements for the DSSC components to provide a direction for the construction of highly efficient DSSC. This paper also consolidated the introduction, benefits and classification of PV technologies. We also give brief description of market growth of DSSC technology and future perspective for efficient DSSC. [ABSTRACT FROM AUTHOR]

[Display omitted] • Detailed steps for TiO 2 paste preparation for SP and DB techniques are provided. • SP and DB techniques for photoanode deposition have been elaborated. • The efficiency of SP based DSSCs (7.25%) are better than DB based DSSC (6.13%). • Determination of R S , 'n' and I S for all fabricated DSSCs. • Comparison of AVT for SP (30.78%) and DB (33.38%) based DSSC are provided. The stability, efficiency, and cost etc. of dye sensitized solar cell (DSSC) does not depend on materials only. As these properties are linked with the method of layer preparation and deposition, therefore fabrication methods are crucial for enhancing the performance of DSSC. In this paper, we demonstrate the process of TiO 2 layer deposition by screen printing (SP) and doctor blade (DB) techniques, and the complete fabrication of DSSC. In addition, the preparation method of TiO 2 paste which is compatible for SP and DB techniques is also described. PV performance of TiO 2 layer printed by SP based DSSC is 6.72% which is better than 4.86% achieved by DB based DSSC. It is worth mentioning that power conversion efficiency (PCE) of cells was improved when a simple white paper is placed on the back surface of DSSCs during I-V characterization. Due to white paper, the incident light will be scattered or reflected again in the active area. This enhancement is remarkable, and it improves the PCE from 6.72% to 7.25% for SP and from 4.86% to 6.13% for DB technique based DSSC. We also calculated the series resistance (R S), saturation current (I S) and ideality factor ('n') for SP and DB technique based DSSC to understand the internal phenomena (charge transfer and recombination) and how these values influence the PV parameters. The transparency and colour effect of the SP and DB technique based DSSCs were explained by average visible transmittance (AVT), colour rendering index (CRI), and correlated colour temperature (CCT). [ABSTRACT FROM AUTHOR]

A series of novel, low-cost materials SrSnX 2 (X=N, P, Sb, As, Bi) is explored through density functional theory in terms of structural, electronic, and optical properties to underline the usage of these compounds as photo-absorber materials. Within the modified Becke-Johnson exchange-correlation potential, SrSnN 2 shows a direct band gap of 1.94 eV while other materials in the series show a natural intermediate band which supports the two-step optical transition and hence increases the absorption in the visible energy region. Calculated values of the effective mass of electrons, effective densities of conduction, and valence states are found comparable with typical photovoltaic materials (Si and CdTe). We have obtained a high open-circuit voltage of 1.75 V, fill-factor of 0.92 with maximum efficiency of about 23% under one sun condition with a thickness of 10 nm which suggests that SrSnBi 2 stands as a potential candidate for photovoltaics. The calculated band-edges concerning normalizing hydrogen electrode appeal their use as efficient photo-electrocatalyst for water splitting. Overall, we suggest that the natural intermediate band gap-materials are promising candidate for low-cost and efficient photovoltaic and photo-electrocatalytic applications. [ABSTRACT FROM AUTHOR]

Background: The current revascularization treatment recommendation is different according to lesion location and a higher recommendation is given to surgery for proximal LAD (pLAD) lesions over PCI. This is based on previous studies and expert opinion. We aimed to investigate whether indeed there is a difference in outcome with respect to LAD lesion location while using a drug eluting stent (DES). Methods: The NOBORI-2 trial, enrolled 3067 consecutive patients in 125 centers who were treated with DES for single and multivessel disease. We compared 834 [27.2%] patients who underwent PCI of the pLAD as part of their revascularization, to 2203 [71.8%] patients in which stenting to other lesion(s) but not the pLAD was performed. Results: The pLAD group had lower incidence of hypertension, peripheral vascular disease, prior PCI and CABG, but had more lesions treated [1.55±0.8 vs. 1.35±0.6], more stents implanted [1.98±1.2 vs. 1.66±1.0] and longer overall stent length [31.8±20.2 vs. 28.2±17.8mm]. There was no difference in the occurrence of the primary endpoint [cardiac death, myocardial infarction and target lesion revascularization] at 1 or 2years of follow up between the pLAD and non pLAD [6.0% vs. 4.6%, p=0.14 and 7.7% vs. 6.6%; p=0.22, respectively]. The relief from anginal symptoms was similar. Multivariate analysis showed that pLAD location was not a variable that predicted MACE or TLF. Stent thrombosis rate was similar. Conclusion: When considering PCI with DES, there is no difference in outcome between patients with and without proximal LAD lesions. [ABSTRACT FROM AUTHOR]

Researchers have shown ample concern in the investigation of new potential materials which resembles with required band gap range for photovoltaic applications and hence demonstrates higher conversion rates when exposed to sunlight. Present study is focused towards identifying the effect of M = (Ge, Sn) doping on structural, electronic and optical properties of promising photovoltaic ZnSiP 2 material. All Investigations have been performed using well-established and most precise full potential linearized augmented plane wave method. Detailed realization of pure and doped ZnSi (1 – x) M x P 2 (M = Ge and Sn; 0 ≤ x ≤ 1) have been implemented using highly immaculate Tran- Blaha modified Becke-Johnson (TB-mBJ) exchange and correlation potential. Investigated parameters includes crystal structure, energy bands, density of states, dielectric tensor, absorption, reflectivity and refraction spectra which helps to elaborate complete behavior of these compounds. Energy band gap, attained from TB-mBJ, for pure ZnSiP 2 (1.98 eV) matches precisely with available theoretical and experimental calculations and hence validates accuracy of present computation. This is observed that increase in doping percentage (x = 0.125 to 0.75) of Sn at Si site, results with systematic reduction in band gap (1.96 to 1.81 eV) value which increases possible utilization of this material in photovoltaic applications. On the other hand, reasonable reduction is not observed with Ge doping of similar scale. [ABSTRACT FROM AUTHOR]